Abstract: An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

Abstract: An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer [[(33) including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

Abstract: A light-emitting element includes a hole transport layer between a light-emitting layer and an anode, the hole transport layer containing either a metal oxide of (NiO)1-x(LaNiO3)x (composition formula 1) or (CuyO)1-x(LaNiO3)x (composition formula 2), where 0<x?1 and 1?y?2.

Abstract: A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

Abstract: A light-emitting element includes: an anode; a hole transport layer, a light-emitting layer containing quantum dots; an electron transport layer, and a cathode, arranged in this order, the light-emitting element further including a charge blocking layer either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor, at least one selected from Al, Mg, and Si; and O.

Abstract: A light-emitting element is provided with an anode, a light-emitting layer including quantum dots, and a cathode. The light-emitting element includes: an electron transport layer provided between the cathode and the light-emitting layer; and a hole tunneling insulating layer provided between the anode and the light-emitting layer and in contact with the anode and the light-emitting layer.

Abstract: A light-emitting element (2) includes: an anode (4); a hole transport layer (6); a light-emitting layer (8) containing quantum dots (16); an electron transport layer (10); and a cathode (12), arranged in this order, the light-emitting element further including a charge blocking layer (14) either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

Abstract: A light-emitting device includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer containing carbon and a metal oxide in a prescribed, adjusted ratio.

Abstract: A light-emitting element includes: an anode; a cathode provided across from the anode; and a light-emitting layer provided between the anode and the cathode, and containing first quantum dots and second quantum dots, the first quantum dots each having a core-shell structure including a first core and a first shell provided on a surface of the first core, and the second quantum dots each having a core-shell structure including a second core and a second shell provided on a surface of the second core. A CBM of the first shell is lower than a CBM of the second shell, and a VBM of the first shell is lower than a VBM of the second shell.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: A display device according to one aspect of the present invention includes: a display unit configured to have display information and emits visible light having a continuous spectrum; an infrared cut-off part configured to transmit the visible light from the display unit and to reduce the amount of infrared light striking the display unit; and a reflecting part configured to reflect the visible light having passed through the infrared cut-off part. The infrared cut-off part includes a first polymer film and a second polymer film, the first polymer film includes an infrared cut-off layer configured to reduce infrared light transmission, and the second polymer film includes a high-retardation polyester film and is disposed between the first polymer film and the display unit.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

Abstract: An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Abstract: A light-emitting element includes a hole transport layer between a light-emitting layer and an anode, the hole transport layer containing either a metal oxide of (NiO)1-x(LaNiO3)x (composition formula 1) or (CuyO)1-x(LaNiO3)x (composition formula 2), where 0<x?1 and 1?y?2.

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: A light-emitting element is provided with an anode, a light-emitting layer including quantum dots, and a cathode. The light-emitting element includes: an electron transport layer provided between the cathode and the light-emitting layer; and a hole tunneling insulating layer provided between the anode and the light-emitting layer and in contact with the anode and the light-emitting layer.

Abstract: A light-emitting element (2) includes: an anode (4); a hole transport layer (6); a light-emitting layer (8) containing quantum dots (16); an electron transport layer (10); and a cathode (12), arranged in this order, the light-emitting element further including a charge blocking layer (14) either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

Abstract: The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.