Abstract: A semiconductor substrate in includes a buffer layer and a first crystalline layer. A bandgap of the first crystalline layer is smaller than a bandgap of a second layer. When a semiconductor wafer is formed as a transistor wafer, a channel of a transistor is formed at or near an interface between the first crystalline layer and the second layer. With a first electrode and a second electrode provided and a third electrode provided, when space charge redistribution, for emitting electrons and holes from a bandgap of a crystal positioned in the spatial region, is achieved by applying negative voltage to the third electrode or by applying positive voltage to the second electrode with the first electrode serving as a reference, an electron emission speed in the space charge redistribution is higher than a hole emission speed.

Abstract: A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm?3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

Abstract: Provided is a novel light adjustment program that can make a human feel at ease. Provided is the light adjustment program that includes the steps of obtaining basic data having 1/f fluctuation characteristics; generating first smoothed data and second smoothed data by performing moving average processing with different periods on the basic data having 1/f fluctuation characteristics; generating light adjustment data by subjecting the first smoothed data and the second smoothed data to arithmetic processing; and changing luminance of a light-emitting device in time series in accordance with the light adjustment data.

Abstract: A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm?3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

Abstract: A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

Abstract: A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

Abstract: A nitride-based semiconductor light-emitting element includes: a substrate that is an example of a n-type nitride-based semiconductor including a group IV n-type impurity; and an n-side electrode in contact with the substrate. The substrate includes: a surface layer region in contact with the n-side electrode and including a halogen element; and an internal region located across the surface layer region from the n-side electrode. A peak concentration of the group IV n-type impurity in the surface layer region is at least 1.0×1021 cm?3. A peak concentration of the halogen element in the surface layer region is at least 10% of the peak concentration of the group IV n-type impurity in the surface layer region. A concentration of the group IV n-type impurity in the internal region is lower than a concentration of the group IV n-type impurity in the surface layer region.

Abstract: An image processing apparatus according to an example embodiment includes a storage unit configured to store a relative position and an angle of each of a plurality of radiation detection apparatuses attached to a platform in first imaging and a composition unit configured to, on the basis of the relative position and angle of each of the radiation detection apparatuses which are stored in the storage unit, combine a plurality of images obtained by a plurality of radiation detection apparatuses in second imaging subsequent to the first imaging.

Abstract: An image processing apparatus includes an acquiring unit and an image processing unit. The acquiring unit acquires a radiographic image acquired by irradiating a radiation on an object and a scattered-ray component contained in the radiographic image, wherein the scattered-ray component originates from a scattered ray which is a radiation scattered in the object. The image processing unit performs an image process on the radiographic image in accordance with an instruction, wherein the image processing unit performs an image process based on a radiographic image acquired by the acquiring unit and a scattered-ray component acquired by the acquiring unit in a case where an instruction to perform the image process is received again.

Abstract: An image processing apparatus according to an example embodiment includes a storage unit configured to store a relative position and an angle of each of a plurality of radiation detection apparatuses attached to a platform in first imaging and a composition unit configured to, on the basis of the relative position and angle of each of the radiation detection apparatuses which are stored in the storage unit, combine a plurality of images obtained by a plurality of radiation detection apparatuses in second imaging subsequent to the first imaging.

Abstract: An imaging control apparatus for an X-ray imaging apparatus which performs X-ray imaging in accordance with a plurality of pieces of imaging information displayed in an information display area of a display unit includes a display control unit which controls the display position of prepared imaging information in the completed state of preparation for X-ray imaging and the display position of unprepared imaging information in the uncompleted state of preparation for X-ray imaging in accordance with a reference position set in the information display area.

Abstract: An image processing apparatus includes an acquiring unit and an image processing unit. The acquiring unit acquires a radiographic image acquired by irradiating a radiation on an object and a scattered-ray component contained in the radiographic image, wherein the scattered-ray component originates from a scattered ray which is a radiation scattered in the object. The image processing unit performs an image process on the radiographic image in accordance with an instruction, wherein the image processing unit performs an image process based on a radiographic image acquired by the acquiring unit and a scattered-ray component acquired by the acquiring unit in a case where an instruction to perform the image process is received again.

Abstract: An image processing apparatus includes an acquiring unit and an image processing unit. The acquiring unit acquires a radiographic image acquired by irradiating a radiation on an object and a scattered-ray component contained in the radiographic image, wherein the scattered-ray component originates from a scattered ray which is a radiation scattered in the object. The image processing unit performs an image process on the radiographic image in accordance with an instruction, wherein the image processing unit performs an image process based on a radiographic image acquired by the acquiring unit and a scattered-ray component acquired by the acquiring unit in a case where an instruction to perform the image process is received again.

Abstract: To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to ESD and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first FET for detecting voltage of the device under test, and a protection circuit for protecting the first FET from static electricity. The protection circuit includes a second FET having an oxide semiconductor film as a channel formation region.

Abstract: An image processing apparatus includes an acquiring unit and an image processing unit. The acquiring unit acquires a radiographic image acquired by irradiating a radiation on an object and a scattered-ray component contained in the radiographic image, wherein the scattered-ray component originates from a scattered ray which is a radiation scattered in the object. The image processing unit performs an image process on the radiographic image in accordance with an instruction, wherein the image processing unit performs an image process based on a radiographic image acquired by the acquiring unit and a scattered-ray component acquired by the acquiring unit in a case where an instruction to perform the image process is received again.

Abstract: An image processing device acquires a radiography image and detects the use or non-use of a grid for capturing the radiography image. If the use of the grid is detected, the image processing device performs a grid pattern reduction process. If the non-use of the grid is detected, the image processing device performs a scattered-ray-component reduction process.

Abstract: An imaging control apparatus for an X-ray imaging apparatus which performs X-ray imaging in accordance with a plurality of pieces of imaging information displayed in an information display area of a display unit includes a display control unit which controls the display position of prepared imaging information in the completed state of preparation for X-ray imaging and the display position of unprepared imaging information in the uncompleted state of preparation for X-ray imaging in accordance with a reference position set in the information display area.

Abstract: The conferencing system is composed of computers, a moderator's computer, and a projector connected on a network. The moderator's computer receives image data from the computers, and generates synthesized image data therefrom, which is transmitted to the projector for display of the synthesized image. The moderator's computer has the capability to switch the image being projected by the projector from the synthesized image to an image handled by one of the computers or by the moderator's computer. With such an arrangement, utilizing existing hardware resources it will be possible to display in a single split-screen display the images handled by the terminals connected on the network. Additionally, it will be possible to switch smoothly between on-screen displays, and to reduce the burden on the on-screen display operator in a networked conferencing system.

Abstract: The conferencing system is composed of computers, a moderator's computer, and a projector connected on a network. The moderator's computer receives image data from the computers, and generates synthesized image data therefrom, which is transmitted to the projector for display of the synthesized image. The moderator's computer has the capability to switch the image being projected by the projector from the synthesized image to an image handled by one of the computers or by the moderator's computer. With such an arrangement, utilizing existing hardware resources it will be possible to display in a single split-screen display the images handled by the terminals connected on the network. Additionally, it will be possible to switch smoothly between on-screen displays, and to reduce the burden on the on-screen display operator in a networked conferencing system.

Abstract: The object is to develop an antiprotozoal remedy having a novel mechanism of action. Provided is a compound represented by a chemical formula (1), a prodrug or a pharmaceutically acceptable salt thereof, wherein within the formula (1), R1 represents R10— of formula (4) or R20— of formula (5); R2 represents CHO—, etc.; R3 represents a hydrogen atom, CH3—C(?O)—, etc.; R4 represents a hydrogen atom, CH3—C(?O)—, etc.; each of R11 and R12 independently represents a hydrogen atom, a methyl group, etc.; R13 represents —CH2—, —CH(—OH)— or —C(?O)—; each of R21 and R22 independently represents a hydrogen atom, a methyl group, etc.; R23 represents —CH2—, —CH(—OH)— or —C(?0)—; and R24 represents a hydrogen atom, a hydroxyl group, a methyl group, etc.