Patents by Inventor Noboru Kitamori
Noboru Kitamori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10872841Abstract: The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.Type: GrantFiled: June 1, 2016Date of Patent: December 22, 2020Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Takayuki Naba, Hiromasa Kato, Noboru Kitamori
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Patent number: 10366938Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.Type: GrantFiled: September 6, 2018Date of Patent: July 30, 2019Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Hiromasa Kato, Noboru Kitamori, Takayuki Naba, Masashi Umehara
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Publication number: 20190006261Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.Type: ApplicationFiled: September 6, 2018Publication date: January 3, 2019Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Hiromasa KATO, Noboru KITAMORI, Takayuki NABA, Masashi UMEHARA
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Patent number: 10160690Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point bending strength of 500 MPa or higher, with attachment layers interposed therebetween, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, at least one of the thicknesses t1 and t2 is 0.6 mm or larger, a numerical relation: 0.10?|t1?t2|?0.30 mm is satisfied, and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. Due to above configuration, TCT properties of the silicon nitride circuit board can be improved even if the thicknesses of the front and rear metal plates are large.Type: GrantFiled: July 27, 2016Date of Patent: December 25, 2018Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Hiromasa Kato, Noboru Kitamori
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Patent number: 10109555Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.Type: GrantFiled: January 26, 2016Date of Patent: October 23, 2018Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Hiromasa Kato, Noboru Kitamori, Takayuki Naba, Masashi Umehara
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Publication number: 20180190568Abstract: The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.Type: ApplicationFiled: June 1, 2016Publication date: July 5, 2018Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Takayuki NABA, Hiromasa KATO, Noboru KITAMORI
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Publication number: 20180057412Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point bending strength of 500 MPa or higher, with attachment layers interposed therebetween, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, at least one of the thicknesses t1 and t2 is 0.6 mm or larger, a numerical relation: 0.10?|t1?t2|?0.30 mm is satisfied, and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. Due to above configuration, TCT properties of the silicon nitride circuit board can be improved even if the thicknesses of the front and rear metal plates are large.Type: ApplicationFiled: July 27, 2016Publication date: March 1, 2018Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Hiromasa KATO, Noboru KITAMORI
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Publication number: 20180019182Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.Type: ApplicationFiled: January 26, 2016Publication date: January 18, 2018Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Hiromasa KATO, Noboru KITAMORI, Takayuki NABA, Masashi UMEHARA
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Patent number: 9030100Abstract: A highly durable cathode component for a discharge lamp is provided. A cathode component for a discharge lamp includes a barrel having a wire diameter of 2 to 35 mm and a tapered front end, wherein the cathode component comprises a tungsten alloy containing 0.5 to 3% by weight, in terms of oxide (ThO2), of a thorium component, not less than 90% of tungsten crystals are accounted for by tungsten crystals having a grain size in the range of 1 to 80 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a circumferential cross section of the barrel, and are accounted for by tungsten crystals having a grain size in the range of 10 to 120 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a side cross section of the barrel.Type: GrantFiled: February 13, 2013Date of Patent: May 12, 2015Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Hitoshi Aoyama, Masahiro Tatesawa, Noboru Kitamori
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Publication number: 20150028738Abstract: A highly durable cathode component for a discharge lamp is provided. A cathode component for a discharge lamp includes a barrel having a wire diameter of 2 to 35 mm and a tapered front end, wherein the cathode component comprises a tungsten alloy containing 0.5 to 3% by weight, in terms of oxide (ThO2), of a thorium component, not less than 90% of tungsten crystals are accounted for by tungsten crystals having a grain size in the range of 1 to 80 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a circumferential cross section of the barrel, and are accounted for by tungsten crystals having a grain size in the range of 10 to 120 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a side cross section of the barrel.Type: ApplicationFiled: February 13, 2013Publication date: January 29, 2015Inventors: Hitoshi Aoyama, Masahiro Tatesawa, Noboru Kitamori
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Patent number: 5370837Abstract: A high temperature heat-treating jig characterized by forming a tungsten layer or a tungsten alloy layer on the surface of a heat-resistant base to avoid discoloration and color shading during the heat treatment at a high temperature.Type: GrantFiled: January 12, 1994Date of Patent: December 6, 1994Assignee: Kabushiki Kaisha ToshibaInventors: Masanori Kibata, Noboru Kitamori, Shigeki Kajima, Kazunori Yokosu, Mituo Kawai, Hideo Ishihara, Noriaki Yagi
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Patent number: 5288561Abstract: A high temperature heat-treating jig characterized by forming a tungsten layer or a tungsten alloy layer on the surface of a heat-resistant base to avoid discoloration and color shading during the heat treatment at a high temperature.Type: GrantFiled: October 30, 1991Date of Patent: February 22, 1994Assignee: Kabushiki Kaisha ToshibaInventors: Masanori Kibata, Noboru Kitamori, Shigeki Kajima, Kazunori Yokosu, Mituo Kawai, Hideo Ishihara, Noriaki Yagi