Abstract: A semiconductor device comprises; a MOS transistor formed on a semiconductor layer of an SOI substrate in which the semiconductor layer is formed on a semiconductor substrate with intervention of a buried insulating film, and a contact portion for applying to the semiconductor substrate different bias voltages in an operating state and a standby state of a semiconductor circuit including the MOS transistor.

Abstract: A semiconductor device, comprising: a semiconductor substrate providing a semiconductor element; and a hard film which covers a part or the entirety of a side of the semiconductor substrate and which has top and bottom surfaces in approximately the same planes as those of the top and bottom surfaces of the semiconductor substrate, wherein the side of the semiconductor substrate covered with the hard film is processed so as to be perpendicular or substantially perpendicular to the surface of the semiconductor substrate.

Abstract: A semiconductor device, comprising: a flexible substrate; at least one semiconductor element; at least one electrode for external connection, the element and the electrode being formed on a front surface of the flexible substrate; and at least one wire formed on the front surface to electrically connect the element to the electrode, wherein at least a part of the flexible substrate has a curved form.

Abstract: A semiconductor device comprises; a MOS transistor formed on a semiconductor layer of an SOI substrate in which the semiconductor layer is formed on a semiconductor substrate with intervention of a buried insulating film, and a contact portion for applying to the semiconductor substrate different bias voltages in an operating state and a standby state of a semiconductor circuit including the MOS transistor.

Abstract: A semiconductor device production method is provided, which comprises the steps of: (a) forming an insulative film on an underlying substrate; (b) forming a semiconductor layer on the insulative film; (c) bonding a flexible substrate onto the semiconductor layer; and (d) separating the semiconductor layer on the flexible substrate from the insulative film on the underlying substrate.

Abstract: A semiconductor device comprising a semiconductor layer and one, or a plurality of, semiconductor elements formed on a surface of the semiconductor layer, characterized in that said semiconductor layer is divided into a plurality of pieces in a region wherein said semiconductor layer does not have a semiconductor element and in that the respective pieces of the divided semiconductor layer have a flexible region made of an insulating layer adhered to the sides of the respective pieces so that the pieces are integrated.

Abstract: A semiconductor device, comprising:

Abstract: A semiconductor device production method is provided, which comprises the steps of: (a) forming an insulative film on an underlying substrate; (b) forming a semiconductor layer on the insulative film; (c) bonding a flexible substrate onto the semiconductor layer; and (d) separating the semiconductor layer on the flexible substrate from the insulative film on the underlying substrate.

Abstract: A semiconductor device comprising a semiconductor layer and one, or a plurality of, semiconductor elements formed on a surface of the semiconductor layer, characterized in that said semiconductor layer is divided into a plurality of pieces in a region wherein said semiconductor layer does not have a semiconductor element and in that the respective pieces of the divided semiconductor layer have a flexible region made of an insulating layer adhered to the sides of the respective pieces so that the pieces are integrated.

Abstract: A semiconductor device fabrication process comprising the steps of: (a) forming a dummy gate pattern on a semiconductor substrate with the intervention of a gate insulating film; (b) forming a sidewall insulating film on a side wall of the dummy gate pattern; (c) forming a film of the same material as a material for the dummy gate pattern at least in a contact plug formation region on the semiconductor substrate; (d) forming an interlayer insulating film around the same material film on the emiconductor substrate; (e) removing the dummy gate pattern and the same material film located in the contact plug formation region to form trenches in the interlayer insulating film; and (f filling the trenches with an electrically conductive material to form a gate electrode and a contact plug.

Abstract: A method of manufacturing a semiconductor device comprises the steps of: (a) forming a first oxide film and a first silicon nitride film on a surface semiconductor layer of an SOI substrate, the SOI substrate comprising the surface semiconductor layer formed on a support substrate with the intervention of a buried insulating film; (b) patterning the first silicon nitride film into a desired shape and performing a first LOCOS oxidization using the thus patterned first silicon nitride film as a mask to form a first LOCOS oxide film in a region for device isolation in the surface semiconductor layer; (c) selectively removing the first LOCOS oxide film, (d) forming sidewall spacers of a second silicon nitride film on sidewalls of the first silicon nitride film and the first oxide film; (e) performing a second LOCOS oxidization using the first silicon nitride film and the sidewall spacers as a mask to form a second LOCOS oxide film which is thinner than the first LOCOS oxide film; and (f) removing the first and se

Abstract: First, oxygen ions of a high concentration are implanted into a silicon substrate 1, by which a high-concentration oxygen implanted layer 3 is formed. Subsequently, a heat treatment for about 4 hours at 1350.degree. C. is carried out in an atmosphere of Ar with a 0.5% concentration oxygen for the formation of a buried oxide layer 5. Next, pulse laser annealing is performed for melting and recrystallization of the surface silicon layer. Pulsed laser beam is radiated at an energy density of 1200 mJ/cm.sup.2 or more. The pulsed laser beam is able to melt the semiconductor surface in several 10's nsec by virtue of its extremely large power density in irradiation of 10.sup.7 W/cm.sup.2. By iterating this pulse laser annealing, the surface silicon layer iterates to melt and recrystallize, activating the activities of crystal defects, by which damage recovery based on crystal seeds is accomplished.