Abstract: A light diffusion plate made of quartz and provided with a plurality of grooves each having an inclined surface is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the light diffusion plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the light diffusion plate are refracted by the inclined surfaces of the plurality of grooves. Part of the light entering the light diffusion plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer. Thus, the in-plane uniformity of an illuminance distribution on the semiconductor wafer is increased.

Abstract: A light diffusion plate made of quartz and provided with a plurality of recessed spherical surfaces is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the light diffusion plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the light diffusion plate are diverged by the recessed spherical surfaces. Part of the light entering the light diffusion plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer.

Abstract: A first mass flow controller is provided in an inert gas pipe for feeding nitrogen gas. A second mass flow controller is provided in a reactive gas pipe for feeding ammonia. A joint pipe communicatively connects a joint portion of the inert gas pipe and the reactive gas pipe to a chamber for treating a semiconductor wafer. The joint pipe is provided with a mass flowmeter. A detector detects gas leakage by comparing a total value of flow rates of nitrogen controlled by the first mass flow controller and of ammonia controlled by the second mass flow controller with a measurement value of a flow rate of a treatment gas, obtained by the mass flowmeter.

Abstract: Nitrogen gas supplied from the outside of a chamber flows into an annular first buffer to diffuse uniformly along the circumferential direction of a gas ring. The nitrogen gas filled in the first buffer flows into a second buffer with having a volume larger than that of the first buffer to diffuse more uniformly along the circumferential direction of the gas ring. The nitrogen gas filled in the second buffer flows into a labyrinth portion to flow through a bent flow path of the labyrinth portion from the inside toward the outside along the radial direction of the gas ring, so that a flow rate of the nitrogen gas decreases. The nitrogen gas flowing out of the labyrinth portion flows into a discharge flow path, and flows from the outside toward the inside along the radial direction of the gas ring to be discharged from the gas discharge opening.

Abstract: A plurality of substrate support parts provided on a susceptor each have an outer circumferential surface such that a plane parallel to a holding surface of a holding plate is formed on a top portion of a spherical surface. Even if a semiconductor wafer irradiated with flash light abruptly warps such that its front surface becomes raised, a back surface of the semiconductor wafer can smoothly rub against the plurality of substrate support parts. This can prevent chipping and breakage of the substrate support parts, and can also prevent scratches on the back surface of the semiconductor wafer. The substrate support parts having the outer circumferential surface of the above-mentioned shape can be located in any directions on the holding plate, thereby facilitating manufacturing, inspection, and management of the susceptor relating to the substrate support parts.

Abstract: A sealing structure is achieved by sandwiching an O ring between an upper chamber window and a chamber side portion and pressing a clamping ring against a top of a peripheral portion of the upper chamber window. Grooving is performed on a lower surface and an upper surface of the peripheral portion of the upper chamber window, to thereby form a plurality of grooves thereon. Flash light traveling into the peripheral portion of the upper chamber window during irradiation with flash light is reflected by the plurality of grooves and is prevented from traveling toward the O ring. This significantly reduces an amount of flash light reaching the O ring, and thus degradation of the O ring due to the irradiation with the flash light can be prevented.

Abstract: A distribution adjusting member provided with a plurality of concave lenses fitted into a positioning plate is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the positioning plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the positioning plate are diverged by the concave lenses. Part of the light entering the positioning plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer. Thus, the in-plane uniformity of an illuminance distribution on the semiconductor wafer is increased.

Abstract: A light diffusion plate made of quartz and provided with a plurality of grooves each having an inclined surface is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the light diffusion plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the light diffusion plate are refracted by the inclined surfaces of the plurality of grooves. Part of the light entering the light diffusion plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer. Thus, the in-plane uniformity of an illuminance distribution on the semiconductor wafer is increased.

Abstract: A first mass flow controller is provided in an inert gas pipe for feeding nitrogen gas. A second mass flow controller is provided in a reactive gas pipe for feeding ammonia. A joint pipe communicatively connects a joint portion of the inert gas pipe and the reactive gas pipe to a chamber for treating a semiconductor wafer. The joint pipe is provided with a mass flowmeter. A detector detects gas leakage by comparing a total value of flow rates of nitrogen controlled by the first mass flow controller and of ammonia controlled by the second mass flow controller with a measurement value of a flow rate of a treatment gas, obtained by the mass flowmeter.

Abstract: Nitrogen gas supplied from the outside of a chamber flows into an annular first buffer to diffuse uniformly along the circumferential direction of a gas ring. The nitrogen gas filled in the first buffer flows into a second buffer with having a volume larger than that of the first buffer to diffuse more uniformly along the circumferential direction of the gas ring. The nitrogen gas filled in the second buffer flows into a labyrinth portion to flow through a bent flow path of the labyrinth portion from the inside toward the outside along the radial direction of the gas ring, so that a flow rate of the nitrogen gas decreases. The nitrogen gas flowing out of the labyrinth portion flows into a discharge flow path, and flows from the outside toward the inside along the radial direction of the gas ring to be discharged from the gas discharge opening.

Abstract: A light diffusion plate made of quartz and provided with a plurality of recessed spherical surfaces is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the light diffusion plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the light diffusion plate are diverged by the recessed spherical surfaces. Part of the light entering the light diffusion plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer. Thus, the in-plane uniformity of an illuminance distribution on the semiconductor wafer is increased.

Abstract: A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer.

Abstract: A plurality of substrate support parts provided on a susceptor each have an outer circumferential surface such that a plane parallel to a holding surface of a holding plate is formed on a top portion of a spherical surface. Even if a semiconductor wafer irradiated with flash light abruptly warps such that its front surface becomes raised, a back surface of the semiconductor wafer can smoothly rub against the plurality of substrate support parts. This can prevent chipping and breakage of the substrate support parts, and can also prevent scratches on the back surface of the semiconductor wafer. The substrate support parts having the outer circumferential surface of the above-mentioned shape can be located in any directions on the holding plate, thereby facilitating manufacturing, inspection, and management of the susceptor relating to the substrate support parts.

Abstract: A sealing structure is achieved by sandwiching an O ring between an upper chamber window and a chamber side portion and pressing a clamping ring against a top of a peripheral portion of the upper chamber window. Grooving is performed on a lower surface and an upper surface of the peripheral portion of the upper chamber window, to thereby form a plurality of grooves thereon. Flash light traveling into the peripheral portion of the upper chamber window during irradiation with flash light is reflected by the plurality of grooves and is prevented from traveling toward the O ring. This significantly reduces an amount of flash light reaching the O ring, and thus degradation of the O ring due to the irradiation with the flash light can be prevented.

Abstract: The front surface of a semiconductor wafer with a back surface supported by lift pins is irradiated with a flash of light from flash lamps, so that the semiconductor wafer is heated. A transparent restriction ring made of quartz is into abutment with or close to a peripheral portion of the front surface of the semiconductor wafer. In this state, the flash irradiation is performed. If the temperature of the front surface of the semiconductor wafer rises rapidly when the flash irradiation is performed, the restriction ring restrains the semiconductor wafer from jumping up from the lift pins. This prevents wafer cracking resulting from the jumping of the semiconductor wafer when the flash irradiation is performed.

Abstract: A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer.

Abstract: A substrate processing apparatus includes a substrate holding and rotating mechanism for holding and rotating a substrate; a positioning member disposed on the substrate holding and rotating mechanism for positioning a substrate at a predetermined substrate holding position; a substrate transfer mechanism for transferring a substrate to the substrate holding and rotating mechanism; and a pressing unit disposed on the substrate transfer mechanism for pressing a substrate toward the positioning member.

Abstract: A substrate processing apparatus includes a substrate holding and rotating mechanism for holding and rotating a substrate; a positioning member disposed on the substrate holding and rotating mechanism for positioning a substrate at a predetermined substrate holding position; a substrate transfer mechanism for transferring a substrate to the substrate holding and rotating mechanism; and a pressing unit disposed on the substrate transfer mechanism for pressing a substrate toward the positioning member.