Abstract: In production of a titanium alloy spherical powder by a gas atomizing method, the difference in alloy composition depending on the product particle size is reduced economically. To achieve this, sponge titanium particles and additive metal element particles are mixed by means of a mixer having a pulverizing function such as a ball mill. The mixed particles are compressed to form a rod-formed raw material for melting. The formed rod-formed raw material for melting is powderized by a gas atomizing method. In the mixing step, the additive metal element particles are pulverized, or ground depending on the kind of particles, and solidly adhered to the surface of the sponge titanium particles, so that uniform mixing is possible.

Abstract: A high-purity silicon monoxide vapor deposition material which, in the formation of a film by vapor deposition, is effective in inhibiting splashing, and which has an average bulk density of 2.0 g/cml and a Vickers hardness of 500 or higher; a process for producing a high-purity silicon monoxide vapor deposition material consisting of SiO and metal impurities as the remainder, the total amount of the impurities being, 50 ppm or smaller, which comprises conducting a degassing, treatment in a raw-material chamber at a temperature lower than the sublimation temperature of silicon monoxide, raising the temperature to sublimate silicon monoxide, and depositing the silicon monoxide on a substrate in a deposition chamber.

Abstract: In finifsh-cogging a high-purity titanium material into a cylindrical form as the final shape, if cylindrical cogging is performed in all stages of warm forging or if cylindrical cogging is performed in the initial stage of the warm forging, there is no need of peripherally restricting the cylindrical cogging material, so that even if longitudinal upset-forging is effected with an upsetting ratio of 2, the condition that the major diameter/minor diameter ratio of the section after forging is not more than 1.01 can be satisfied, developing superior upset-forgeability. This makes it possible, in producing disk-like targets for sputtering, to minimize cutting loss produced during the rolling and machining and to maximize the yield of products; therefore, the material can be widely used as a semiconductor material for electrodes and the like using a high-purity titanium material.

Abstract: A high-purity silicon monoxide vapor deposition material which, in the formation of a film by vapor deposition, is effective in inhibiting splashino, and which has an average bulk density of 2.0 g/cml and a Vickers hardness of 500 or hiolier; a process for producing a high-purity silicon monoxide vapor deposition mate-rial consisting of SiO and metal impurities as the remainder, the total amount of the impurities beinc, 50 ppm or smaller, which comprises conducting a degassinc, treatment in a raw-material chamber at a temperature lower than the sublimation temperature of silicon monoxide, raising the temperature to sublimate silicon monoxide, and depositing the silicon monoxide on a substrate in a deposition chamber.