Patents by Inventor Nobou Aoi

Nobou Aoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090123664
    Abstract: An interlayer insulating film formation method for forming an interlayer insulating film on a substrate includes the step of forming the interlayer insulating film through plasma CVD by using an organic silicon compound including no oxygen atom and an organic silicon compound including an oxygen atom as materials.
    Type: Application
    Filed: January 14, 2009
    Publication date: May 14, 2009
    Applicant: PANASONIC CORPORATION
    Inventor: Nobou AOI
  • Patent number: 6300242
    Abstract: After a first metal film and a first interlayer insulating film are deposited successively on an insulating film on a semiconductor substrate, a via hole is formed in the first interlayer insulating film. A second metal film is grown in the via hole to form a via contact composed of the second metal film, while a recessed portion is formed over the via contact in the via hole. A cap layer composed of a material different from the material of the first metal film is formed in the recessed portion. Then, the first metal film is patterned by using a mask pattern for forming a lower interconnect and a cap layer as a mask, whereby a lower interconnect is formed.
    Type: Grant
    Filed: April 27, 2000
    Date of Patent: October 9, 2001
    Assignee: Matsuhita Electronics Corporation
    Inventors: Tetsuya Ueda, Eiji Tamaoka, Nobou Aoi, Hideo Nakagawa