Patents by Inventor Nobuaki Terakado

Nobuaki Terakado has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200348578
    Abstract: An optical wavelength converter of one embodiment comprises: a substrate comprised of a crystalline material or an amorphous material; plural first crystal regions each having a radial first polarization-ordered structure; and plural second crystal regions each having a radial second polarization-ordered structure. In the substrate, a first and second regions are defined to be directly adjacent to each other with a virtual axis therebetween when the substrate is viewed from a reference direction orthogonal to the virtual axis. Radial centers of the first polarization-ordered structures located in the first region and radial centers of the second polarization-ordered structures located in the second region are alternately arranged along the virtual axis. The plural first crystal regions partially protrude to the second region. The plural second crystal regions partially protrude to the first region.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Shigehiro NAGANO, Takumi Fujiwara, Yoshihiro Takahashi, Nobuaki Terakado
  • Patent number: 10347893
    Abstract: Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: July 9, 2019
    Assignees: KABUSHIKI KAISHA NIHON MICRONICS, GUALA TECHNOLOGY CO., LTD.
    Inventors: Takuo Kudoh, Kiyoyasu Hiwada, Tatsuo Inoue, Akira Nakazawa, Nobuaki Terakado
  • Patent number: 9859596
    Abstract: The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.
    Type: Grant
    Filed: October 30, 2011
    Date of Patent: January 2, 2018
    Assignees: KABUSHIKI KAISHA NIHON MICRONICS, GUALA TECHNOLOGY CO., LTD.
    Inventors: Takuo Kudoh, Akira Nakazawa, Nobuaki Terakado
  • Patent number: 9799927
    Abstract: A repair apparatus of a sheet type cell is capable of appropriately repairing and detoxifying defects of a sheet type cell having semiconductor characteristics. The repair apparatus repairs a sheet type cell in which a storage layer is sandwiched by layers of a positive electrode and a negative electrode and at least the storage layer has semiconductor characteristics. The repair apparatus applies electrical stimulation between the positive electrode and the negative electrode, measures electrical characteristics of the sheet type cell when the electrical stimulation is applied, and specifies a value of the electrical stimulation by the electrical stimulation source while considering measured electrical characteristics.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: October 24, 2017
    Assignees: KABUSHIKI KAISHA NIHON MICRONICS, GUALA TECHNOLOGY CORPORATION
    Inventors: Kiyoyasu Hiwada, Harutada Dewa, Akira Nakazawa, Nobuaki Terakado
  • Patent number: 9164149
    Abstract: This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.
    Type: Grant
    Filed: October 30, 2011
    Date of Patent: October 20, 2015
    Assignees: Kabushiki Kaisha Nihon Micronics, Guala Technology Co., Ltd.
    Inventors: Harutada Dewa, Kiyoyasu Hiwada, Akira Nakazawa, Nobuaki Terakado
  • Publication number: 20150188113
    Abstract: Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.
    Type: Application
    Filed: April 5, 2013
    Publication date: July 2, 2015
    Inventors: Takuo Kudoh, Kiyoyasu Hiwada, Tatsuo Inoue, Akira Nakazawa, Nobuaki Terakado
  • Publication number: 20150000119
    Abstract: A repair apparatus of a sheet type cell that is capable of appropriately repairing and detoxifying defects of a sheet type cell having semiconductor characteristics is provided. The repair apparatus repairs a sheet type cell in which a storage layer is sandwiched by layers of a positive electrode and a negative electrode and at least the storage layer has semiconductor characteristics. The repair apparatus includes an electrical stimulation source that applies electrical stimulation between the positive electrode and the negative electrode, an electrical characteristic measurement means that measures electrical characteristics of the sheet type cell when the electrical stimulation is applied, and a control means that specifies a value of the electrical stimulation by the electrical stimulation source while considering measured electrical characteristics.
    Type: Application
    Filed: November 14, 2011
    Publication date: January 1, 2015
    Applicants: KABUSHIKI KAISHA NIHON MICRONICS, GUALA TECHNOLOGY CORPORATION
    Inventors: Kiyoyasu Hiwada, Harutada Dewa, Akira Nakazawa, Nobuaki Terakado
  • Publication number: 20140352775
    Abstract: The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.
    Type: Application
    Filed: October 30, 2011
    Publication date: December 4, 2014
    Applicants: GUALA TECHNOLOGY CO., LTD., KABUSHIKI KAISHA NIHON MICRONICS
    Inventors: Takuo Kudoh, Akira Nakazawa, Nobuaki Terakado
  • Publication number: 20140320108
    Abstract: This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.
    Type: Application
    Filed: October 30, 2011
    Publication date: October 30, 2014
    Applicants: GUALA TECHNOLOGY CO., LTD., KABUSHIKI KAISHA NIHON MICRONICS
    Inventors: Harutada Dewa, Kiyoyasu Hiwada, Akira Nakazawa, Nobuaki Terakado