Abstract: An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A variable period variable composition superlattice strain relief region is provided over the template layer such that the composition of the strain relief region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the strain relief region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.

Abstract: An improved method of analyzing target analytes in a sample is described. The method is based on creating an approximately homogeneous distribution of light in an anti-resonant guided optical waveguide to improve light-target interaction in a target-containing medium. The light-target interaction can be monitored by many different means to determine characteristics of the target analyte.

Abstract: A method and structure for integrating many optical devices on a single wafer is described. The method fabricates passive interconnect devices using hydrogenation techniques. Lateral optical confinement is achieved by hydrogenating regions laterally adjacent to the waveguide core. Vertical optical confinement is adjusted by careful control of the hydrogen content of the waveguide core itself.

Abstract: A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.

Abstract: A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.

Abstract: A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.

Abstract: A fluidic structure includes a channel and along the channel is a series of sensing components to obtain information about objects traveling within the channel, such as droplets or other objects carried by fluid. At least one sensing component includes a set of cells of a photosensor array. The set of cells photosense a range of photon energies that emanate from objects, and include a subset of cells that photosense within subranges. A processor can receive information about objects from the sensing components and use it to obtain spectral information. The processor can perform an initial analysis using information from one set of sensing components and, based on the results, control a fluidic device in the channel, such as a gate, to retain objects, such as for concentration and more detailed analysis by other sensing components, or to purge objects from the channel.

Abstract: Photons emanating from a channel in a fluidic structure or from moving objects are sensed using a photosensor array in an integrated circuit. The array includes subrange cells that photosense within respective subranges of a photon energy range. For example, the subrange cells can receive photons in their respective subranges from a transmission structure that has laterally varying properties. The photons can be emitted in response to excitation or can be scattered in response to illumination.

Abstract: An integrated circuit includes a photosensor array with subrange cells that photosense within respective subranges of an energy range. An optical signal and the array move relative to each other, and, for segments of their relative movement, sets of subrange cells photosense within subranges that are different. For example, a scanning device can cause relative scanning movement. The optical signal can be produced by illuminating a two-dimensional object. The photosensed quantities for a part of the optical signal can be used to produce spectral information for the part.

Abstract: A semiconductor device including a metal oxide layer, a channel area of the metal oxide layer, a preservation layer formed on the channel area of the metal oxide layer, and at least two channel contacts coupled to the channel area of the metal oxide layer, and a method of forming the same.

Abstract: Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.

Abstract: Disclosed is a compact, non-contacting device for collecting samples, and particularly minute quantities of bio-agents or particulates, from a surface. The device vibrates a region of a target surface containing the sample and collects the sample on an electrically charged pin array. The sample can be later released to a detector or other instrumentation for subsequent analysis.

Abstract: Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.

Abstract: Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.

Abstract: Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a bottom contact to the nanorods. A top metal contact may be applied to a plurality of nanorods of the nanorod array. The contacts may allow I/V (current/voltage) characteristics of the nanorods to be measured.

Abstract: Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures.

Abstract: A display apparatus includes a luminescent screen having pixels formed from blue, green and red luminescent material that are selectively activated by a laser beam to generate a full color image. The display utilizes a closed loop laser scanning/modulating arrangement in which a Position Sensitive Device (PSD) located next to the screen is used to determine the location of the impinging beam, and to transmit timing/location data to the laser addressing system. The laser addressing system uses the timing/location data to adjust and/or modulate the laser beam, thereby generating high-energy beam pulses that activate the selected pixels. The PSD includes vertical strips located along the side edges of the screen, or a sheet that is located behind the screen and accessed, for example, by way of slits or apertures formed in the screen material. The PSD sheet is coupled to an optional power source to form a photon-multiplication device.

Abstract: A display apparatus includes an emissive screen having luminescent pixels that are addressed solely by a laser addressing system. Each pixel includes a luminescent region located next to a photocathode. When struck by the laser beam, free electrons are created that are accelerated by an applied high voltage field from the photocathode to the luminescent region, thereby causing the luminescent region to emit visible light with a brightness (energy) that is substantially higher than the energy of the addressing beam. Apertures are optionally provided in hexagonal luminescent regions to relax beam-scanning requirements. Optional millichannel plates (crude versions of 2nd generation night vision system Microchannel plates) are provided to enhance photon multiplication. A position sensitive device is implemented using the photocathode or photoanode (luminescent) material to facilitate the scanning and modulating process.

Abstract: A flow cell is disclosed for collecting and concentrating a sample dispersed in a flowing medium. The collected sample can be selectively manipulated within the cell by the use of one or more traveling wave grids. The cells are particularly useful as bio-enrichment devices and can be utilized upstream of conventional analytical or detection instruments.

Abstract: A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.