Patents by Inventor Nobuei Ito
Nobuei Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5496582Abstract: A process for producing an electroluminescent device comprising a luminescent layer located between two electrodes formed on an insulating substrate wherein the luminescent layer is composed of a host material to which a luminescent center element is added and the host material is composed of an alkaline earth metal element of the Group II of the Periodic Table and an element of the Group VI, which process comprises forming the host material by chemical vapor deposition to react a gas of an organic compound containing the alkaline earth metal element of the Group II and a gas of a compound containing the element of the Group VI in a reactor, the gas of the organic compound containing the alkaline earth metal element of the Group II being formed from a cyclopentadienyl compound. By this process, EL devices can be produced with high reproducibility.Type: GrantFiled: August 30, 1994Date of Patent: March 5, 1996Assignee: Nippondenso Co., Ltd.Inventors: Atsushi Mizutani, Masayuki Katayama, Nobuei Ito, Tadashi Hattori
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Patent number: 5470618Abstract: A zinc oxide-based transparent conductive film containing of gallium or indium and having a resistivity of not more than 10.sup.-3 .OMEGA..cm is provided by evaporating a source of zinc oxide containing 0.5 to 5% by weight of gallium oxide or 0.3 to 4.5% by weight of indium oxide and depositing same onto a substrate after activating the vapor of the source by a plasma.Type: GrantFiled: July 14, 1994Date of Patent: November 28, 1995Assignee: Nippon Soken, Inc.Inventors: Fumio Ohara, Tadashi Hattori, Nobuei Ito, Yutaka Hattori, Masumi Arai
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Patent number: 5369333Abstract: A thin film EL display element that excels in luminous efficiency, is stable, and has a superior service life, is provided. The thin film EL display element comprises a lower electrode, a first insulating film, a luminescent film, a second insulating layer, and an upper electrode formed on an insulating base substrate in this order; the second insulating layer comprises a thin film that is adjacent to the luminescent layer. The thin film comprises a sulfide or a selenide that does not form any sulfate or selenate.Type: GrantFiled: September 29, 1992Date of Patent: November 29, 1994Assignees: Nippondenso Co., Ltd., Research Development Corporation of JapanInventors: Kazuhiro Inoguchi, Masayuki Suzuki, Nobuei Ito, Tadashi Hattori
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Patent number: 5314540Abstract: Apparatus and process for synthesizing a diamond film of high purity at a high rate. Mixture gas of hydrocarbon gas and hydrogen gas is introduced into an arc discharge to produce a gas plasma. This gas plasma is blown against a substrate to deposit diamond. A plasma current power supply is connected with a third electrode disposed above the substrate to place the third electrode at a positive potential. An electrical current is supplied into the gas plasma from the third electrode. Flow of the electrical current through the plasma promotes the decomposition of the hydrogen and hydrocarbon. A diamond film of high purity can be deposited at a high rate. The invention is characterized in that the substrate is placed at a lower potential than the third electrode or the direction of the electrical current intersects the flow of the gas plasma although the electrical current is passed through the plasma. Therefore, it is unlikely that the accelerated electrons reach the substrate, elevating its temperature.Type: GrantFiled: March 23, 1992Date of Patent: May 24, 1994Assignee: Nippondenso Co., Ltd.Inventors: Satoshi Nakamura, Minoru Yamamoto, Nobuei Ito, Tadasi Hattori
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Patent number: 5099788Abstract: A method and apparatus for forming a diamond film, has a casing in which vacuum is maintained at a predetermined value. A substrate is disposed within the casing so that the diamond film is formed thereon. A gas plasma generator for generating a gas plasma near the substrate from a plasma source gas and a carbon source gas by an arc discharge is provided within the casing. A detector detects a factor which is related to a change in a surface temperature of the diamond film, and an electronic controller controls in response to the detected factor the surface temperature of the diamond film so as to maintain such temperature near a predetermined optimal value for forming the diamond film. As the surface temperature is maintained near the optimal value by a feedback control, high purity diamond film is obtained irrespective of the thickness or the forming time thereof.Type: GrantFiled: July 3, 1990Date of Patent: March 31, 1992Assignee: Nippon Soken, Inc.Inventors: Nobuei Ito, Minoru Yamamoto, Satoshi Nakamura, Tadashi Hattori
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Patent number: 5094878Abstract: A device for synthesizing a diamond at a high synthesis speed and obtaining an improved purity of diamond is provided, and is characterized by having a vacuum vessel maintained under a predetermined vacuum; a positive electrode and a negative electrode arranged within the vacuum vessel so as to be opposed to each other; an arc discharge power source electrically connected to the positive electrode and the negative electrode and applying a predetermined power to cause an arc discharge in a space between the positive electrode and the negative electrode; a gas supply source which generates a gas plasma by flowing a plasma source gas over the arc discharge, and blowing a resulting gas plasma containing a carbon source gas over a substrate arranged downstream thereof; an electrical field application power source for applying an electrical field between an area at which the gas plasma is generated and the substrate, to give the substrate a higher potential and thereby provide a flow of a predetermined amount of cuType: GrantFiled: June 19, 1990Date of Patent: March 10, 1992Assignee: Nippon Soken, Inc.Inventors: Minoru Yamamoto, Satoshi Nakamura, Nobuei Ito, Tadashi Hattori
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Patent number: 5086210Abstract: An electrically conductive ceramic material containing at least 20 wt % of Mo.sub.5 Si.sub.3 C and having a resistance-temperature coefficient no greater than 5.times.10.sup.-4 deg.sup.-1 is used to make the heating element of a self-controlling type glow plug having a resistor with a larger temperature-resistance coefficient, such as iron or nickel, connected in series to the heating element for controlling the supply of electric current to the heating element. The ceramic material is made by firing a ceramic powder mixture of Mo and Si mixed with carbon black.Type: GrantFiled: March 28, 1989Date of Patent: February 4, 1992Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.Inventors: Naochika Nunogaki, Tetuo Toyama, Nobuei Ito
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Patent number: 4851254Abstract: A device for forming a diamond film has a casing in which a vacuum is maintained to 50 Torr: a positive electrode and a negative electrode are disposed within the casing so that ends of the positive electrode and the negative electrode are opposed to each other through a space: a substrate is disposed near the space between the electrodes, a gas inlet pipe supplies a mixture gas of hydrogen, argon and methane to the space between the electrodes and an arc power supply is connected to the electrodes for supplying a predetermined arc output power thereacross to form an arc discharge column in the space therebetween. By supplying the mixture gas to the arc discharge column of which the temperature is extremely high, the mixture gas is decomposed at a high rate, and a diamond film of high purity grows on the substrate at a high speed.Type: GrantFiled: January 11, 1988Date of Patent: July 25, 1989Assignee: Nippon Soken, Inc.Inventors: Minoru Yamamoto, Nobuei Ito, Hiroshi Uesugi, Tadashi Hattori
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Patent number: 4814581Abstract: An electrically insulating ceramic sintered body suitably used in a ceramic glow plug, for example, is formed by firing a mixed powder of 75 to 95 vol % of a basic material, 25 to 5 vol % of an additive and a sintering aid. The basic material is composed of at least one material selected from the group consisting of silicon nitride, aluminum nitride, and .beta.-sialon. The additive is composed of at least one material selected from the group consisting of silicide, carbide, nitride, and boride of metal, the additive having a thermal expansion coefficient larger than that of the basic material. And the sintering aid is composed of one of alumina in an amount of 3 to 50 wt % of the total amount of the basic material and the additive, and spinel in an amount of 2 to 15 wt % of the total amount of the basic material and the additive.Type: GrantFiled: October 9, 1987Date of Patent: March 21, 1989Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.Inventors: Naochika Nunogaki, Tetsuo Toyama, Nobuei Ito, Kazuhiro Inoguchi
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Patent number: 4556780Abstract: A ceramic heater comprises a heat generator made of a conductive ceramic sintered body, a supporter made of an insulating ceramic sintered body for supporting the heat generator, and a metallic wire for supplying an electric current from an electrode to the heat generator. The heat generator is integrally covered with an unporous covering layer made of an insulating ceramic sintered body. The covering layer prevents the heat generator from being directly exposed to oil and water. The covering layer is made of, for example Si.sub.3 N.sub.4 or glass containing SiO.sub.2 as a main constituent into a thickness of not more than 1mm.Type: GrantFiled: October 11, 1984Date of Patent: December 3, 1985Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.Inventors: Morihiro Atsumi, Hitoshi Yoshida, Nobuei Ito, Kinya Atsumi
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Patent number: 4499366Abstract: A ceramic heater device has a housing section and a heating section. The heating section includes a sintered ceramic insulator attached to a metal housing and a U-shaped sintered ceramic heater body fixed to the insulator, so that the heater body is supported by the housing section by means of the insulator in order to avoid a direct connection between the metal housing and the heater body. As a result, heat generated at the heater body may not be transferred to the metal housing, and thereby the heat can be effectively used to ignite a mixture of air and fuel in an engine and a rigid and stable support of the heater body to the metal housing can be obtained.Type: GrantFiled: November 21, 1983Date of Patent: February 12, 1985Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.Inventors: Hitoshi Yoshida, Morihiro Atsumi, Nobuei Ito, Kinya Atsumi
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Patent number: 4088608Abstract: A catalyst for reforming hydrocarbon fuels into a hydrogen-rich reformed gas comprising an active carrier consisting of magnesium aluminate of spinel structure as represented by the formulaMgAl.sub.2 O.sub.4and at least one catalyst metal selected from the group consisting of platinum, rhodium and a mixture thereof supported by said carrier.Type: GrantFiled: November 26, 1976Date of Patent: May 9, 1978Assignee: Nippon Soken, Inc.Inventors: Masao Tanaka, Makoto Takemura, Nobuei Ito