Abstract: A method for forming an interlayer insulating film includes the steps of: forming a metal film on a substrate; forming a first insulating film on the metal film; patterning the first insulating film by selectively etching the first insulating film; patterning the metal film by etching the metal film using the patterned first insulating film as a mask; forming an overhang portion of the first insulating film on the metal film by selectively etching a side portion of the metal film; and forming a second insulating film on the entire structure.

Abstract: The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which at least one oxygen is bonded to the phosphorous, and forming a silicon containing insulating film containing P2O3 on a substrate by using the deposition gas.

Abstract: This invention concerns with such methods to form the film of semiconductor device, without degrading any desirable characteristics of the device, that enables the endpoint detection pertaining to the polishing process of either the conductive film or the insulating film. This invention includes such three processing steps: (1) to form DLC film 3, (2) to an form insulating film 6 upon a DLC film 3, (2) to expose a plasma gas containing fluorine to the DLC film 3, (3) to an form insulating film 6 upon the DLC film 3, and (4) to polish the insulating film 6 by means of Chemical Mechanical Polishing (CMP), and to stop the polishing at the point in time when the DLC film 3 appears at the surface of the substrate.

Abstract: There is provided a semiconductor manufacturing system and a method for cleaning the same. Silicon oxide adhering to Elements, which constitute the system, is removed by a cleaning gas containing an HF gas and a water vapor together with by heating the elements.

Abstract: A method of cleaning a substrate is provided which can remove contamination after treatment of a substrate surface by use of chemicals etc. prior to film formation. The method of cleaning the substrate surface uses of a vapor of chlorosulfonic acid (SO2Cl(OH)).

Abstract: A method of cleaning a substrate is provided which can remove contamination after working a surface of a substrate by use of chemicals etc. or treat the surface of a substrate by use of the chemicals, etc. prior to film formation. The method of cleaning the substrate can clean the surface of the substrate 30 by use of a vapor of chlorosulfonic acid (SO2Cl(OH)).

Abstract: The present invention discloses a method for forming a flattened interlayer insulating film to cover the wiring layer or the like of a semiconductor IC device, and a manufacturing method of a semiconductor device. The film-forming method of the present invention comprises the steps of preparing deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which oxygen is bonded to at least one of bonding hands of phosphorous, and forming a silicon containing insulating film 21 containing P2O3 on a substrate 101 by using said deposition gas.

Abstract: Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O3) in oxygen (O2) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface 12a of the substrate 102 by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film 13 on the surface 12a of the substrate 102.

Abstract: Disclosed is a film formation method of an interlayer insulating film which is flattened to cover a wiring layer of a semiconductor integrated circuit device, in which a film-forming gas is activated by converting the film-forming gas into a plasma, the film-forming gas being composed of either a mixed gas containing a phosphorus-containing compound containing trivalent phosphorus, which takes a Si—O—P structure, and a silicon-containing compound containing at most one oxygen atom or an additional mixed gas prepared by adding an oxidative gas to said mixed gas; and a silicon-containing insulating film containing P2O5 is formed on a substrate.

Abstract: There is provided a semiconductor device manufacturing system capable of carrying out resist stripping or surface pre-treatment of a substrate by use of a gas such as chlorosulfuric acid with high reactivity The manufacturing system comprises a process vessel 101 formed integrally of a process chamber 1 for treating respective surfaces of substrates 202 with a chemical vapor and a chemical storage chamber 2 for storing chemical for generating the chemical vapor, and a chemical heating means 5 for heating the chemicals stored in the chemical storage chamber 2 to evaporation.

Abstract: The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing.

Abstract: This invention concerns a method for the removal of a resist film containing phosphorus (P) or boron (B) or other inorganic element. Specifically, a resist film 42 formed on a substrate 41 is exposed to the liquid or gas of chlorosulfonic acid ?SO.sub.2 Cl(OH)! and caused to react with the acid and, consequently, is enabled to be removed from the substrate 41.

Abstract: A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.

Abstract: A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.

Abstract: In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.

Abstract: A method for reforming an insulating film such as a BSG film formed by a CVD technique. The method reduces the parasitic capacitance between conductor layers having an intervening film, especially a BSG film, and includes the steps of depositing a BSG film on a substrate from a gaseous source and exposing the BSG film to a reforming gas plasma.

Abstract: The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.

Abstract: The invention relates to a method for forming a BSG film by means of chemical vapor deposition, has an object which is to provide a film forming method making it possible to obtain a BSG film of high denseness and of low hygroscopicity even immediately after the film has been formed at a low temperature, and comprises a process of forming a borosilicate glass film (BSG film) on a substrate using a mixed gas of an organometallic compound having Si--O--B bond and ozone (O.sub.3).

Abstract: The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.

Abstract: The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.