Patents by Inventor Noboru Negoro

Noboru Negoro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240048139
    Abstract: A gate drive circuit that drives a switching element including a first drain, a first source, and a first gate includes: a first terminal to which a gate control signal is input; a gate signal line connecting the first terminal and the first gate; a resistance element inserted in the gate signal line; a capacitance element connected in parallel with the resistance element; a clamp circuit that performs a clamp operation of clamping a voltage between the first gate and the first source to a voltage lower than a threshold voltage of the switching element when the gate control signal indicates an off period of the switching element; and a clamp control circuit that controls whether to prohibit the clamp operation of the clamp circuit in the off period.
    Type: Application
    Filed: October 13, 2021
    Publication date: February 8, 2024
    Inventors: Koji TAKAHASHI, Manabu YANAGIHARA, Noboru NEGORO, Takeshi AZUMA
  • Publication number: 20220345128
    Abstract: A gate drive circuit that drives a power device by controlling charge and discharge of gate capacitance of the power device includes: a first semiconductor switch that charges the gate capacitance by being brought into conduction according to a first control signal; a second semiconductor switch that discharges the gate capacitance by being brought into conduction according to a second control signal; and a slew rate control circuit that is connected between a gate of the power device and a ground line, and controls a slew rate during discharge. The slew rate control circuit includes a capacitor and a third semiconductor switch connected in series. The third semiconductor switch is brought into conduction according to the second control signal.
    Type: Application
    Filed: December 7, 2020
    Publication date: October 27, 2022
    Inventors: Yuta NAGATOMI, Shingo ENOMOTO, Songbaek CHOE, Osamu TABATA, Noboru NEGORO
  • Publication number: 20210111590
    Abstract: An electromagnetic resonance coupler includes a first transmission line on a top surface of a first dielectric layer, and a second transmission line on a top surface of a second dielectric layer. The first transmission line includes first and second resonance lines and first and second input-output lines. The second transmission line includes third and fourth resonance lines and third and fourth input-output lines. Third and fourth ground parts are provided separated from each other on the top surface of the second dielectric layer or the top surface of the first dielectric layer. The first resonance line and the third ground part are connected via a third connector, and the fourth resonance line and the fourth ground part are connected via a fourth connector.
    Type: Application
    Filed: February 19, 2018
    Publication date: April 15, 2021
    Applicant: PANASONIC CORPORATION
    Inventors: Yasufumi Kawai, Songbaek Choe, Shingo Enomoto, Noboru Negoro, Shuichi Nagai
  • Publication number: 20200186145
    Abstract: A gate driving circuit that controls a switching element includes: a startup switch which is provided between a gate voltage source and an output terminal; a termination switch which is provided between the output terminal and an output ground terminal; a startup resistor provided between a gate and a source of the startup switch; and a termination resistor provided between a gate and a source of the termination switch. At least one of the startup resistor or the termination resistor is configured to adjust a resistance value.
    Type: Application
    Filed: February 18, 2020
    Publication date: June 11, 2020
    Inventors: Shuichi NAGAI, Shingo ENOMOTO, Noboru NEGORO, Yasufumi KAWAI, Songbaek CHOE, Osamu TABATA
  • Patent number: 9680001
    Abstract: A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor layers each including a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than a band gap of the first nitride semiconductor layer, the first and second nitride semiconductor layers being laminated in this order on the buffer layer; a first electrode; and a second electrode. A channel layer is formed in each of the semiconductor layers at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer. A carrier concentration of the channel layer in the uppermost semiconductor layer is lower than a carrier concentration of each of the channel layers of the other semiconductor layers.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: June 13, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Daisuke Shibata, Noboru Negoro
  • Publication number: 20160218708
    Abstract: A gate drive apparatus with an improved gate drive capability to control a switching device includes a signal transmitter, a signal receiver, and an electromagnetic resonance coupler. The signal transmitter includes a gate control signal generator, an oscillator circuit, and a mixer circuit. The signal receiver includes a positive voltage outputting rectifier circuit, a negative voltage outputting rectifier circuit, and a pull-down resistor. The positive voltage outputting rectifier circuit has a positive voltage outputting diode, a first inductor, and a first capacitor. The negative voltage outputting rectifier circuit has a negative voltage outputting diode, a second inductor, and a second capacitor. In the signal receiver, the diode of each rectifier circuit has an anode electrode made of a metal having a low work function. This configuration improves an output voltage amplitude of the gate drive apparatus.
    Type: Application
    Filed: April 1, 2016
    Publication date: July 28, 2016
    Inventor: NOBORU NEGORO
  • Publication number: 20160049347
    Abstract: A semiconductor device includes a semiconductor layer made of nitride semiconductor, an ohmic electrode and a schottky electrode both formed on the semiconductor layer, a first insulating film containing a small amount of hydrogen per unit volume for covering the semiconductor device on a top face defined between the ohmic electrode and the schottky electrode and also covering the schottky electrode, and a second insulating film formed on the first insulating film and containing a greater amount of hydrogen per unit volume than the first insulating film.
    Type: Application
    Filed: October 28, 2015
    Publication date: February 18, 2016
    Inventors: NOBORU NEGORO, NAOHIRO TSURUMI, DAISUKE SHIBATA
  • Patent number: 9231059
    Abstract: A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III nitride semiconductor having a wider band gap than the first group III nitride semiconductor; and an electrode formed on the barrier layer. The device further includes a cap layer formed on the barrier layer at a side of the electrode, and made of third group III nitride semiconductor containing a mixture of single crystals and polycrystals.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: January 5, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Noboru Negoro, Hidekazu Umeda, Nanako Hirashita, Tetsuzo Ueda
  • Patent number: 9190474
    Abstract: A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III nitride semiconductor having a wider band gap than the first group III nitride semiconductor; and an electrode formed on the barrier layer. The device further includes a cap layer formed on the barrier layer at a side of the electrode, and made of third group III nitride semiconductor containing a mixture of single crystals and polycrystals.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: November 17, 2015
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Noboru Negoro, Hidekazu Umeda, Nanako Hirashita, Tetsuzo Ueda
  • Publication number: 20150303292
    Abstract: A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor layers each including a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than a band gap of the first nitride semiconductor layer, the first and second nitride semiconductor layers being laminated in this order on the buffer layer; a first electrode; and a second electrode. A channel layer is formed in each of the semiconductor layers at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer. A carrier concentration of the channel layer in the uppermost semiconductor layer is lower than a carrier concentration of each of the channel layers of the other semiconductor layers.
    Type: Application
    Filed: July 1, 2015
    Publication date: October 22, 2015
    Inventors: DAISUKE SHIBATA, NOBORU NEGORO
  • Publication number: 20140097433
    Abstract: A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III nitride semiconductor having a wider band gap than the first group III nitride semiconductor; and an electrode formed on the barrier layer. The device further includes a cap layer formed on the barrier layer at a side of the electrode, and made of third group III nitride semiconductor containing a mixture of single crystals and polycrystals.
    Type: Application
    Filed: December 11, 2013
    Publication date: April 10, 2014
    Applicant: Panasonic Corporation
    Inventors: Noboru NEGORO, Hidekazu UMEDA, Nanako HIRASHITA, Tetsuzo UEDA
  • Patent number: 8018372
    Abstract: The spread spectrum radar apparatus in the present invention (i) includes: a transmission code generator (110); a reception code generator (121) generating a reception code obtained by delaying a transmission code; a spread modulator (112) spread-modulating a signal generated by a local oscillator (111) using the transmission code; a transmission antenna (113) transmitting the spread-modulated signal; a reception antenna (120) receiving a signal; a spread demodulator (122) demodulating the signal using the reception code to provide a correlation signal; a mixer (123) mixing the correlation signal and the signal generated by the local oscillator (111) to generate a radar signal; a virtual image determining unit (130) determining a virtual image; and a radar signal calculation device (160) calculating the radar signal using a virtual image determination signal, and (ii) adds a calculation and an offset signal for suppressing a peak intensity of the virtual image when the virtual image occurs.
    Type: Grant
    Filed: July 28, 2008
    Date of Patent: September 13, 2011
    Assignee: PANASONIC Corporation
    Inventors: Noboru Negoro, Takeshi Fukuda, Hiroyuki Sakai
  • Patent number: 7855677
    Abstract: The code generation apparatus includes: a clock generator which generates a clock signal of a first frequency; a timing controller which generates a timing signal of a second frequency lower than the first frequency; a code table storage in which a plurality of code sequences serving as a source for a pseudo-noise code is stored; an address controller which selects, according to the timing signal, a code sequence to be read, from among a plurality of code sequences; a partial code sequence extractor which extracts, as a partial code sequence, a code of a predetermined length, from the code sequence to be read; and a parallel-series convertor which outputs the partial code sequence one bit at a time, according to the clock signal.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: December 21, 2010
    Assignee: Panasonic Corporation
    Inventors: Noboru Negoro, Takeshi Fukuda, Hiroyuki Sakai
  • Publication number: 20100194627
    Abstract: The spread spectrum radar apparatus in the present invention (i) includes: a transmission code generator (110); a reception code generator (121) generating a reception code obtained by delaying a transmission code; a spread modulator (112) spread-modulating a signal generated by a local oscillator (111) using the transmission code; a transmission antenna (113) transmitting the spread-modulated signal; a reception antenna (120) receiving a signal; a spread demodulator (122) demodulating the signal using the reception code to provide a correlation signal; a mixer (123) mixing the correlation signal and the signal generated by the local oscillator (111) to generate a radar signal; a virtual image determining unit (130) determining a virtual image; and a radar signal calculation device (160) calculating the radar signal using a virtual image determination signal, and (ii) adds a calculation and an offset signal for suppressing a peak intensity of the virtual image when the virtual image occurs.
    Type: Application
    Filed: July 28, 2008
    Publication date: August 5, 2010
    Applicant: PANASONIC CORPORATION
    Inventors: Noboru Negoro, Takeshi Fukuda, Hiroyuki Sakai
  • Patent number: 7724182
    Abstract: The radar system includes: a transmission circuit transmitting the radar waves via a transmission antenna; a receiving circuit receiving the reflected waves via a receiving antenna; a delay line having an end connected to aid transmission circuit and the other end connected to said receiving circuit, which delays the radar waves by a predetermined delay amount; a correlation circuit/coherent detection circuit which detects a waveform having a strength equal to or higher than a predetermined strength, from a signal provided from said receiving circuit which obtains the signal from the reflected waves or the delayed radar waves; and a level decision circuit which judges, during self-diagnosis, whether or not the detected waveform is a waveform of the delayed radar wave according to the predetermined delay amount, and if the waveform is not the waveform of the delayed radar wave, determines that abnormality occurs in said radar system.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: May 25, 2010
    Assignee: Panasonic Corporation
    Inventors: Kenichi Inoue, Daisuke Ueda, Noboru Negoro, Hiroyuki Sakai
  • Publication number: 20090135053
    Abstract: The code generation apparatus includes: a clock generation unit (160) which generates a clock signal of a first frequency; a timing control unit (130) which generates a timing signal of a second frequency lower than the first frequency; a code table storage unit (120) in which a plurality of code sequences serving as a source for a pseudo-noise code is stored; an address control unit (110) which selects, according to the timing signal, a code sequence to be read, from among a plurality of code sequences; a partial code sequence extraction unit (140) which extracts, as a partial code sequence, a code of a predetermined length, from the code sequence to be read; and a parallel-series conversion unit (150) which outputs the partial code sequence by one bit at a time, according to the clock signal.
    Type: Application
    Filed: April 3, 2007
    Publication date: May 28, 2009
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Noboru Negoro, Takeshi Fukuda, Hiroyuki Sakai
  • Publication number: 20090003412
    Abstract: To provide a spread spectrum radar apparatus which can lower the probability for misidentifying a presence of object.
    Type: Application
    Filed: February 27, 2008
    Publication date: January 1, 2009
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Noboru NEGORO, Takeshi FUKUDA, Hiroyuki SAKAI
  • Publication number: 20080252513
    Abstract: The radar system includes: a transmission circuit transmitting the radar waves via a transmission antenna; a receiving circuit receiving the reflected waves via a receiving antenna; a delay line having an end connected to aid transmission circuit and the other end connected to said receiving circuit, which delays the radar waves by a predetermined delay amount; a correlation circuit/coherent detection circuit which detects a waveform having a strength equal to or higher than a predetermined strength, from a signal provided from said receiving circuit which obtains the signal from the reflected waves or the delayed radar waves; and a level decision circuit which judges, during self-diagnosis, whether or not the detected waveform is a waveform of the delayed radar wave according to the predetermined delay amount, and if the waveform is not the waveform of the delayed radar wave, determines that abnormality occurs in said radar system.
    Type: Application
    Filed: April 9, 2008
    Publication date: October 16, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Kenichi INOUE, Daisuke UEDA, Noboru NEGORO, Hiroyuki SAKAI