Patents by Inventor Nobuhiko Sarukura

Nobuhiko Sarukura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9672944
    Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.
    Type: Grant
    Filed: November 23, 2015
    Date of Patent: June 6, 2017
    Assignees: OSAKA UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Masakatsu Murakami, Nobuhiko Sarukura, Hiroshi Azechi, Ryo Yasuhara, Toshiyuki Kawashima, Hirofumi Kan
  • Publication number: 20160104547
    Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.
    Type: Application
    Filed: November 23, 2015
    Publication date: April 14, 2016
    Inventors: Masakatsu MURAKAMI, Nobuhiko SARUKURA, Hiroshi AZECHI, Ryo YASUHARA, Toshiyuki KAWASHIMA, Hirofumi KAN
  • Patent number: 9230694
    Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: January 5, 2016
    Assignees: OSAKA UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Masakatsu Murakami, Nobuhiko Sarukura, Hiroshi Azechi, Ryo Yasuhara, Toshiyuki Kawashima, Hirofumi Kan
  • Patent number: 8920677
    Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: December 30, 2014
    Assignee: Daishinku Corporation
    Inventors: Masataka Kano, Akira Wakamiya, Kohei Yamanoi, Toshihiko Shimizu, Nobuhiko Sarukura, Dirk Ehrentraut, Tsuguo Fukuda
  • Publication number: 20130087739
    Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.
    Type: Application
    Filed: June 17, 2011
    Publication date: April 11, 2013
    Applicant: DAISHINKU CORPORATION
    Inventors: Masataka Kano, Akira Wakamiya, Kohei Yamanoi, Toshihiko Shimizu, Nobuhiko Sarukura, Dirk Ehrentraut, Tsuguo Fukuda
  • Patent number: 8405034
    Abstract: A neutron measurement apparatus 1A includes a neutron detection unit 10, a photodetection unit 20 that detects scintillation light emitted from the neutron detection unit 10, a light guide optical system 15 that guides the scintillation light from the neutron detection unit 10 to the photodetection unit 20, and a shielding member 30 which is located between the neutron detection unit 10 and the photodetection unit 20 for shielding radiation passing in a direction toward the photodetection unit 20. Further, a scintillator formed of a lithium glass material in which PrF3 is doped to a glass material 20Al(PO3)3-80LiF is used as a neutron detection scintillator composing the neutron detection unit 10. Thereby, the neutron detection scintillator and the neutron measurement apparatus which are capable of suitably performing neutron measurement such as measurement of scattered neutrons from an implosion plasma can be realized.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: March 26, 2013
    Assignees: Osaka University, TOKAI UNIVERSITY Educational System
    Inventors: Hiroshi Azechi, Nobuhiko Sarukura, Yasunobu Arikawa, Mitsuo Nakai, Hirofumi Kan, Takahiro Murata, Toshihisa Suyama, Shigeru Fujino, Yoshiyuki Usuki, Hideki Yoshida, Akira Yoshikawa
  • Publication number: 20120155590
    Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.
    Type: Application
    Filed: July 20, 2010
    Publication date: June 21, 2012
    Applicants: HAMAMATSU PHOTONICS K.K., OSAKA UNIVERSITY
    Inventors: Masakatsu Murakami, Nobuhiko Sarukura, Hiroshi Azechi, Ryo Yasuhara, Toshiyuki Kawashima, Hirofumi Kan
  • Publication number: 20120091351
    Abstract: A neutron measurement apparatus 1A includes a neutron detection unit 10, a photodetection unit 20 that detects scintillation light emitted from the neutron detection unit 10, a light guide optical system 15 that guides the scintillation light from the neutron detection unit 10 to the photodetection unit 20, and a shielding member 30 which is located between the neutron detection unit 10 and the photodetection unit 20 for shielding radiation passing in a direction toward the photodetection unit 20. Further, a scintillator formed of a lithium glass material in which PrF3 is doped to a glass material 20Al(PO3)3-80LiF is used as a neutron detection scintillator composing the neutron detection unit 10. Thereby, the neutron detection scintillator and the neutron measurement apparatus which are capable of suitably performing neutron measurement such as measurement of scattered neutrons from an implosion plasma can be realized.
    Type: Application
    Filed: April 27, 2010
    Publication date: April 19, 2012
    Applicants: OSAKA UNIVERSITY, TOKAI UNIVERSITY EDUCATIONAL SYSTEM, HAMAMATSU PHOTONICS K.K., FURUKAWA CO., LTD, NAGASAKI PREFECTURAL GOVERNMENT, TOKUYAMA CORPORATION
    Inventors: Hiroshi Azechi, Nobuhiko Sarukura, Yasunobu Arikawa, Mitsuo Nakai, Hirofumi Kan, Takahiro Murata, Toshihisa Suyama, Shigeru Fujino, Yoshiyuki Usuki, Hideki Yoshida, Akira Yoshikawa
  • Patent number: 7440671
    Abstract: Materials transparent to terahertz waves are very limited, and it is difficult to obtain the required performance by selecting the material. Further, it is also difficult to search for a novel material. Therefore, by letting a known material transparent to terahertz waves have a photonic crystal structure and controlling the structure, an optical waveguide having the required properties is provided. An optical waveguide for propagation of far-infrared radiation in the terahertz region, which optical waveguide is made of a fluorinated amorphous polymer. Particularly preferred is a polymer having a fluorinated aliphatic ring structure in its main chain, obtained by cyclopolymerization of a fluorinated monomer having at least two polymerizable double bonds.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: October 21, 2008
    Assignee: Asahi Glass Company, Limited
    Inventors: Nobuhiko Sarukura, Ko Aosaki, Hideki Sato, Yoshihiko Sakane
  • Publication number: 20070269178
    Abstract: Materials transparent to terahertz waves are very limited, and it is difficult to obtain the required performance by selecting the material. Further, it is also difficult to search for a novel material. Therefore, by letting a known material transparent to terahertz waves have a photonic crystal structure and controlling the structure, an optical waveguide having the required properties is provided. An optical waveguide for propagation of far-infrared radiation in the terahertz region, which optical waveguide is made of a fluorinated amorphous polymer. Particularly preferred is a polymer having a fluorinated aliphatic ring structure in its main chain, obtained by cyclopolymerization of a fluorinated monomer having at least two polymerizable double bonds.
    Type: Application
    Filed: May 18, 2007
    Publication date: November 22, 2007
    Applicant: Asahi Glass Company, Limited
    Inventors: Nobuhiko Sarukura, Ko Aosaki, Hideki Sato, Yoshihiko Sakane
  • Patent number: 6806503
    Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: October 19, 2004
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
  • Patent number: 6633419
    Abstract: A method and apparatus for producing a hologram using a two-beam laser interference exposure process, comprising the steps of using as a light source a femtosecond laser having a pulse width of 900-10 femtoseconds and a peak output of 1 GW or more and capable of generating a pulse beam at or close to the Fourier transform limit, dividing the pulse beam from the laser into two by a beam splitter, controlling the two beams temporally through an optical delay circuit and spatially using plane and concave mirrors each having a slightly rotatable reflection surface to converge the beams on a surface of or within a substrate for recording a hologram at an energy density of 100 GW/cm2 or more with keeping each polarization plane of the two beams in parallel so as to match the converged spot of the two beams temporally and spatially, whereby a hologram is recorded irreversibly on the substrate formed of a transparent material, semiconductor material or metallic material.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: October 14, 2003
    Assignee: Japan Science and Technology Corporation
    Inventors: Hideo Hosono, Masahiro Hirano, Nobuhiko Sarukura, Kenichi Kawamura
  • Publication number: 20030132449
    Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
    Type: Application
    Filed: November 5, 2002
    Publication date: July 17, 2003
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
  • Publication number: 20020126333
    Abstract: A method and apparatus for producing a hologram using a two-beam laser interference exposure process, comprising the steps of using as a light source a femtosecond laser having a pulse width of 900-10 femtoseconds and a peak output of 1 GW or more and capable of generating a pulse beam at or close to the Fourier transform limit, dividing the pulse beam from the laser into two by a beam splitter, controlling the two beams temporally through an optical delay circuit and spatially using plane and concave mirrors each having a slightly rotatable reflection surface to converge the beams on a surface of or within a substrate for recording a hologram at an energy density of 100 GW/cm2 or more with keeping each polarization plane of the two beams in parallel so as to match the converged spot of the two beams temporally and spatially, whereby a hologram is recorded irreversibly on the substrate formed of a transparent material, semiconductor material or metallic material.
    Type: Application
    Filed: November 9, 2001
    Publication date: September 12, 2002
    Inventors: Hideo Hosono, Masahiro Hirano, Nobuhiko Sarukura, Kenichi Kawamura