Patents by Inventor Nobuei Ito

Nobuei Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5496582
    Abstract: A process for producing an electroluminescent device comprising a luminescent layer located between two electrodes formed on an insulating substrate wherein the luminescent layer is composed of a host material to which a luminescent center element is added and the host material is composed of an alkaline earth metal element of the Group II of the Periodic Table and an element of the Group VI, which process comprises forming the host material by chemical vapor deposition to react a gas of an organic compound containing the alkaline earth metal element of the Group II and a gas of a compound containing the element of the Group VI in a reactor, the gas of the organic compound containing the alkaline earth metal element of the Group II being formed from a cyclopentadienyl compound. By this process, EL devices can be produced with high reproducibility.
    Type: Grant
    Filed: August 30, 1994
    Date of Patent: March 5, 1996
    Assignee: Nippondenso Co., Ltd.
    Inventors: Atsushi Mizutani, Masayuki Katayama, Nobuei Ito, Tadashi Hattori
  • Patent number: 5470618
    Abstract: A zinc oxide-based transparent conductive film containing of gallium or indium and having a resistivity of not more than 10.sup.-3 .OMEGA..cm is provided by evaporating a source of zinc oxide containing 0.5 to 5% by weight of gallium oxide or 0.3 to 4.5% by weight of indium oxide and depositing same onto a substrate after activating the vapor of the source by a plasma.
    Type: Grant
    Filed: July 14, 1994
    Date of Patent: November 28, 1995
    Assignee: Nippon Soken, Inc.
    Inventors: Fumio Ohara, Tadashi Hattori, Nobuei Ito, Yutaka Hattori, Masumi Arai
  • Patent number: 5369333
    Abstract: A thin film EL display element that excels in luminous efficiency, is stable, and has a superior service life, is provided. The thin film EL display element comprises a lower electrode, a first insulating film, a luminescent film, a second insulating layer, and an upper electrode formed on an insulating base substrate in this order; the second insulating layer comprises a thin film that is adjacent to the luminescent layer. The thin film comprises a sulfide or a selenide that does not form any sulfate or selenate.
    Type: Grant
    Filed: September 29, 1992
    Date of Patent: November 29, 1994
    Assignees: Nippondenso Co., Ltd., Research Development Corporation of Japan
    Inventors: Kazuhiro Inoguchi, Masayuki Suzuki, Nobuei Ito, Tadashi Hattori
  • Patent number: 5314540
    Abstract: Apparatus and process for synthesizing a diamond film of high purity at a high rate. Mixture gas of hydrocarbon gas and hydrogen gas is introduced into an arc discharge to produce a gas plasma. This gas plasma is blown against a substrate to deposit diamond. A plasma current power supply is connected with a third electrode disposed above the substrate to place the third electrode at a positive potential. An electrical current is supplied into the gas plasma from the third electrode. Flow of the electrical current through the plasma promotes the decomposition of the hydrogen and hydrocarbon. A diamond film of high purity can be deposited at a high rate. The invention is characterized in that the substrate is placed at a lower potential than the third electrode or the direction of the electrical current intersects the flow of the gas plasma although the electrical current is passed through the plasma. Therefore, it is unlikely that the accelerated electrons reach the substrate, elevating its temperature.
    Type: Grant
    Filed: March 23, 1992
    Date of Patent: May 24, 1994
    Assignee: Nippondenso Co., Ltd.
    Inventors: Satoshi Nakamura, Minoru Yamamoto, Nobuei Ito, Tadasi Hattori
  • Patent number: 5099788
    Abstract: A method and apparatus for forming a diamond film, has a casing in which vacuum is maintained at a predetermined value. A substrate is disposed within the casing so that the diamond film is formed thereon. A gas plasma generator for generating a gas plasma near the substrate from a plasma source gas and a carbon source gas by an arc discharge is provided within the casing. A detector detects a factor which is related to a change in a surface temperature of the diamond film, and an electronic controller controls in response to the detected factor the surface temperature of the diamond film so as to maintain such temperature near a predetermined optimal value for forming the diamond film. As the surface temperature is maintained near the optimal value by a feedback control, high purity diamond film is obtained irrespective of the thickness or the forming time thereof.
    Type: Grant
    Filed: July 3, 1990
    Date of Patent: March 31, 1992
    Assignee: Nippon Soken, Inc.
    Inventors: Nobuei Ito, Minoru Yamamoto, Satoshi Nakamura, Tadashi Hattori
  • Patent number: 5094878
    Abstract: A device for synthesizing a diamond at a high synthesis speed and obtaining an improved purity of diamond is provided, and is characterized by having a vacuum vessel maintained under a predetermined vacuum; a positive electrode and a negative electrode arranged within the vacuum vessel so as to be opposed to each other; an arc discharge power source electrically connected to the positive electrode and the negative electrode and applying a predetermined power to cause an arc discharge in a space between the positive electrode and the negative electrode; a gas supply source which generates a gas plasma by flowing a plasma source gas over the arc discharge, and blowing a resulting gas plasma containing a carbon source gas over a substrate arranged downstream thereof; an electrical field application power source for applying an electrical field between an area at which the gas plasma is generated and the substrate, to give the substrate a higher potential and thereby provide a flow of a predetermined amount of cu
    Type: Grant
    Filed: June 19, 1990
    Date of Patent: March 10, 1992
    Assignee: Nippon Soken, Inc.
    Inventors: Minoru Yamamoto, Satoshi Nakamura, Nobuei Ito, Tadashi Hattori
  • Patent number: 5086210
    Abstract: An electrically conductive ceramic material containing at least 20 wt % of Mo.sub.5 Si.sub.3 C and having a resistance-temperature coefficient no greater than 5.times.10.sup.-4 deg.sup.-1 is used to make the heating element of a self-controlling type glow plug having a resistor with a larger temperature-resistance coefficient, such as iron or nickel, connected in series to the heating element for controlling the supply of electric current to the heating element. The ceramic material is made by firing a ceramic powder mixture of Mo and Si mixed with carbon black.
    Type: Grant
    Filed: March 28, 1989
    Date of Patent: February 4, 1992
    Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.
    Inventors: Naochika Nunogaki, Tetuo Toyama, Nobuei Ito
  • Patent number: 4851254
    Abstract: A device for forming a diamond film has a casing in which a vacuum is maintained to 50 Torr: a positive electrode and a negative electrode are disposed within the casing so that ends of the positive electrode and the negative electrode are opposed to each other through a space: a substrate is disposed near the space between the electrodes, a gas inlet pipe supplies a mixture gas of hydrogen, argon and methane to the space between the electrodes and an arc power supply is connected to the electrodes for supplying a predetermined arc output power thereacross to form an arc discharge column in the space therebetween. By supplying the mixture gas to the arc discharge column of which the temperature is extremely high, the mixture gas is decomposed at a high rate, and a diamond film of high purity grows on the substrate at a high speed.
    Type: Grant
    Filed: January 11, 1988
    Date of Patent: July 25, 1989
    Assignee: Nippon Soken, Inc.
    Inventors: Minoru Yamamoto, Nobuei Ito, Hiroshi Uesugi, Tadashi Hattori
  • Patent number: 4814581
    Abstract: An electrically insulating ceramic sintered body suitably used in a ceramic glow plug, for example, is formed by firing a mixed powder of 75 to 95 vol % of a basic material, 25 to 5 vol % of an additive and a sintering aid. The basic material is composed of at least one material selected from the group consisting of silicon nitride, aluminum nitride, and .beta.-sialon. The additive is composed of at least one material selected from the group consisting of silicide, carbide, nitride, and boride of metal, the additive having a thermal expansion coefficient larger than that of the basic material. And the sintering aid is composed of one of alumina in an amount of 3 to 50 wt % of the total amount of the basic material and the additive, and spinel in an amount of 2 to 15 wt % of the total amount of the basic material and the additive.
    Type: Grant
    Filed: October 9, 1987
    Date of Patent: March 21, 1989
    Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.
    Inventors: Naochika Nunogaki, Tetsuo Toyama, Nobuei Ito, Kazuhiro Inoguchi
  • Patent number: 4556780
    Abstract: A ceramic heater comprises a heat generator made of a conductive ceramic sintered body, a supporter made of an insulating ceramic sintered body for supporting the heat generator, and a metallic wire for supplying an electric current from an electrode to the heat generator. The heat generator is integrally covered with an unporous covering layer made of an insulating ceramic sintered body. The covering layer prevents the heat generator from being directly exposed to oil and water. The covering layer is made of, for example Si.sub.3 N.sub.4 or glass containing SiO.sub.2 as a main constituent into a thickness of not more than 1mm.
    Type: Grant
    Filed: October 11, 1984
    Date of Patent: December 3, 1985
    Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.
    Inventors: Morihiro Atsumi, Hitoshi Yoshida, Nobuei Ito, Kinya Atsumi
  • Patent number: 4499366
    Abstract: A ceramic heater device has a housing section and a heating section. The heating section includes a sintered ceramic insulator attached to a metal housing and a U-shaped sintered ceramic heater body fixed to the insulator, so that the heater body is supported by the housing section by means of the insulator in order to avoid a direct connection between the metal housing and the heater body. As a result, heat generated at the heater body may not be transferred to the metal housing, and thereby the heat can be effectively used to ignite a mixture of air and fuel in an engine and a rigid and stable support of the heater body to the metal housing can be obtained.
    Type: Grant
    Filed: November 21, 1983
    Date of Patent: February 12, 1985
    Assignees: Nippondenso Co., Ltd., Nippon Soken, Inc.
    Inventors: Hitoshi Yoshida, Morihiro Atsumi, Nobuei Ito, Kinya Atsumi
  • Patent number: 4088608
    Abstract: A catalyst for reforming hydrocarbon fuels into a hydrogen-rich reformed gas comprising an active carrier consisting of magnesium aluminate of spinel structure as represented by the formulaMgAl.sub.2 O.sub.4and at least one catalyst metal selected from the group consisting of platinum, rhodium and a mixture thereof supported by said carrier.
    Type: Grant
    Filed: November 26, 1976
    Date of Patent: May 9, 1978
    Assignee: Nippon Soken, Inc.
    Inventors: Masao Tanaka, Makoto Takemura, Nobuei Ito