Abstract: An antenna device includes a first triplate line and one or more second triplate lines that are connected to the first triplate line so as to cross the first triplate line. Two ground plates of each second triplate line include respective flange portions that are in contact with and fixed to a surface of one of two ground plates of the first triplate line. At least one of a surface of each flange portion that contacts the one of the ground plates of the first triplate line and the surface of the one of the ground plates of the first triplate line that contacts each flange portion is provided with an irregular portion for reducing a contact area between each flange portion and the one of the ground plates.

Abstract: An antenna device has a feed line including a triplate line. Each triplate line has a central conductor and two ground plates sandwiching the central conductor via an air layer. At least a part of the triplate line is configured such that the two ground plates sandwich a center substrate including a wiring pattern as the central conductor provided on a dielectric substrate via the air layer.

Abstract: An antenna device includes an antenna element including a dielectric substrate including a first surface and a second surface surfaces, a built-in feed line formed on the first surface, and a radiating element formed on the second surface and along the built-in feed line, a triplate line including a first outer conductor and a second outer conductor parallel to each other, and a central conductor arranged therebetween, a connecting portion at one end of the dielectric substrate to electrically connect the built-in feed line to the central conductor, a first hole and a second hole formed in the first outer conductor and in communication with each other. The first hole includes an opposite surface to the built-in feed line on the connecting portion with a specified space therebetween. The connecting portion is inserted in the second hole. The second hole includes an opposite regulating surface to the first surface of the connecting portion of the dielectric substrate.

Abstract: An antenna device includes an antenna element including a dielectric substrate including a first principal surface and a second principal surface, a built-in feed line provided on the first principal surface of the dielectric substrate, and a radiating element provided on the second principal surface of the dielectric substrate and along the built-in feed line so that the radiating element is fed from the built-in feed line, a triplate line including a first outer conductor and a second outer conductor parallel to each other, and a central conductor arranged therebetween to feed excitation power to the antenna element, a connecting member which electrically connects the central conductor and the built-in feed line, a projecting piece from one end of the dielectric substrate toward the second outer conductor, and a first hole and a second hole provided in the first outer conductor and in communication with each other.

Abstract: An antenna device (1) includes a plurality of triplate lines (31, 32) each of which includes a central conductor (401/122A) arranged between one pair of outer conductors (30, 50/121A, 123A) parallel to each other, and a plurality of antenna elements (14a) to transmit high frequency signals distributed by the plurality of triplate lines (31, 32). The plurality of triplate lines (31, 32) include a first triplate line (31) and a second triplate line (32) arranged non-parallel to each other and at a predetermined angle therebetween so that respective central conductors (401/122A) of the first triplate line (31) and the second triplate line (32) are intersected and connected together.

Abstract: An antenna device includes an input/output portion for a high frequency signal to be input or output, a distributing portion for distributing the high frequency signal input to the input/output portion into a plurality of high frequency signals, a phase shifting portion for imparting the plurality of high frequency signals with a predetermined amount of phase shift, and a feeding portion for feeding a plurality of antenna elements with the plurality of high frequency signals imparted with the predetermined amount of phase shift to cause the plurality of antenna elements to radiate the plurality of high frequency signals. The feeding portion is configured as a triplate line with a center conductor placed between one pair of parallel plate shaped outer conductors.

Abstract: An electromagnetic wave radiation coaxial cable and a communication system using the same. The electromagnetic wave radiation coaxial cable includes an inner conductor which is formed of a conductor and extends along a cable axis, an insulator covering the inner conductor, and an outer conductor spirally wound around the insulator in a single winding at a predetermined pitch to provide a gap from which a part of the insulator is exposed. Following formula is established: ? r - 1 < ? P < ? r + 1 when ? is a wavelength of a radio frequency signal to be transmitted or received, ?r is a relative dielectric constant of the insulator at the wavelength ?, and P is a winding pitch of the outer conductor along the direction of the cable axis.

Abstract: The present invention provides a high/low frequency dual wireless location detection and information transmission system which is high in reliability and maintainability, and can be easily installed. A leakage coaxial inner conductor and a conductor line provided in parallel are short-circuited at an end, a single leakage coaxial operation and a loop operation of the inner conductor and the conductor line are performed at the same time, the ID of a tag is communicated using magnetic fields which locally exist near the conductor line by the loop, and wireless position detection and information communications which are less affected by the influence of ambient environments due to electromagnetic waves in a closed area are realized by open-type lines.

Abstract: A transmission line has a triplate line including a first outer conductor and a second outer conductor disposed in parallel with each other at a predetermined interval, and a central conductor disposed in a space between the first outer conductor and the second outer conductor; and a dielectric spacer interposed between the first and second outer conductors and the central conductor and configured to support the central conductor. The central conductor has a supported portion supported by the dielectric spacer, and first and second high-impedance portions having characteristic impedances higher than a characteristic impedance in the supported portion. The first and second high-impedance portions are disposed on input and output sides, respectively, of the supported portion.

Abstract: An electromagnetic wave radiation coaxial cable and a communication system using the same. The electromagnetic wave radiation coaxial cable includes an inner conductor which is formed of a conductor and extends along a cable axis, an insulator covering the inner conductor, and an outer conductor spirally wound around the insulator in a single winding at a predetermined pitch to provide a gap from which a part of the insulator is exposed. Following formula is established: ? r - 1 < ? P < ? r + 1 when ? is a wavelength of a radio frequency signal to be transmitted or received, ?r is a relative dielectric constant of the insulator at the wavelength ?, and P is a winding pitch of the outer conductor along the direction of the cable axis.

Abstract: A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4).

Abstract: A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light.

Abstract: The present invention provides a high/low frequency dual wireless location detection and information transmission system which is high in reliability and maintainability, and can be easily installed. A leakage coaxial inner conductor and a conductor line provided in parallel are short-circuited at an end, a single leakage coaxial operation and a loop operation of the inner conductor and the conductor line are performed at the same time, the ID of a tag is communicated using magnetic fields which locally exist near the conductor line by the loop, and wireless position detection and information communications which are less affected by the influence of ambient environments due to electromagnetic waves in a closed area are realized by open-type lines.

Abstract: A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4).

Abstract: The present invention can provide a stamper for minute structure transfer to be excellent in durability. The present invention is characterized by which a minute pattern as formed in one side of a substrate comes in contact with a material to be transferred and the minute pattern is transferred on a resin layer of a surface of the material to be transferred. At least one layer of a thin film is mounted on at least one side of both surfaces of the substrate, the substrate and the thin film are different in a coefficient of linear expansion each other, and the substrate is curved to swell up to be convex in the side of the minute pattern by an internal stress generated in the thin film.

Abstract: A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light.

Abstract: A waveguide type variable optical attenuator is provided with a substrate for forming a waveguide for optical signal propagation; a waveguide element comprising 2 arm waveguides arranged on the surface of the substrate for constituting a portion of the waveguide and cladding for covering the arm waveguides and the surface of the substrate; and a heater arranged on the surface of the waveguide element for heating the arm waveguides. The 2 arm waveguides are connected thermally.

Abstract: A waveguide type variable optical attenuator is provided with a substrate for forming a waveguide for optical signal propagation; a waveguide element comprising 2 arm waveguides arranged on the surface of the substrate for constituting a portion of the waveguide and cladding for covering the arm waveguides and the surface of the substrate; and a heater arranged on the surface of the waveguide element for heating the arm waveguides. The 2 arm waveguides are connected thermally.

Abstract: A method for forming a groove which enable exact formation of vertical wall surface and a method for manufacturing an optical waveguide element such as an optical switch and an optical multiplexer/demultiplexer applying this forming method are provided. Such method comprising forming a sacrifice covering layer having predetermined thickness over said predetermined layer, performing dry etching from upper of said sacrifice covering layer, and decreasing gas being contained in etching gas generated by said dry etching processing and containing plenty of movement component to horizontal direction by collide with a wall surface in a groove formed through said sacrifice covering layer, and forming said groove through said predetermined layer positioned under said sacrifice covering layer by gas containing mainly movement component to vertical direction.

Abstract: A method for forming a groove which enable exact formation of vertical wall surface and a method for manufacturing an optical waveguide element such as an optical switch and an optical multiplexer/demultiplexer applying this forming method are provided. Such method comprising forming a sacrifice covering layer having predetermined thickness over said predetermined layer, performing dry etching from upper of said sacrifice covering layer, and decreasing gas being contained in etching gas generated by said dry etching processing and containing plenty of movement component to horizontal direction by collide with a wall surface in a groove formed through said sacrifice covering layer, and forming said groove through said predetermined layer positioned under said sacrifice covering layer by gas containing mainly movement component to vertical direction.