Abstract: An insulating device includes a first element, a second element, a first lead, a second lead, and a resin member. The second element is electrically connected to the first element. The first element is mounted on the first lead. The second lead includes a first surface and a second surface, the second surface being at a side opposite to the first surface. The second element is mounted to the first surface. the second lead is arranged to overlap the first element in a direction crossing the second surface of the second lead. The resin member seals the first element, the second element, the first lead, and the second lead.

Abstract: An insulating device includes a first electrode, a second electrode, and an insulating film. The insulating film is located between the first electrode and the second electrode. The insulating film includes a positive charged region. The positive charged region is located at a portion in a direction from the first electrode toward the second electrode.

Abstract: An insulating element includes a first coil; a second coil; and an inter-layer insulating film located between the first coil and the second coil. The inter-layer insulating film includes a first layer, a second layer, and a third layer located between the first layer and the second layer. The first layer is located between the first coil and the third layer. The second layer is located between the second coil and the third layer. A bandgap of the third layer is narrower than a bandgap of the first layer and a bandgap of the second layer.

Abstract: According to one embodiment, a photocatalyst body satisfies at least one condition described below, (1) a ratio of an absorption intensity at a wave number of 3450 cm?1 to a peak intensity of an absorption at about 1037 cm?1 being 2.5 or less in an analysis of a surface of the body, (2) a ratio of a maximum peak intensity of an absorption in a wave number range of not less than 1500 cm?1 and not more than 1700 cm?1 to a peak intensity of an absorption at about 1037 cm?1 being 0.7 or less in the analysis and (3) the photocatalyst body having no absorption peak in a wave number range of not less than 5000 cm?1 and not more than 5400 cm?1 or a ratio of a maximum peak intensity of an absorption to an absorption intensity at 5250 cm?1 being 1.7 or less in the analysis.

Abstract: A photocatalyst dispersion element includes: a photocatalytic material; a solvent; and an ion additive. The ion additive generates a cation having a smaller ion radius than a tetramethylammonium ion in the solvent.

Abstract: According to one embodiment, a photocatalyst body satisfies at least one condition described below, (1) a ratio of an absorption intensity at a wave number of 3450 cm?1 to a peak intensity of an absorption at about 1037 cm?1 being 2.5 or less in an analysis of a surface of the body, (2) a ratio of a maximum peak intensity of an absorption in a wave number range of not less than 1500 cm?1 and not more than 1700 cm?1 to a peak intensity of an absorption at about 1037 cm?1 being 0.7 or less in the analysis and (3) the photocatalyst body having no absorption peak in a wave number range of not less than 5000 cm?1 and not more than 5400 cm?1 or a ratio of a maximum peak intensity of an absorption to an absorption intensity at 5250 cm?1 being 1.7 or less in the analysis.

Abstract: A photocatalyst dispersion element includes: a photocatalytic material; a solvent; and an ion additive. The ion additive generates a cation having a smaller ion radius than a tetramethylammonium ion in the solvent.

Abstract: A photocatalyst dispersing element includes: a photocatalyst material; and a solvent. A hydrogen-ion exponent of the solvent is in a range of pH 2.1 or more and pH 5.7 or less. A method for manufacturing a photocatalyst dispersing element includes: adjusting a hydrogen-ion exponent in a solvent to be in a range of inhibiting aggregation of a photocatalyst material and of suppressing lowering of a degree of catalytic activity of the photocatalyst material; and mixing the photocatalyst material with the solvent.

Abstract: A photocatalyst dispersing element includes: a photocatalyst material; and a solvent. A hydrogen-ion exponent of the solvent is in a range of pH 2.1 or more and pH 5.7 or less. A method for manufacturing a photocatalyst dispersing element includes: adjusting a hydrogen-ion exponent in a solvent to be in a range of inhibiting aggregation of a photocatalyst material and of suppressing lowering of a degree of catalytic activity of the photocatalyst material; and mixing the photocatalyst material with the solvent.

Abstract: A dopant diffusion method includes: diffusing a dopant element into a semiconductor through an oxide film. The dopant element is contained in a compound gas having a gas partial pressure of not less than 0.1 torr and not more than 800 torr. A temperature of the semiconductor is set less than 750° C. and not more than 950° C. A method of manufacturing a semiconductor device including a semiconductor with a dopant element diffused therein, the method includes: diffusing a dopant element into the semiconductor through an oxide film. The dopant element is contained in a compound gas having a gas partial pressure of not less than 0.1 torr and not more than 800 torr, and a temperature of the semiconductor is set less than 750° C. and not more than 950° C.