Patents by Inventor Nobihiro Tokoro

Nobihiro Tokoro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation
    Patent number: 7462844
    Abstract: The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: December 9, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Shengwu Chang, Isao Tsunoda, Nobihiro Tokoro, Dennis Rodier, Joseph C. Olson, Donna Smatlak, Damian Brennan, William Bintz
  • Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation
    Publication number: 20070085037
    Abstract: The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
    Type: Application
    Filed: September 30, 2005
    Publication date: April 19, 2007
    Inventors: Shengwu Chang, Isao Tsunoda, Nobihiro Tokoro, Dennis Rodier, Joseph Olson, Donna Smatlak, Damian Brennan, William Bintz