Abstract: A new high Tc superconducting compound oxide material represented by the general formula:AuBvCwCuxOyin which"A" is selected from the group consisting of magnesium(Mg), calcium(Ca), strontium(Sr) and barium(Ba);"B" is selected from the group consisting of yttrium(Y), lanthanum(La), and lanthanide elements;"C" is selected from the group consisting of vanadium (V), tantalum(Ta), indium(In), and thallium(Tl), and ##EQU1##

Abstract: An improvement in a process for manufacturing a superconductor, characterized by irradiating a material composed of compound oxide by one of ion beams selected from oxygen ion beam, inert gas ion beams and an ion beam consisting of a mixture of oxygen gas and inert gas to convert said material into a superconductor. When a focused ion beam is directed onto desired areas on said film layer, the areas irradiated by the ion beam are converted to a superconductor in a form of a superconducting circuit.

Abstract: A semiconductor device utilizing a nondoped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer structure reduces reverse leak current.

Abstract: A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.

Abstract: A superconducting material and a process for producing a superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.).sub.x (.alpha.,.beta.).sub.1 -.sub.x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of the IIa group of the periodic table except Ba, and atomic ratio of .gamma. to Ba, being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of the IIIa group of the periodic table but is different from .alpha., an atomic ratio of .beta. to .alpha. being selected in a range between 1 and 90%,".epsilon." represents a metal element of the IIIb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1 respectively, andthe expression of (Ba, .gamma.) and (.alpha.,.beta.) mean that the respective elements occupy predetermined sites in a crystal in a predetermined proportion.

Abstract: A highly pure cubic boron nitride film is formed on a substrate by a method which comprises irradiating an excimer laser on a target comprising boron atoms and optionally nitrogen atom and depositing cubic boron nitride on a substrate which is placed to face the target.

Abstract: A superconducting material and a process for producing a superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.).sub.x (.alpha.,.beta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of the IIa group of the periodic table except Ba, an atomic ratio of .gamma. to Ba, being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of the IIIa group of the periodic table but is different from .alpha., and atomic ratio of .beta. to .alpha. being selected in a range between 1 and 90%,".epsilon." represents a metal element of the IIIb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1 respectively, andthe expression of (Ba, .gamma.) and (.alpha., .beta.) mean that the respective elements occupy predetermined sites in a crystal in a predetermined proportion.

Abstract: As electrodes for the semiconductor diamond, the p.sup.+ or n.sup.+ polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase is formed on the semiconductor diamond, whereby an ohmic contact electrode with low contact resistance can be made.

Abstract: A now superconducting material comprising a compound oxide represented by the general formula:(Sr,.gamma.).sub.x (La,.delta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Sr, an atomic ratio of .gamma. to Sr being selected in a range between 1% and 90%,".delta." represents an element of IIIa group of the periodic except La, an atomic ratio of .delta. to La is selected in a range between 1% and 90%,".epsilon." represents a metal element of Vb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z<1 respectively, andthe expression of (Sr,.gamma.) and (La,.delta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

Abstract: This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.

Abstract: The invention is an aftertreatment of a high Tc compound oxide type superconducting material by oxygen plasma to improve the superconducting property of the material. The treatment oxygen plasma is preferably performed while the material is heated at 400.degree. to 1,050.degree. C.The material may have a form of bulky mass or a thin film deposited on a substrate by physical vapour deposition technique.

Abstract: The present invention relates to a semiconductor element and a method of forming the same and various kinds of article in which said element is used.Any material selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and SiF.sub.4, and GeH.sub.4 or GeF.sub.4, are used as raw material gases. H.sub.2 is used as a diluent gas if necessary. A photochemical gas phase vapor deposition method is used, at a pressure of 0.1 to 20 Torr, an optical intensity of 10 to 1,000 mW/cm.sup.2, and a substrate temperature of 50.degree. to 250.degree. C. A semiconductor element formed of a -SiGe:H film having superior photoelectric conductivity, a method of forming a semiconductor element film containing Ge added thereto and having high long wave length-sensitivity and superior film quality can be provided.

Abstract: A process for preparing a superconducting thin film composed of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as SrTiO.sub.3. Improvement is in that a heat-treatment of the deposited thin film is carried out in a same chamber in which the thin film of compound oxide is deposited on the substrate without taking the substrate out of said chamber.

Abstract: An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of polymer compound such as polyimide, silicon resin or epoxy resin.

Abstract: A method for preparing a thin film of a composite copper oxide superconductor with a deposition source of the compound copper oxide, by applying an oxygen ion beam from an ion source onto a substrate while changing beam intensity during formation of the superconducting thin film, thereby to physically deposit evaporative particles from the deposition source on the substrate.

Abstract: The invention is an after-treatment of a compound oxide type superconducting material by oxygen plasma to improve the superconducting property of the material. The treatment by oxygen plasma is performed while the material is heated at 500.degree. to 1,000.degree. C.The material may have a form of bulky mass or a form of a thin film deposited on a substrate by physical vapor deposition technique.

Abstract: A now superconducting material comprising a compound oxide represented by the general formula:(Ba, .gamma.)x(.alpha.,.beta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Ba, an atomic ratio of .gamma. to Ba being selected in a range between 1% and 90%,".alpha." represents Y or La,".beta." represents an element of IIIa group of the periodic but is different from .alpha., an atomic ratio of .beta. to .alpha. is selected in a range between 1% and 90%,".epsilon." represents a metal element of IIIb group of the periodic table,x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z<1 respectively, andthe expression of (Ba, .gamma.) and (.alpha.,.beta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

Abstract: Disclosed are pin or nip type amorphous photovoltaic elements having the i-type layer comprised of an a-SiGe: H film, which are characterized in that an i-type amorphous silicon buffer layer is disposed between the layers of p-type and i-type and thus, the mutual diffusion of impurities and/or elements added to the i-type and/or the p-type layers through the p/i boundary is effectively restricted due to the presence of the buffer layer. As a result the formation of defects at the p/i boundary and the deterioration of the p-type layer are effectively prevented, and the properties important to these kinds of devices, such as Voc, Jsc, FF being substantially improved, thereby making it possible to provide photovoltaic elements such as solar batteries having a practically acceptable long life span and a high reliability.

Abstract: A multicomponent amorphous silicon film suitable for a solar cell is produced at a higher deposition rate by a novel process comprising using jointly a sputtering method and a plasma CVD method within a pressure range of not lower than a pressure at which the maximum film formation rate is given in the sputtering method.

Abstract: The present invention is an audible alarm unit including a coil, a resistor, an NPN transistor, and a piezoelectric transducer having first and second electrodes and a feedback electrode. The collector and emitter of the transistor and the coil are connected in series between positive and negative terminals of a direct current power source. The base of the transistor is connected to the collector through the resistor. The first and second electrodes of the piezoelectric transducer are connected either to both ends of the coil or to the collector and emitter of the transistor, respectively. The feedback electrode of the piezoelectric transducer is connected to the base of the transistor.