Abstract: A failure prediction device is provided for predicting, using a structure having a high degree of design freedom, failure at a soldered joint due to vibration stress, and a circuit board using the same. The failure prediction device is disposed on a substrate having a mounting component that is fixed thereon through a solder joint. The failure prediction device is provided with a load amplifying portion that includes a pair of support leg portions each having one end to be fixed to the substrate or the mounting component, and a sacrificial fracture portion that is supported by the other ends of the pair of support leg portions, wherein the load amplifying portion transmits, to the sacrificial fracture portion via the pair of support leg portions, vibration that is applied to the substrate.

Abstract: A failure prediction device is provided for predicting, using a structure having a high degree of design freedom, failure at a soldered joint due to vibration stress, and a circuit board using the same. The failure prediction device is disposed on a substrate having a mounting component that is fixed thereon through a solder joint. The failure prediction device is provided with a load amplifying portion that includes a pair of support leg portions each having one end to be fixed to the substrate or the mounting component, and a sacrificial fracture portion that is supported by the other ends of the pair of support leg portions, wherein the load amplifying portion transmits, to the sacrificial fracture portion via the pair of support leg portions, vibration that is applied to the substrate.

Abstract: Problem: To provide a method for manufacturing metal staple fibers that allows for the efficient manufacture of uniform metal staple fibers. Solution: A method for manufacturing metal staple fibers including a cutting step of cutting a metal fiber bundle coated with a fluorine-based polymer into a staple fiber bundle.

Abstract: Compositions consisting essentially of the reaction product (including unreacted components) obtained by mixing (a) one or more selected fluorinated compounds and (b) one or more selected organic agents and providing in-situ generation of fluoride ions. Also, kits for forming such compositions and methods for using such compositions.

Abstract: A non-volatile memory cell includes a MOS transistor of double gate construction. The MOS memory transistor includes a floating gate structure which includes electrically separated first and second segmented floating gates (4a; 4b). For the purpose of writing data, electrons are independently injected into the first and second segmented floating gates. Data are stored in the MOS memory transistor in three different non-volatile storage levels; one with electron accumulated either one of the two segmented floating gates; another with electrons injected into both of the segmented floating gates; and still another with no electrons accumulated on both of the segmented floating gates.

Abstract: A variable-threshold non-volatile memory in which a potential falling between a selection and a non-selection level is applied to the gates and the resultant drain current is measured to determine if one of the transistors has an abnormal threshold voltage.