Abstract: The present disclosure makes it possible to perform a failure diagnosis of an electric two-wheeled vehicle easily, conveniently, and immediately. The electric two-wheeled vehicle includes an electric equipment unit having an IC tag and a host unit. The host unit is capable of communicating with the IC tag, and obtains failure information of the electric equipment unit while electric power is supplied from the battery to the electric equipment unit. The information communication terminal obtains the failure information by communicating with the electric two-wheeled vehicle in a non-contact manner, and transmits the failure information to the server via the network. The server performs a failure diagnosis on the electric two-wheeled vehicle based on the failure information.

Abstract: The present disclosure makes it possible to perform a failure diagnosis of an electric two-wheeled vehicle easily, conveniently, and immediately. The electric two-wheeled vehicle includes an electric equipment unit having an IC tag and a host unit. The host unit is capable of communicating with the IC tag, and obtains failure information of the electric equipment unit while electric power is supplied from the battery to the electric equipment unit. The information communication terminal obtains the failure information by communicating with the electric two-wheeled vehicle in a non-contact manner, and transmits the failure information to the server via the network. The server performs a failure diagnosis on the electric two-wheeled vehicle based on the failure information.

Abstract: A solid-state imaging device includes a source-follower amplifier having a driver transistor and a load circuit connected to the driver transistor. The load circuit is structured by a first MOS transistor having a gate with a fixed potential, and a load device connected to a source of the first MOS transistor. Furthermore, the load circuit of the source-follower amplifier is structured by a plurality of serially connected MOS transistors. Furthermore, by adapting a structure using a current mirror circuit, load conductance is reduced.

Abstract: A driver unit of a solid state image sensing apparatus changes the substrate bias voltage from a first bias voltage to a second bias voltage which is lower than the first bias voltage and is for making a height of an overflow barrier higher than a height of the barrier in the readout gate. Moreover, the driver unit lowers the height of the overflow barrier by superimposing a saturation signal control pulse on the second bias voltage after an end of an exposure period and before sweeping out all the signal charge of vertical CCDs.

Abstract: The present invention provides a semiconductor device which enables to control increase of current consumption and decrease of gain at the time of broad bandwidth for frequency. The semiconductor device includes a source-follower amplifier and a first control circuit, and the source-follower amplifier includes plurality of driver transistors D2a and D2b using sources as output, the sources being connected to each other therein, a load transistor L2 connected to plurality of the drive transistors D2a and D2b. The first control circuit (switching transistors S and T) makes plurality of the driver transistors operate selectively depending on frequency bandwidth of a input signal to the source-follower amplifier.

Abstract: The solid-state imaging device in the present invention includes a source-follower amplifier having a driver transistor and a load circuit connected to the driver transistor. The load circuit is structured by a first MOS transistor having a gate with a fixed potential, and a load device connected to a source of the first MOS transistor. Furthermore, the load circuit of the source-follower amplifier is structured by a plurality of serially connected MOS transistors. Furthermore, by adapting a structure using a current mirror circuit, load conductance is reduced.

Abstract: The driver unit of the solid state image sensing apparatus of the present invention changes the substrate bias voltage from the first bias voltage to the second voltage which is lower than the first bias voltage and is for making a height of the overflow barrier higher than the height of the barrier in the readout gate and lowers the height of the overflow barrier by superimposing the saturation signal control pulse on the second bias voltage after the end of the exposure period and before sweeping out all the signal charge of the vertical CCDs.

Abstract: A charge storing layer of a photodiode having an N-type conductivity includes an N+-type additional implant area in the vicinity of a junction between the charge storing layer and an isolation region. The additional implant area provides an increase of stored charge and suppression of increase of the pulse voltage for a substrate shutter, and can be made to have a smaller width within a current design rule.

Abstract: In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.

Abstract: A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film of the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying.

Abstract: A charge storing layer of a photodiode having an N-type conductivity includes an N30 -type additional implant area in the vicinity of a junction between the charge storing layer and an isolation region. The additional implant area provides an increase of stored charge and suppression of increase of the pulse voltage for a substrate shutter, and can be made to have a smaller width within a current design rule.

Abstract: A charge storing layer of a photodiode having an N-type conductivity includes an N+-type additional implant area in the vicinity of a junction between the charge storing layer and an isolation region. The additional implant area provides an increase of stored charge and suppression of increase of the pulse voltage for a substrate shutter, and can be made to have a smaller width within a current design rule.

Abstract: In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.

Abstract: In a charge transfer device and a driving method therefor, electrons are injected through an insulating film into floating gate 108 or electrons are extracted through the insulating film from the floating gate 108, whereby the potential of the floating gate is converged to a fixed voltage.

Abstract: In a charge transfer device, a floating gate is provided in an insulating film which is provided on a charge transfer channel layer. A buffer amplifier is connected with the floating gate, and detects signal charges in the charge transfer channel layer to generate a signal indicative of an output voltage corresponding to the signal charges. A bias gate is provided in the insulating film apart from the floating gate to cover at least a part of the floating gate. A bias applying unit applies a bias voltage to the bias gate in response to the output voltage signal such that an alternate current (AC) component of a voltage of the floating gate is substantially equal to an AC component of a voltage of the bias gate.

Abstract: A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability. A thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film, the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film to the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying.

Abstract: Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Abstract: In an on-chip source follower amplifier having at least one amplification circuit formed on a semiconductor substrate of a first conductivity type, the amplification circuit includes a driver transistor, a peripheral device, a first capacitance, and a high resistance. The driver transistor is formed in a first conductive region of a second conductivity type on the semiconductor substrate. The peripheral device is formed in a second conductive region of the second conductivity type on the semiconductor substrate. The second conductive region is isolated from the first conductive region. The first capacitance couples the first conductive region to a source of the driver transistor. The high resistance is connected between the first conductive region and a DC power supply.

Abstract: The solid-state image sensor device includes a photodiode section having a storage region of a second conductivity type and a surface layer of a first conductivity type, a vertical CCD register having a buried layer of the second conductivity type and a plurality of transfer electrodes, and a transfer gate having a transfer gate electrode. A channel control region of the second conductivity type is provided on a surface of the semiconductor substrate region covered by the transfer gate. With the channel control region of the second conductivity type provided at a surface portion of the semiconductor substrate region of the transfer gate, the charge read-out channel for reading out charge from the storage region into the buried layer may be readily formed. Thus, it is possible to reduce the read-out voltage or reduce the gate length of the transfer gate.

Abstract: A charge transfer device has an output structure formed, in a semiconductor substrate of a first conductivity type, of a base region of a second conductivity type, an output region of the first conductivity type formed in the base region, a reset-drain region of a second conductivity type formed separately from the base region and held at a constant potential, and a reset gate electrode formed on the semiconductor substrate between the base and reset-drain regions via an insulator film to receive a reset pulse. The base region has a portion under the output region which is designed to allow a complete depletion throughout its thickness.