Abstract: In a drive circuit of a solid-state imaging device, no specific voltage source exclusively used to set a substrate voltage is required. An external circuit required when the entire drive circuit is fabricated as an integrated circuit, can be eliminated.

Abstract: Disclosed is a CMOS integrated circuit, in which a high voltage circuit with both positive and negative polarities and a large scale low voltage circuit are formed on the same chip. The high voltage circuit is composed of a CMOS circuit having an nMOS transistor formed on a p-type semiconducting substrate, and a pMOS transistor formed in an n-well formed on the p-type semiconducting substrate. The low voltage circuit is composed of a CMOS circuit having a pMOS transistor which is formed in an n-well formed on the p-type semiconducting substrate, and an nMOS transistor formed in a p-well formed in the n-well.

Abstract: In a drive circuit of a solid-state imaging device, no specific voltage source exclusively used to set a substrate voltage is required. An external circuit required when the entire drive circuit is fabricated as an integrated circuit can be eliminated. An image sensing system has a solid-state imaging device formed on a semiconductor body. The solid-state imaging device includes a plurality of photo sensors formed in a major surface of the semiconductor body. The photo sensors receive light incident thereon and generate charges corresponding to the incident light and accumulating the charges therein. A video signal output outputs a video signal corresponding to the accumulated charges, and a charge drain discharges charges from the photo sensors. A timing generator generates a timing signal. A first power supply source provides a first voltage to the solid-state imaging device. A second power supply source provides a second voltage to the solid-state imaging device.