Abstract: A pulley support structure for a belt-drive continuously variable transmission and a belt-drive continuously variable transmission are provided that are able to control the occurrence of Mindlin slip itself, and in cases where Mindlin slip has occurred, are able to effectively reduce the effects thereof. In this pulley support structure for a belt-drive continuously variable transmission, 2500 MPs or less is the maximum contact pressure during use between the raceway surfaces of the inner wheel and outer wheel and the rolling elements in the various roller bearings for rotatably supporting the pulleys for the continuously variable transmission. The rolling element surface hardness is HRc 60 or greater, and is at least 1 HRc harder than that of the raceway surfaces. The surface of the rolling element is nitrided or carbonitrided, and the nitrogen concentration in the surface is 0.2% by mass or greater and 2.0% by mass or less.

Abstract: A bearing residual life prediction method, a bearing residual life diagnostic apparatus and a bearing diagnostic system can be provided. The bearing diagnostic system 20 includes: an eddy current tester 11 that measures the impedance X of a certain portion of a bearing 24 before and after the use of the bearing; a bearing information transmitter 30 that transmits bearing information s1 containing the impedance X; and a bearing information receiver 31 that receives the information; a diagnostic section 12 that obtains the residual life information s2 of the bearing 24 based on the received impedance X; and a life information transmitter 36 that transmits the residual life information s2; and a life information receiver 40 that receives the information. Hence, the bearing used by the user can be inspected nondestructively, and the residual life of the bearing can be predicted.

Abstract: The present invention relates to an optical receptacle which prevents the occurrence of a large impact by collision of a plug body with an optical propagation member. The optical receptacle includes a solid sleeve having a cavity hole into which the plug body is inserted from its one end side and which has an even inner diameter so as not to substantially define a gap with respect to an outer diameter of the plug body and an optical propagation member fixedly secured to the other end side of the cavity hole, with the solid sleeve being formed such that a length from an end portion of the cavity hole on the plug body insertion side to the optical propagation member is longer than a maximum length of extension due to the elastic body of the terminal member.

Abstract: The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 1 tentatively designing manufacturing conditions of a silicon single crystal in a subsequent batch from a crystal quality result of a silicon single crystal in a previous batch; means 2 calculating a correction amount from an amount of change in F and/or G due to constituent members of the pulling apparatus in the subsequent batch; means 3 calculating a correction amount from an amount of change in F and/or G due to a manufacturing process in the subsequent batch; and means 4 adding the correction amount by the means 2 and/or the means 3 to the manufacturing conditions by the means 1 to calculate manufacturing conditions in th

Abstract: A rolling apparatus including an external member having a raceway surface on an inner peripheral surface thereof, an internal member having a raceway surface on an outer peripheral surface thereof, and a plurality of rolling elements which are rotatably provided between the raceway surface of the external member and the raceway surface of the internal member. A surface of at least one of the internal member, the external member, and the rolling elements is subjected to carbonitriding or nitriding; an area percentage of a nitride containing Si and Mn is 1% or more and 20% or less; surface hardness is HV750 or more. When depth from the raceway surface or depth from a rolling surface of the rolling element is defined as Z and diameter of the rolling element is defined as d, hardness at Z=0.045 d is HV650 to 850, and hardness at Z=0.18 d is HV400 to 800.

Abstract: The present invention relates to an optical receptacle which avoids the occurrence of a large impact at the insertion of the terminal member. The optical receptacle comprises a tubular slit sleeve in which a split is made in an axial direction and into which the plug body is introduced from its first end portion, a tubular solid sleeve into which the plug body introduced is inserted from its one end portion and which has an inner diameter which makes substantially no gap with respect to an outer diameter of the plug body, and an optical propagation member which is secured to the other end portion of the solid sleeve and which is optically coupled to the plug body, with a second end portion opposite to the first end portion of the slit sleeve and the one end portion of the solid sleeve being engaged to be connected to each other.

Abstract: An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.

Abstract: The present invention relates to an optical receptacle which avoids the occurrence of a large impact at the insertion of the terminal member. The optical receptacle comprises a tubular slit sleeve in which a split is made in an axial direction and into which the plug body is introduced from its first end portion, a tubular solid sleeve into which the plug body introduced is inserted from its one end portion and which has an inner diameter which makes substantially no gap with respect to an outer diameter of the plug body, and an optical propagation member which is secured to the other end portion of the solid sleeve and which is optically coupled to the plug body, with a second end portion opposite to the first end portion of the slit sleeve and the one end portion of the solid sleeve being engaged to be connected to each other.

Abstract: The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.

Abstract: The present invention relates to an optical receptacle which prevents the occurrence of a large impact by collision of a plug body with an optical propagation member. The optical receptacle includes a solid sleeve having a cavity hole into which the plug body is inserted from its one end side and which has an even inner diameter so as not to substantially define a gap with respect to an outer diameter of the plug body and an optical propagation member fixedly secured to the other end side of the cavity hole, with the solid sleeve being formed such that a length from an end portion of the cavity hole on the plug body insertion side to the optical propagation member is longer than a maximum length of extension due to the elastic body of the terminal member.

Abstract: A wavelength selective optical switch according to the present invention detects wavelengths of signal lights input to a signal light input port in a main body portion which performs the switching of optical paths for each wavelength by an angular control of a plurality of mirrors, and also, monitors the intensity of a monitor light which is generated in an internal light source and is given from a monitor light input port disposed in the main body portion to be led to a monitor light output port, to feedback control a reflecting surface angle of the mirror corresponding to the wavelength of the signal light which is not input to the signal light input port, so that the output intensity of the monitor light becomes maximum. As a result, it is possible to reliably control the reflective surface angle of the mirror corresponding to the wavelength of the signal light which is not input, and therefore, the crosstalk doe not occur even when the signal light is newly input.

Abstract: The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof.

Abstract: A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.

Abstract: A spectroscopic apparatus which is compact in size and performs high-precision light-splitting with a large angular dispersion. An optical input-processing section outputs a filtered transmitted light, using a bandpass filter that transmits only wavelength bands at one period of an input light, and collects the filtered transmitted light to generate a collected beam. An optic includes a first reflection surface and a second reflection surface which are high but asymmetric in reflectivity, and causes the collected beam incident thereon to undergo multiple reflections within an inner region between the first reflection surface and the second reflection surface, to thereby cause split beams to be emitted via the second reflection surface. A received light-processing section performs received light processing of the beams emitted from the optic. A control section variably controls at least one of a filter characteristic of the bandpass filter and an optical length through the optic.

Abstract: In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 ?sec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.

Abstract: The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

Abstract: The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, comprising the steps of: providing a seed crystal having a tip end with a sharp-pointed shape or a truncation thereof in which an angle of the tip end is 28° or less; keeping the tip end of the seed crystal at just above a silicon melt to heat it before bringing the tip end of the seed crystal into contact with the silicon melt; bringing the tip end of the seed crystal into contact with the silicon melt and immersing the seed crystal into the silicon melt to a desired diameter; and shifting to pull the single crystal, wherein a temperature variation at a surface of the silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of the seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal.

Abstract: A dispersion compensator comprising a VIPA is configured so as to reflect light with each wavelength at an angle varying depending on wavelength when the light is reflected off a mirror. When being coupled at the end of an input fiber, the light with each wavelength is coupled at a specific angle. If the light is coupled with the fiber at a specific angle, coupling efficiency degrades. Therefore, in this case, coupling loss increases. Light having a wavelength with high transmittance in the VIPA is coupled with the fiber at a large angle, while light with a low transmittance is efficiently coupled with the fiber at a small angle or no angle. In this way, the round-top wavelength characteristic of the VIPA can be leveled.

Abstract: The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, wherein a temperature variation at a surface of a silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of a seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of <110>.

Abstract: The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions including a diameter of the straight body of the single crystal, a rotation rate of the single crystal during pulling the single crystal, a flow rate of an inert-gas introduced into the chamber, a position of a heater heating the raw material melt and a distance between the melt surface of the raw material melt and a heat insulating member provided in the chamber so as to oppose to the surface of the raw material melt, thereby V/G which is a ratio of the pulling rate V and the temperature gradient G of the crystal is controlled so that a single crystal including a desired defect region