Abstract: A mutant of a potentially therapeutic anti-CD40 antibody is provided which mutant has reduced ADCC and CDC activities designed to be optimized as a pharmaceutical agent. A mutant of an agonistic anti-CD40 antibody, comprising mutation and/or substitution of at least one amino acid in the constant region to reduce the ADCC and/or CDC activities therein, and a mutant of an antagonistic anti-CD40 antibody, comprising at least one mutation or substitution in the constant region to reduce the ADCC and/or CDC activities therein, both mutants having at least a hinge region derived from a human IgG2.

Abstract: In the present invention, a honeycomb structure includes a joined honeycomb segment body in which a plurality of honeycomb segments are integrally joined by mutual joining surfaces via a joining material layer, and has a configuration in which a plurality of cells to become through channels of a fluid are arranged in parallel with one another along a central axis direction. The joining material layer contains, as aggregates, inorganic particles, and acicular crystal particles having a shot content ratio smaller than 10 mass %, and the acicular crystal particles include 80 mass % or more of acicular crystal particles having an average length of 20 to 500 ?m in a long axis direction of the acicular crystal particles. As the inorganic particles, silicon carbide, cordierite, alumina, zirconia, yttria or the like can be used, and as natural acicular minerals, sepiolite, wollastonite, palygorskite or the like can be used.

Abstract: Passivation films 3a, 3b are formed to cover both surfaces of semiconductor substrate 1 which comprises terminal pads 2a, 2b on both surfaces. Openings 3c, 3d are provided at positions on passivation films 3a. 3b which match with terminal pads 2a, 2b. Throughholes 9 are formed inside of openings 3c, 3d to extend through terminal pad 2a, semiconductor substrate 1, and terminal pad 2b. Insulating layer 4 made of SiO2, SiN, SiO, or the like is formed on the inner surfaces of throughholes 9. Buffer layer 5 made of a conductive adhesive is formed to cover insulating layer 4 and terminal pads 2a, 2b in openings 3c, 3d. Further, conductive layer 6 made of a metal film is formed on buffer layer 5 by electrolytic plating, non-electrolytic plating, or the like.

Abstract: There is provided a system including a cluster 11, a cluster 12 and an image server 20. A host 101a constituting the cluster 11 has a root file system 111a used to operate the host 101a in a local disk. The image server 20 has a root file system 221a used to operate the host 101a, and the host 101a virtually constructs a root file system 121a by mounting the root file system 221a. When the root file system 111a is varied, the host 101a synchronizes the root file system 111a with the root file system 121a. The same applies to host 102a constituting the cluster 12.

Abstract: A master device and slave devices are connected with each other through an SDA and an SCL, and at least one of a serial communication data signal communicated through the SDA and a serial communication clock signal communicated through the SCL is latched with use of a noise removal clock signal whose frequency is higher than that of the serial communication clock signal, and is taken in.

Abstract: A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

Abstract: The present invention provides an organic electronic element manufacturing method which provides a low manufacturing cost and excellent performance stability, and specifically an organic electronic element manufacturing method which provides a low manufacturing cost, and minimizes emission unevenness, lowering of emission efficiency and shortening of lifetime due to deterioration of gas barrier property of sealing. The organic electronic element manufacturing method is featured in that it comprises the steps of forming an organic electronic structure composed of a first electrode, at least one organic layer and a second electrode on a flexible substrate, and applying a flexible sealing substrate to the organic electronic structure, followed by heating treatment, wherein a heating temperature, at which the heating treatment is carried out, is less than Tg (glass transition temperature) of the substrate and not less than Tg of the sealing substrate.

Abstract: Provided is a liquid crystal display device (69) including: a liquid crystal display panel unit (49); a backlight unit (59); and a front bezel (BZ1) and a rear bezel (BZ2) for housing the liquid crystal display panel unit and the backlight unit. The liquid crystal display panel unit includes an FPC board (1) which winds around side walls (WL2) and a bottom surface (31) of the rear bezel so as to cover the side walls (WL2) and the bottom surface (31). Outer claw sections (CW1) projecting inward from the side walls (WL1) of the front bezel and inner claw sections (CW2) projecting outward from the side walls of the rear bezel are engaged with each other through openings (HL) provided in the FPC board, thereby integrating the front bezel and the rear bezel.

Abstract: An FPC board (1) is mounted on a front bezel (BZ1) and a rear bezel (BZ2). The outer claw (CW1) of the front bezel (BZ1) and the inner claw (CW2) of the rear bezel (BZ2) are engaged with each other while holding the ground portion (12) of the FPC board (1) therebetween.

Abstract: A method for manufacturing a semiconductor device includes forming a laminated structure of a plurality of metal films on a semiconductor substrate using an electroless plating method. The forming of the metal films includes: performing an electroless plating process including a reduction reaction using a first plating tank; and performing an electroless plating process by only a substitution reaction using a second plating tank. The electroless plating process including the reduction reaction that is performed using the first plating tank is performed in a shading environment, and the electroless plating process performed by only the substitution reaction using the second plating tank is performed in a non-shading environment.

Abstract: A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.

Abstract: A simple manufacturing method for an organic electroluminescent panel in which organic electroluminescent elements are arranged and sealed by a sealing adhesive. The electroluminescent panel has excellent sealing properties and excellent durability as a result of the organic electroluminescent elements being adhered to one another by a heat-curable adhesive. The manufacturing method is for an organic electroluminescent panel in which at least a first electrode, an organic functional layer containing a light-emitting layer, an organic electroluminescent element having a second electrode, and a sealing substrate are bonded together on a substrate by the heat-curable adhesive.

Abstract: The present invention relates to an antibody or an antibody fragment thereof which recognizes an extracellular domain of erbB3 and inhibit EGF-like ligand-dependent phosphorylation of erbB3, a DNA encoding the antibody or the antibody fragment thereof, a method of producing the antibody or the antibody fragment thereof, a therapeutic drug including the antibody or the antibody fragment thereof, and therapeutic application using the antibody or the antibody fragment thereof.

Abstract: A method of manufacturing an organic electroluminescence element having on a belt-formed flexible base material, a first electrode, at least one organic functional layer, and a second electrode, includes continuously forming at least one organic functional layer by coating the same on a first electrode which is formed continuously on the flexible base material in the conveying direction thereof, further forming a second electrode on the organic functional layer, so as to make a plurality of organic electroluminescence element structures in the conveying direction, and then cutting the electroluminescence element structures into individual organic electroluminescence elements so as to manufacture organic electroluminescence elements.

Abstract: In this semiconductor device, the through-hole is formed in the substrate, and is located under the conductive pattern. The insulating layer is located at the bottom surface of the through-hole. The conductive pattern is located on one surface side of the substrate. The opening pattern is formed in the insulating layer which is located between the through-hole and the conductive pattern, where the distance r3 from the circumference of the opening pattern to the central axis of the through-hole is smaller than the distance r1 in the through-hole. By providing the opening pattern, the conductive pattern is exposed at the bottom surface of the through-hole. The bump is located on the back surface side of the substrate, and is formed integrally with the through-electrode.

Abstract: A camera with a built-in projector includes: a camera unit equipped with photographing components including an optical system; and a projector module equipped with a projecting optical system, with an optical axis extending along a longer side of the projector module running substantially parallel to an optical axis of the camera unit extending along a longer side of the camera unit.

Abstract: An input position detection system (1) according to the present invention includes a laser pointer (50) that emits infrared light, and a liquid crystal display device (10) that detects a position of an input from the input pointer (50) by detecting the infrared light. The liquid crystal display device (10) includes optical sensor elements (30), a received light intensity calculation circuit (31), a coordinate extracting circuit (32), a combining and calculating circuit (33), an input signal calculation circuit (35), and the like. The combining and calculating circuit (33) calculates the intensities of received light at respective coordinate positions on the basis of the information obtained by the coordinate extracting circuit (32) and the received light intensity calculation circuit (31).

Abstract: A method of making an UOE steel pipe having excellent deformability and low-temperature toughness includes providing a steel composition with a controlled composition consisting essentially of C: 0.03-0.07%, Si: 0.05-0.50%, Mn: 1.6-2.2%, P: at most 0.020%, S: at most 0.003%, Cu: 0.20-0.60%, Cr: at most 0.10%, Ni: 0.20-0.80%, Nb: 0.005-0.030%, Ti: 0.005-0.030%, N: at most 0.0070%, Al: 0.005-0.060%, and a remainder of Fe and impurities, a hardenability index Pcm of at most 0.22%, Cu+Cr+Ni is 0.4-1.5%, and Nb+Mo+V is at most 0.05%. The pipe has a yield strength in the longitudinal direction of at least 480 MPa, a yield-tensile ratio of at most 85% and a Charpy absorbed energy of the heat affected zone at ?40° C. of at least 40 J.

Abstract: A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

Abstract: The image forming apparatus includes an upstream side chamber arranged further on an upstream side with respect to an ink flowing direction than a head in a circulating path and configured to temporarily store the ejection liquid that should be supplied to the head through the circulating path, a downstream side chamber arranged further on a downstream side than the head and further on the upstream side than the upstream side chamber in the circulating path and configured to temporarily store the ejection liquid collected from the head, and a pressure-difference adjusting mechanism configured to form a first pressure state in which the pressure in the downstream side chamber is lower than the pressure in the upstream side chamber and the head and a second pressure state in which the pressure in the upstream side chamber is lower than the pressure in the downstream side chamber.