Patents by Inventor Nobufumi MATSUO
Nobufumi MATSUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11979140Abstract: A method of forming a film bulk acoustic wave resonator comprises depositing a bottom electrode on an upper surface of a layer of dielectric material disposed over a cavity defined between the layer of dielectric material and a substrate, depositing a seed layer of piezoelectric material on an upper surface of the bottom electrode, etching one or more openings through the seed layer of piezoelectric material, etching of the one or more openings including over-etching of the seed layer in an amount sufficient to damage portions of the upper surface of the bottom electrode exposed by etching of the one or more openings, and depositing a bulk film of the piezoelectric material on an upper surface of the seed layer, on a portion of the upper surface of bottom electrode including the damaged portions, and on a portion of the upper surface of the dielectric layer.Type: GrantFiled: April 25, 2023Date of Patent: May 7, 2024Assignee: SKYWORKS GLOBAL PTE. LTD.Inventors: Nobufumi Matsuo, Kwang Jae Shin
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Patent number: 11744155Abstract: A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.Type: GrantFiled: February 15, 2022Date of Patent: August 29, 2023Assignee: ROHM CO., LTD.Inventors: Koji Nomura, Nobufumi Matsuo, Tomohiro Date
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Publication number: 20230261637Abstract: A method of forming a film bulk acoustic wave resonator comprises depositing a bottom electrode on an upper surface of a layer of dielectric material disposed over a cavity defined between the layer of dielectric material and a substrate, depositing a seed layer of piezoelectric material on an upper surface of the bottom electrode, etching one or more openings through the seed layer of piezoelectric material, etching of the one or more openings including over-etching of the seed layer in an amount sufficient to damage portions of the upper surface of the bottom electrode exposed by etching of the one or more openings, and depositing a bulk film of the piezoelectric material on an upper surface of the seed layer, on a portion of the upper surface of bottom electrode including the damaged portions, and on a portion of the upper surface of the dielectric layer.Type: ApplicationFiled: April 25, 2023Publication date: August 17, 2023Inventors: Nobufumi Matsuo, Kwang Jae Shin
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Patent number: 11671074Abstract: A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation, and in recessed frame regions disposed laterally on opposite sides of the central region. The piezoelectric film disposed in the recessed frame regions includes a greater concentration of defects than a concentration of defects in the piezoelectric film disposed in the central region.Type: GrantFiled: September 12, 2019Date of Patent: June 6, 2023Assignee: SKYWORKS GLOBAL PTE. LTD.Inventors: Nobufumi Matsuo, Kwang Jae Shin
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Publication number: 20230098495Abstract: According to the present disclosure, a passband filter is provided. The passband filter comprises a first connection, a second connection, and a third connection. One or more resonators of a first type are provided connected in series between the first connection and the second connection; and one or more resonators of a second type are provided connected from between the first connection and the second connection to the third connection. A radio-frequency front end module and wireless mobile device are also provided.Type: ApplicationFiled: September 23, 2022Publication date: March 30, 2023Inventors: Kwang Jae Shin, Alexandre Augusto Shirakawa, Yiliu Wang, Tetsuya Tsurunari, Nobufumi Matsuo
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Patent number: 11431315Abstract: A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation and in recessed frame regions disposed laterally on opposite sides of the central region, and an electrode disposed on an upper surface of the piezoelectric film, the electrode having a lesser thickness in the recessed frame regions than the thickness of the electrode in the central region to increase a quality factor of the FBAR.Type: GrantFiled: August 26, 2020Date of Patent: August 30, 2022Assignee: SKYWORKS SOLUTIONS, INC.Inventor: Nobufumi Matsuo
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Publication number: 20220173302Abstract: A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.Type: ApplicationFiled: February 15, 2022Publication date: June 2, 2022Inventors: Koji NOMURA, Nobufumi MATSUO, Tomohiro DATE
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Patent number: 11289642Abstract: A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.Type: GrantFiled: September 5, 2018Date of Patent: March 29, 2022Assignee: ROHM CO., LTD.Inventors: Koji Nomura, Nobufumi Matsuo, Tomohiro Date
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Patent number: 11159142Abstract: A film bulk acoustic wave resonator includes a piezoelectric film disposed over a cavity. The cavity is shaped as partial ellipse including first, second, and third vertices. The film bulk acoustic wave resonator further includes three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.Type: GrantFiled: September 12, 2019Date of Patent: October 26, 2021Assignee: SKYWORKS SOLUTIONS, INC.Inventor: Nobufumi Matsuo
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Publication number: 20210075391Abstract: A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation and in recessed frame regions disposed laterally on opposite sides of the central region, and an electrode disposed on an upper surface of the piezoelectric film, the electrode having a lesser thickness in the recessed frame regions than the thickness of the electrode in the central region to increase a quality factor of the FBAR.Type: ApplicationFiled: August 26, 2020Publication date: March 11, 2021Inventor: Nobufumi Matsuo
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Publication number: 20200091886Abstract: A film bulk acoustic wave resonator includes a piezoelectric film disposed over a cavity. The cavity is shaped as partial ellipse including first, second, and third vertices. The film bulk acoustic wave resonator further includes three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.Type: ApplicationFiled: September 12, 2019Publication date: March 19, 2020Inventor: Nobufumi Matsuo
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Publication number: 20200083861Abstract: A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation, and in recessed frame regions disposed laterally on opposite sides of the central region. The piezoelectric film disposed in the recessed frame regions includes a greater concentration of defects than a concentration of defects in the piezoelectric film disposed in the central region.Type: ApplicationFiled: September 12, 2019Publication date: March 12, 2020Inventors: Nobufumi Matsuo, Kwang Jae Shin
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Patent number: 10500857Abstract: There is provided a nozzle substrate including a nozzle hole penetrating in a thickness direction. The nozzle substrate includes a main substrate including a first surface and a second surface, an oxidation film formed on the second surface of the main substrate, and a water repellent film formed on a surface at an opposite side to the main substrate side of the oxidation film. The nozzle hole includes a first through hole penetrating the main substrate in a thickness direction, a second through hole penetrating the oxidation film and being connected to the first through hole, and a third through hole penetrating the water repellent film and being connected to the second through hole. An inner circumference surface of the second through hole and an inner circumference surface of the third through hole are approximately flush.Type: GrantFiled: November 1, 2017Date of Patent: December 10, 2019Assignee: ROHM CO., LTD.Inventor: Nobufumi Matsuo
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Publication number: 20190081230Abstract: A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.Type: ApplicationFiled: September 5, 2018Publication date: March 14, 2019Inventors: Koji NOMURA, Nobufumi MATSUO, Tomohiro DATE
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Publication number: 20180117910Abstract: There is provided a nozzle substrate including a nozzle hole penetrating in a thickness direction. The nozzle substrate includes a main substrate including a first surface and a second surface, an oxidation film formed on the second surface of the main substrate, and a water repellent film formed on a surface at an opposite side to the main substrate side of the oxidation film. The nozzle hole includes a first through hole penetrating the main substrate in a thickness direction, a second through hole penetrating the oxidation film and being connected to the first through hole, and a third through hole penetrating the water repellent film and being connected to the second through hole. An inner circumference surface of the second through hole and an inner circumference surface of the third through hole are approximately flush.Type: ApplicationFiled: November 1, 2017Publication date: May 3, 2018Inventor: Nobufumi MATSUO