Patents by Inventor Nobuhiro ASAJI
Nobuhiro ASAJI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11742251Abstract: A power semiconductor device includes: a power semiconductor element; a control circuit that controls the power semiconductor element; a control substrate having the control circuit mounted thereon; a lid arranged to overlap with at least a portion of the control substrate in a first direction; and at least one external connection terminal having a first portion connected with the control substrate, a second portion to be connected with an external apparatus, and a third portion located between the first portion and the second portion and fixed to the lid, the first portion being constituted as a press-fit portion.Type: GrantFiled: August 14, 2020Date of Patent: August 29, 2023Assignee: Mitsubishi Electric CorporationInventors: Hidetoshi Ishibashi, Yoshitaka Kimura, Minoru Egusa, Nobuhiro Asaji, Kazunari Teshigawara
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Publication number: 20220415738Abstract: A power semiconductor device in which the size of an insulating substrate is reduced and connection failure can be suppressed includes an insulating substrate, a semiconductor element, and a printed circuit board. The semiconductor element is bonded to one main surface of the insulating substrate. The printed circuit board is bonded to face the semiconductor element. The semiconductor element has a main electrode and a signal electrode. The printed circuit board includes a core member, a first conductor layer, and a second conductor layer. The second conductor layer has a bonding pad. The printed circuit board has a missing portion. A metal column portion is arranged to pass through the inside of the missing portion and reach the insulating substrate. The signal electrode and the bonding pad are connected by a metal wire. The metal column portion and the insulating substrate are bonded.Type: ApplicationFiled: November 18, 2020Publication date: December 29, 2022Applicant: Mitsubishi Electric CorporationInventors: Nobuhiro ASAJI, Kazuya OKADA, Hidetoshi ISHIBASHI
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Patent number: 11424178Abstract: A semiconductor module includes: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed wiring board arranged above the insulated circuit board and the semiconductor device and having a through-hole; a metal pile having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion penetrating through the through-hole and bonded to the printed wiring board; a case surrounding the insulated circuit board, the semiconductor device, the printed wiring board and the metal pile; and a sealing material sealing an inside of the case.Type: GrantFiled: April 9, 2020Date of Patent: August 23, 2022Assignee: Mitsubishi Electric CorporationInventors: Satoshi Kondo, Hidetoshi Ishibashi, Hiroshi Yoshida, Nobuhiro Asaji, Junji Fujino, Yusuke Ishiyama, Hodaka Rokubuichi
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Patent number: 11270982Abstract: A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200° C. or higher.Type: GrantFiled: January 30, 2017Date of Patent: March 8, 2022Assignee: Mitsubishi Electric CorporationInventors: Norikazu Sakai, Hiroshi Yoshida, Hidetoshi Ishibashi, Nobuhiro Asaji
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Publication number: 20210134686Abstract: A power semiconductor device includes: a power semiconductor element; a control circuit that controls the power semiconductor element; a control substrate having the control circuit mounted thereon; a lid arranged to overlap with at least a portion of the control substrate in a first direction; and at least one external connection terminal having a first portion connected with the control substrate, a second portion to be connected with an external apparatus, and a third portion located between the first portion and the second portion and fixed to the lid, the first portion being constituted as a press-fit portion.Type: ApplicationFiled: August 14, 2020Publication date: May 6, 2021Applicant: Mitsubishi Electric CorporationInventors: Hidetoshi Ishibashi, Yoshitaka Kimura, Minoru Egusa, Nobuhiro Asaji, Kazunari Teshigawara
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Publication number: 20210066175Abstract: A semiconductor module includes: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed wiring board arranged above the insulated circuit board and the semiconductor device and having a through-hole; a metal pile having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion penetrating through the through-hole and bonded to the printed wiring board; a case surrounding the insulated circuit board, the semiconductor device, the printed wiring board and the metal pile; and a sealing material sealing an inside of the case.Type: ApplicationFiled: April 9, 2020Publication date: March 4, 2021Applicant: Mitsubishi Electric CorporationInventors: Satoshi KONDO, Hidetoshi ISHIBASHI, Hiroshi YOSHIDA, Nobuhiro ASAJI, Junji FUJINO, Yusuke ISHIYAMA, Hodaka ROKUBUICHI
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Publication number: 20190348404Abstract: A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200° C. or higher.Type: ApplicationFiled: January 30, 2017Publication date: November 14, 2019Applicant: Mitsubishi Electric CorporationInventors: Norikazu SAKAI, Hiroshi YOSHIDA, Hidetoshi ISHIBASHI, Nobuhiro ASAJI
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Patent number: 10204886Abstract: A semiconductor device includes semiconductor chips fixed to a board, an insulating plate having a through-hole formed therein, a first lower conductor including a lower main body formed on the lower surface of the insulating plate and soldered to any of the semiconductor chips, and a lower protrusion portion that connects with the lower main body, and extends to the outside of the insulating plate, a second lower conductor formed on a lower surface of the insulating plate and soldered to any of the semiconductor chips, an upper conductor including an upper main body formed on the upper surface of the insulating plate, and an upper protrusion portion that connects with the upper main body and extends to the outside of the insulating plate, and a connection portion provided in the through-hole and connects the upper main body and the second lower conductor.Type: GrantFiled: January 29, 2016Date of Patent: February 12, 2019Assignee: Mitsubishi Electric CorporationInventors: Hiroshi Yoshida, Yuji Imoto, Hidetoshi Ishibashi, Daisuke Murata, Kenta Nakahara, Seiji Oka, Junji Fujino, Nobuhiro Asaji
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Publication number: 20180294253Abstract: A semiconductor device includes semiconductor chips fixed to a board, an insulating plate having a through-hole formed therein, a first lower conductor including a lower main body formed on the lower surface of the insulating plate and soldered to any of the semiconductor chips, and a lower protrusion portion that connects with the lower main body, and extends to the outside of the insulating plate, a second lower conductor formed on a lower surface of the insulating plate and soldered to any of the semiconductor chips, an upper conductor including an upper main body formed on the upper surface of the insulating plate, and an upper protrusion portion that connects with the upper main body and extends to the outside of the insulating plate, and a connection portion provided in the through-hole and connects the upper main body and the second lower conductor.Type: ApplicationFiled: January 29, 2016Publication date: October 11, 2018Applicant: Mitsubishi Electric CorporationInventors: Hiroshi YOSHIDA, Yuji IMOTO, Hidetoshi ISHIBASHI, Daisuke MURATA, Kenta NAKAHARA, Seiji Oka, Junji FUJINO, Nobuhiro ASAJI