Abstract: A negative-electrode active material is used for a negative electrode, the negative-electrode active material including: agglomerated particles including nanometer-size silicon produced by heat treating a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n; and a carbon layer including amorphous carbon, and covering at least some of the agglomerated particles to be composited therewith. An electric storage apparatus including the same is not only able to reduce the irreversible capacity, but also able to inhibit the generation of “SEI.

Abstract: Providing a silicon-containing material having a novel structure being distinct from the structure of conventional silicon oxide disproportionated to use. A silicon-containing material according to the present invention includes at least the following: a continuous phase including silicon with Si—Si bond, and possessing a bubble-shaped skeleton being continuous three-dimensionally; and a dispersion phase including silicon with Si—O bond, and involved in an area demarcated by said continuous phase to be in a dispersed state.

Abstract: Provided is a negative electrode for a nonaqueous secondary battery which achieves both suppression of reductive decomposition of an electrolyte or an electrolytic solution and suppression of an increase in resistance. Also provided are a method for producing such a negative electrode and a nonaqueous secondary battery employing such a negative electrode. A polymer coating layer is formed so as to coat at least part of surfaces of negative electrode active material particles containing silicon oxide (SiOx; 0.5?x?1.6). The polymer coating layer contains a cationic polymer having a positive zeta potential under neutral conditions. Since silicon oxide has a negative zeta potential, a thin uniform coating layer can be formed owing to Coulomb's force.

Abstract: A compound semiconductor contains main constituent elements all of which satisfy the relationship (Cu1-wAw)2(1+a)(Zn1-xBx)1+b(Sn1-yCy)1+c(Sn1-zSez)4(1+d) and having a CZTSX-based compound as a main phase, where ?0.3?a?0.3, ?0.3 ?b?0.3, ?0.3?c?0.3, ?0.3?d?0.3, 0?w<0.5, 0?x <0.5, 0?y<0.5, 0?z<1.0 and 0<x+y+z+w. The element A is at least one element selected from the group consisting of group Ia elements, group IIa elements, group Ib elements (excluding Cu) and group IIb elements. The element B is at least one element selected from the group consisting of group IIa elements and group Ib elements. The element C is at least one element selected from the group consisting of Zn, group IIIb elements and group IVb elements. A compound in which x=y=z=0 and the element A is Ag, and a compound in which x=y=w=0 are_excluded from the formula.

Abstract: A silver or silver alloy thin layer on a substrate is etched by an etching liquid uniformly without producing an etching residue while avoiding side etching due to over etching. The etching liquid contains silver ions in a range from 0.005 to 1 weight %. The etching liquid is fed to a tank or an etching liquid feeding apparatus, and then brought into contact with the silver or silver alloy thin layer on the substrate.

Abstract: A silver or silver alloy thin layer on a substrate is etched by an etching liquid uniformly without producing an etching residue while avoiding side etching due to over etching. The etching liquid contains silver ions in a range from 0.005 to 1 weight %. The etching liquid is fed to a tank or an etching liquid feeding apparatus, and then brought into contact with the silver or silver alloy thin layer on the substrate.