Abstract: A light-emitting device includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer containing carbon and a metal oxide in a prescribed, adjusted ratio.

Abstract: A light-emitting element includes: an anode; a cathode provided across from the anode; and a light-emitting layer provided between the anode and the cathode, and containing first quantum dots and second quantum dots, the first quantum dots each having a core-shell structure including a first core and a first shell provided on a surface of the first core, and the second quantum dots each having a core-shell structure including a second core and a second shell provided on a surface of the second core. A CBM of the first shell is lower than a CBM of the second shell, and a VBM of the first shell is lower than a VBM of the second shell.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: A display device according to one aspect of the present invention includes: a display unit configured to have display information and emits visible light having a continuous spectrum; an infrared cut-off part configured to transmit the visible light from the display unit and to reduce the amount of infrared light striking the display unit; and a reflecting part configured to reflect the visible light having passed through the infrared cut-off part. The infrared cut-off part includes a first polymer film and a second polymer film, the first polymer film includes an infrared cut-off layer configured to reduce infrared light transmission, and the second polymer film includes a high-retardation polyester film and is disposed between the first polymer film and the display unit.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

Abstract: An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Abstract: A light-emitting element includes a hole transport layer between a light-emitting layer and an anode, the hole transport layer containing either a metal oxide of (NiO)1-x(LaNiO3)x (composition formula 1) or (CuyO)1-x(LaNiO3)x (composition formula 2), where 0<x?1 and 1?y?2.

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: A light-emitting element is provided with an anode, a light-emitting layer including quantum dots, and a cathode. The light-emitting element includes: an electron transport layer provided between the cathode and the light-emitting layer; and a hole tunneling insulating layer provided between the anode and the light-emitting layer and in contact with the anode and the light-emitting layer.

Abstract: A light-emitting element (2) includes: an anode (4); a hole transport layer (6); a light-emitting layer (8) containing quantum dots (16); an electron transport layer (10); and a cathode (12), arranged in this order, the light-emitting element further including a charge blocking layer (14) either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

Abstract: The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Abstract: A backlight according to an embodiment includes a reflecting portion, a nonwoven fabric disposed opposing the reflecting portion, a reflective polarization portion disposed along a surface of the nonwoven fabric opposite to the surface of the nonwoven fabric opposing the reflecting portion, a side wall surrounding a cavity formed between the reflecting portion and the nonwoven fabric, and a light source disposed proximate the side wall and configured to illuminate light in the cavity, wherein a haze value of the nonwoven fabric is 90% or greater, an effective transmittance of the nonwoven fabric is 0.8 or greater, and a basis weight of the nonwoven fabric is 60 g/m2 or greater.

Abstract: A light-emitting device includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer containing carbon and a metal oxide in a prescribed, adjusted ratio.

Abstract: An electroluminescent element according to an aspect of the disclosure includes: a pair of a cathode electrode and an anode electrode; a light-emitting layer provided between the cathode electrode and the anode electrode; an electron transport layer provided between the cathode electrode and the light-emitting layer; and a hole transport layer provided between the anode electrode and the light-emitting layer. The light-emitting layer includes ZnSe-based quantum dots including ZnSe and one of the electron transport layer and the hole transport layer is composed of ZnO particles having an average particle size of 3 nm or greater and 30 nm or less.

Abstract: A detection device includes a plurality of detection units formed on a semiconductor circuit, a correction capacitive element that indicates a correction capacitance value for correcting detected capacitance values detected by the detection units, a difference acquisition circuit that acquires a difference value between each of the detected capacitance values and the correction capacitance value, and a conversion circuit that converts the difference value into a digital signal. The correction capacitive element, the difference acquisition circuit, and the conversion circuit are formed on the semiconductor circuit.

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: Gas detection performance is enhanced with a configuration that does not need an air current generating device. In a gas sensor, three or more gas sensor elements are arranged such that two or more gas sensor elements have substantially the same gas response characteristic, and a first phantom line connecting two of the elements intersects an element except for the elements forming the first phantom line or intersects at least one second phantom line formed by elements except for the elements forming the first phantom line.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.