Patents by Inventor Nobuaki Namiki

Nobuaki Namiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8273317
    Abstract: An method for manufacturing a high purity polycrystalline silicon is characterized by comprising: supplying a silicon chloride gas from a silicon chloride gas supply nozzle and a zinc gas from a zinc gas supply nozzle into a vertical reactor, and generating downward a polycrystalline silicon agglomerated in an almost tube shape on the leading end part of the silicon chloride gas supply nozzle by the reaction of the silicon chloride gas and the zinc gas.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: September 25, 2012
    Assignee: JNC Corporation
    Inventor: Nobuaki Namiki
  • Publication number: 20100284886
    Abstract: An method for manufacturing a high purity polycrystalline silicon is characterized by comprising: supplying a silicon chloride gas from a silicon chloride gas supply nozzle and a zinc gas from a zinc gas supply nozzle into a vertical reactor, and generating downward a polycrystalline silicon agglomerated in an almost tube shape on the leading end part of the silicon chloride gas supply nozzle by the reaction of the silicon chloride gas and the zinc gas.
    Type: Application
    Filed: July 22, 2010
    Publication date: November 11, 2010
    Applicant: CHISSO CORPORATION
    Inventor: NOBUAKI NAMIKI
  • Patent number: 7785546
    Abstract: An apparatus for manufacturing high purity polycrystalline silicon comprises a vertical reactor, a vaporizer and a fusing evaporator for supplying gaseous silicon chloride and zinc, respectively. The fusing evaporator further comprises a zinc evaporator, a main vertical cylinder part connected to the upper part of the zinc evaporator, a solid trapping pipe inserted in the main vertical cylinder part, a zinc introducing pipe connected to the solid trapping pipe at an angle, a seal pot surrounding the lower portion of the solid trapping pipe, an induction heater surrounding the main vertical cylinder part, and a gas vent pipe connected to the side wall of the zinc evaporator.
    Type: Grant
    Filed: March 17, 2008
    Date of Patent: August 31, 2010
    Assignee: Chisso Corporation
    Inventor: Nobuaki Namiki
  • Publication number: 20080233037
    Abstract: An apparatus for manufacturing a high purity polycrystalline silicon is characterized by comprising: a vaporizer 8 of silicon chloride; a fusing evaporator 5 of zinc; a vertical reactor 1 provided with a heating means on the peripheral face thereof; a silicon chloride gas supply nozzle 2 disposed to connect the vaporizer 8 of silicon chloride and the vertical reactor 1 and for supplying a silicon chloride gas supplied from the vaporizer 8 of silicon chloride into the vertical reactor 1; a zinc gas supply nozzle 3 disposed to connect the fusing evaporator 5 of zinc and the vertical reactor 1 and for supplying a zinc gas supplied from the fusing evaporator 5 of zinc into the vertical reactor 1; and an exhaust gas vent pipe 4 connected to the vertical reactor 1, the fusing evaporator 5 of zinc, further comprising: a zinc evaporator 24; a main vertical cylinder part 28 connected to the upper part of the zinc evaporator 24; a solid trapping pipe 32 inserted into the main vertical cylinder part 28; a zinc introduci
    Type: Application
    Filed: March 17, 2008
    Publication date: September 25, 2008
    Applicant: CHISSO CORPORATION
    Inventor: Nobuaki Namiki