Patents by Inventor Nobuhiko Sarukura
Nobuhiko Sarukura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9672944Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.Type: GrantFiled: November 23, 2015Date of Patent: June 6, 2017Assignees: OSAKA UNIVERSITY, HAMAMATSU PHOTONICS K.K.Inventors: Masakatsu Murakami, Nobuhiko Sarukura, Hiroshi Azechi, Ryo Yasuhara, Toshiyuki Kawashima, Hirofumi Kan
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Publication number: 20160104547Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.Type: ApplicationFiled: November 23, 2015Publication date: April 14, 2016Inventors: Masakatsu MURAKAMI, Nobuhiko SARUKURA, Hiroshi AZECHI, Ryo YASUHARA, Toshiyuki KAWASHIMA, Hirofumi KAN
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Patent number: 9230694Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.Type: GrantFiled: July 20, 2010Date of Patent: January 5, 2016Assignees: OSAKA UNIVERSITY, HAMAMATSU PHOTONICS K.K.Inventors: Masakatsu Murakami, Nobuhiko Sarukura, Hiroshi Azechi, Ryo Yasuhara, Toshiyuki Kawashima, Hirofumi Kan
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Patent number: 8920677Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.Type: GrantFiled: June 17, 2011Date of Patent: December 30, 2014Assignee: Daishinku CorporationInventors: Masataka Kano, Akira Wakamiya, Kohei Yamanoi, Toshihiko Shimizu, Nobuhiko Sarukura, Dirk Ehrentraut, Tsuguo Fukuda
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Publication number: 20130087739Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.Type: ApplicationFiled: June 17, 2011Publication date: April 11, 2013Applicant: DAISHINKU CORPORATIONInventors: Masataka Kano, Akira Wakamiya, Kohei Yamanoi, Toshihiko Shimizu, Nobuhiko Sarukura, Dirk Ehrentraut, Tsuguo Fukuda
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Patent number: 8405034Abstract: A neutron measurement apparatus 1A includes a neutron detection unit 10, a photodetection unit 20 that detects scintillation light emitted from the neutron detection unit 10, a light guide optical system 15 that guides the scintillation light from the neutron detection unit 10 to the photodetection unit 20, and a shielding member 30 which is located between the neutron detection unit 10 and the photodetection unit 20 for shielding radiation passing in a direction toward the photodetection unit 20. Further, a scintillator formed of a lithium glass material in which PrF3 is doped to a glass material 20Al(PO3)3-80LiF is used as a neutron detection scintillator composing the neutron detection unit 10. Thereby, the neutron detection scintillator and the neutron measurement apparatus which are capable of suitably performing neutron measurement such as measurement of scattered neutrons from an implosion plasma can be realized.Type: GrantFiled: April 27, 2010Date of Patent: March 26, 2013Assignees: Osaka University, TOKAI UNIVERSITY Educational SystemInventors: Hiroshi Azechi, Nobuhiko Sarukura, Yasunobu Arikawa, Mitsuo Nakai, Hirofumi Kan, Takahiro Murata, Toshihisa Suyama, Shigeru Fujino, Yoshiyuki Usuki, Hideki Yoshida, Akira Yoshikawa
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Publication number: 20120155590Abstract: An object of the present invention is to efficiently improve uniformity of energy lines to be irradiated.Type: ApplicationFiled: July 20, 2010Publication date: June 21, 2012Applicants: HAMAMATSU PHOTONICS K.K., OSAKA UNIVERSITYInventors: Masakatsu Murakami, Nobuhiko Sarukura, Hiroshi Azechi, Ryo Yasuhara, Toshiyuki Kawashima, Hirofumi Kan
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Publication number: 20120091351Abstract: A neutron measurement apparatus 1A includes a neutron detection unit 10, a photodetection unit 20 that detects scintillation light emitted from the neutron detection unit 10, a light guide optical system 15 that guides the scintillation light from the neutron detection unit 10 to the photodetection unit 20, and a shielding member 30 which is located between the neutron detection unit 10 and the photodetection unit 20 for shielding radiation passing in a direction toward the photodetection unit 20. Further, a scintillator formed of a lithium glass material in which PrF3 is doped to a glass material 20Al(PO3)3-80LiF is used as a neutron detection scintillator composing the neutron detection unit 10. Thereby, the neutron detection scintillator and the neutron measurement apparatus which are capable of suitably performing neutron measurement such as measurement of scattered neutrons from an implosion plasma can be realized.Type: ApplicationFiled: April 27, 2010Publication date: April 19, 2012Applicants: OSAKA UNIVERSITY, TOKAI UNIVERSITY EDUCATIONAL SYSTEM, HAMAMATSU PHOTONICS K.K., FURUKAWA CO., LTD, NAGASAKI PREFECTURAL GOVERNMENT, TOKUYAMA CORPORATIONInventors: Hiroshi Azechi, Nobuhiko Sarukura, Yasunobu Arikawa, Mitsuo Nakai, Hirofumi Kan, Takahiro Murata, Toshihisa Suyama, Shigeru Fujino, Yoshiyuki Usuki, Hideki Yoshida, Akira Yoshikawa
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Patent number: 7440671Abstract: Materials transparent to terahertz waves are very limited, and it is difficult to obtain the required performance by selecting the material. Further, it is also difficult to search for a novel material. Therefore, by letting a known material transparent to terahertz waves have a photonic crystal structure and controlling the structure, an optical waveguide having the required properties is provided. An optical waveguide for propagation of far-infrared radiation in the terahertz region, which optical waveguide is made of a fluorinated amorphous polymer. Particularly preferred is a polymer having a fluorinated aliphatic ring structure in its main chain, obtained by cyclopolymerization of a fluorinated monomer having at least two polymerizable double bonds.Type: GrantFiled: May 18, 2007Date of Patent: October 21, 2008Assignee: Asahi Glass Company, LimitedInventors: Nobuhiko Sarukura, Ko Aosaki, Hideki Sato, Yoshihiko Sakane
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Publication number: 20070269178Abstract: Materials transparent to terahertz waves are very limited, and it is difficult to obtain the required performance by selecting the material. Further, it is also difficult to search for a novel material. Therefore, by letting a known material transparent to terahertz waves have a photonic crystal structure and controlling the structure, an optical waveguide having the required properties is provided. An optical waveguide for propagation of far-infrared radiation in the terahertz region, which optical waveguide is made of a fluorinated amorphous polymer. Particularly preferred is a polymer having a fluorinated aliphatic ring structure in its main chain, obtained by cyclopolymerization of a fluorinated monomer having at least two polymerizable double bonds.Type: ApplicationFiled: May 18, 2007Publication date: November 22, 2007Applicant: Asahi Glass Company, LimitedInventors: Nobuhiko Sarukura, Ko Aosaki, Hideki Sato, Yoshihiko Sakane
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Patent number: 6806503Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.Type: GrantFiled: November 5, 2002Date of Patent: October 19, 2004Assignee: Japan Science and Technology AgencyInventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
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Patent number: 6633419Abstract: A method and apparatus for producing a hologram using a two-beam laser interference exposure process, comprising the steps of using as a light source a femtosecond laser having a pulse width of 900-10 femtoseconds and a peak output of 1 GW or more and capable of generating a pulse beam at or close to the Fourier transform limit, dividing the pulse beam from the laser into two by a beam splitter, controlling the two beams temporally through an optical delay circuit and spatially using plane and concave mirrors each having a slightly rotatable reflection surface to converge the beams on a surface of or within a substrate for recording a hologram at an energy density of 100 GW/cm2 or more with keeping each polarization plane of the two beams in parallel so as to match the converged spot of the two beams temporally and spatially, whereby a hologram is recorded irreversibly on the substrate formed of a transparent material, semiconductor material or metallic material.Type: GrantFiled: November 9, 2001Date of Patent: October 14, 2003Assignee: Japan Science and Technology CorporationInventors: Hideo Hosono, Masahiro Hirano, Nobuhiko Sarukura, Kenichi Kawamura
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Publication number: 20030132449Abstract: An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200° C., and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.Type: ApplicationFiled: November 5, 2002Publication date: July 17, 2003Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kenichi Kawamura, Nobuhiko Sarukura, Msahiro Hirano
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Publication number: 20020126333Abstract: A method and apparatus for producing a hologram using a two-beam laser interference exposure process, comprising the steps of using as a light source a femtosecond laser having a pulse width of 900-10 femtoseconds and a peak output of 1 GW or more and capable of generating a pulse beam at or close to the Fourier transform limit, dividing the pulse beam from the laser into two by a beam splitter, controlling the two beams temporally through an optical delay circuit and spatially using plane and concave mirrors each having a slightly rotatable reflection surface to converge the beams on a surface of or within a substrate for recording a hologram at an energy density of 100 GW/cm2 or more with keeping each polarization plane of the two beams in parallel so as to match the converged spot of the two beams temporally and spatially, whereby a hologram is recorded irreversibly on the substrate formed of a transparent material, semiconductor material or metallic material.Type: ApplicationFiled: November 9, 2001Publication date: September 12, 2002Inventors: Hideo Hosono, Masahiro Hirano, Nobuhiko Sarukura, Kenichi Kawamura