Patents by Inventor Noble NARKU-TETTEH

Noble NARKU-TETTEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Technologies for controlling current through memory cells
    Patent number: 12154623
    Abstract: Techniques for controlling current through memory cells is disclosed. In the illustrative embodiment, a fine-grained current source and a coarse-grained current source can both be activated to perform an operation on a phase-change memory cell. The coarse-grained current source is briefly activated to charge up the capacitance of an electrical path through the memory cell and then turned off. The fine-grained current source applies a current pulse to perform the operation on the memory cell, such as a reset operation. By charging up the electrical path quickly with the coarse-grained current source, the fine-grained current source can quickly perform the operation on the memory cell, reducing the thermal disturbance caused by the operation on nearby memory cells.
    Type: Grant
    Filed: February 24, 2021
    Date of Patent: November 26, 2024
    Assignee: Intel Corporation
    Inventors: Noble Narku-Tetteh, Yasir Mohsin Husain, Ripudaman Singh, Nicolas L. Irizarry
  • TECHNOLOGIES FOR CONTROLLING CURRENT THROUGH MEMORY CELLS
    Publication number: 20220270680
    Abstract: Techniques for controlling current through memory cells is disclosed. In the illustrative embodiment, a fine-grained current source and a coarse-grained current source can both be activated to perform an operation on a phase-change memory cell. The coarse-grained current source is briefly activated to charge up the capacitance of an electrical path through the memory cell and then turned off. The fine-grained current source applies a current pulse to perform the operation on the memory cell, such as a reset operation. By charging up the electrical path quickly with the coarse-grained current source, the fine-grained current source can quickly perform the operation on the memory cell, reducing the thermal disturbance caused by the operation on nearby memory cells.
    Type: Application
    Filed: February 24, 2021
    Publication date: August 25, 2022
    Applicant: Intel Corporation
    Inventors: Noble Narku-Tetteh, Yasir Mohsin Husain, Ripudaman Singh, Nicolas L. Irizarry
  • Common mode gain trimming for amplifier
    Patent number: 10027295
    Abstract: An electrical device (e.g., an integrated circuit) includes an amplifier, a configurable common mode gain trim circuit, and a memory. The configurable common mode gain trim circuit is coupled to the amplifier. The memory is configured to include trim data that is usable during an initialization process for the electrical device to configure the impedance matching circuit.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: July 17, 2018
    Assignee: Texas Instruments Incorporated
    Inventors: Wenxiao Tan, Mayank Garg, Noble Narku-Tetteh
  • COMMON MODE GAIN TRIMMING FOR AMPLIFIER
    Publication number: 20170288622
    Abstract: An electrical device (e.g., an integrated circuit) includes an amplifier, a configurable common mode gain trim circuit, and a memory. The configurable common mode gain trim circuit is coupled to the amplifier. The memory is configured to include trim data that is usable during an initialization process for the electrical device to configure the impedance matching circuit.
    Type: Application
    Filed: April 29, 2016
    Publication date: October 5, 2017
    Inventors: Wenxiao TAN, Mayank GARG, Noble NARKU-TETTEH