Abstract: Various embodiments of the present invention are directed to methods of forming nanostructures on non-single crystal substrates, and resulting nanostructures and nanoscale functional devices. In one embodiment of the present invention, a method of forming nanostructures includes forming a multi-layer structure comprising a metallic layer and a silicon layer. The multi-layer structure is subjected to a thermal process to form metal-silicide crystallites. The nanostructures are grown on the metal-silicide crystallites. In another embodiment of the present invention, a structure includes a non-single-crystal substrate and a layer formed over the non-single-crystal substrate. The layer includes metal-silicide crystallites. A number of nanostructures may be formed on the metal-silicide crystallites. The disclosed structures may be used to form a number of different types of functional devices for use in electronics and/or optoelectronics devices.

Abstract: One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically conductive and/or optically active.

Abstract: An orthogonal signal output circuit having an error correction function for correcting an orthogonal error, including: first and second differential circuits; and first to fourth variable resistors, wherein the first variable resistor is connected to a positive output of the first differential circuit and a positive output of the second differential circuit; the second variable resistor is connected to the positive output of the first differential circuit and a negative output of the second differential circuit; the third variable resistor is connected to a negative output of the first differential circuit and the positive output of the second differential circuit; and the fourth variable resistor is connected to the negative output of the first differential circuit and the negative output of the second differential circuit.

Abstract: Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.

Abstract: An optical emitter includes at least one nanowire connected in a circuit such that current selectively flows into the nanowire. The nanowire has a length-to-diameter ratio of ten or less. A method for generating optical emission includes applying a voltage across a nanowire to inject charge carriers into the nanowire, the nanowire having a length-to-diameter ratio of ten or less; and confining the charge carriers within the nanowire by placing a high bandgap material at each end of the nanowire, wherein the charge carriers recombine to emit optical energy.

Abstract: A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.

Abstract: An orthogonal signal output circuit having an error correction function for correcting an orthogonal error, including: first and second differential circuits; and first to fourth variable resistors, wherein the first variable resistor is connected to a positive output of the first differential circuit and a positive output of the second differential circuit; the second variable resistor is connected to the positive output of the first differential circuit and a negative output of the second differential circuit; the third variable resistor is connected to a negative output of the first differential circuit and the positive output of the second differential circuit; and the fourth variable resistor is connected to the negative output of the first differential circuit and the negative output of the second differential circuit.

Abstract: A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.

Abstract: A method of forming nanostructures using catalyst-free epitaxial growth includes depositing a first layer of a non-single crystalline material on a support structure; heating the support structure and the first layer such that a combined layer is formed; and growing a nanostructure on the combined layer. A hetero-crystalline includes a support structure; a first layer of non-single crystalline material deposited on the support structure and combined with the support structure or a second layer to form a combined layer; and a nanostructure of a single crystalline material grown on the combined layer.

Abstract: Embodiments of the present invention relate to nanowire-based photovoltaic cells and to methods for fabricating the same. In one embodiment, a photovoltaic cell includes a first semiconductor layer doped with a first impurity and disposed on a portion of a first raised surface of a substrate and a second semiconductor layer doped with a second impurity and disposed on a second raised surface of the substrate. The first semiconductor layer has at least one negatively sloped surface, and the second semiconductor layer has at least one positively sloped surface neighboring the at least one negatively sloped surface of the first semiconductor layer. The photovoltaic cell includes at least one nanowire electronically coupled to the negatively sloped surface of the first semiconductor layer and electronically coupled to the positively sloped surface of the second semiconductor layer.

Abstract: A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.

Abstract: A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires.

Abstract: Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.

Abstract: Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.

Abstract: A hetero-crystalline semiconductor device and a method of making the same include a non-single crystalline semiconductor layer and a nanostructure layer that comprises a single crystalline semiconductor nanostructure integral to a crystallite of the non-single crystalline semiconductor layer.

Abstract: Various embodiments of the present invention are directed to methods of forming nanostructures on non-single crystal substrates, and resulting nanostructures and nanoscale functional devices. In one embodiment of the present invention, a method of forming nanostructures includes forming a multi-layer structure comprising a metallic layer and a silicon layer. The multi-layer structure is subjected to a thermal process to form metal-silicide crystallites. The nanostructures are grown on the metal-silicide crystallites. In another embodiment of the present invention, a structure includes a non-single-crystal substrate and a layer formed over the non-single-crystal substrate. The layer includes metal-silicide crystallites. A number of nanostructures may be formed on the metal-silicide crystallites. The disclosed structures may be used to form a number of different types of functional devices for use in electronics and/or optoelectronics devices.

Abstract: A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.

Abstract: One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically conductive and/or optically active.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: THE invention is a method of producing an individual an array, or multiple arrays of quantum dots. Single dots, as well as two or three-dimensional groupings may be created. The invention involves the transfer of quantum dots from a receptor site on a substrate where they are originally created to a separate substrate or layer, with a repetition of the process and a variation in the original pattern to create different structures.