Abstract: A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic solvent; an insulating film which comprises a layer of a resin comprising as a main structure a polybenzoxazole which is obtained by treating the above material or the above coating varnish by heating so that condensation reaction and crosslinking reaction take place and has fine pores; and a semiconductor device which comprises an insulating interlayer film for multi-layer wiring comprising the insulating film and/or a surface protective film comprising the insulating film. Excellent electrical, thermal and mechanical properties are exhibited and a low permittivity can be achieved.

Abstract: A novel aromatic carboxylic acid useful as a material for macromolecular compounds and, in particular, for polycondensed macromolecular compounds exhibiting excellent heat resistance, an acid halide derivative thereof and a process for producing these compounds are disclosed. The aromatic carboxylic acid and the acid halide derivative thereof have structures represented general formulae (1) and (2), respectively, and can be efficiently produced from a dialkyl ester derivative of isophthalic acid and an acetylene derivative in accordance with the disclosed process comprising specific steps. In the above formulae, A represents: —C?C—R1??(a) or (R1 represents hydrogen atom, an alkyl group or an aromatic group, R2 represents an alkyl group or an aromatic group) and X represents a halogen atom.

Abstract: A novel aromatic carboxylic acid useful as a material for macromolecular compounds and, in particular, for polycondensed macromolecular compounds exhibiting excellent heat resistance, an acid halide derivative thereof and a process for producing these compounds are disclosed. The aromatic carboxylic acid and the acid halide derivative thereof have structures represented general formulae (1) and (2), respectively, and can be efficiently produced from a dialkyl ester derivative of isophthalic acid and an acetylene derivative in accordance with the disclosed process comprising specific steps.

Abstract: A material for an insulating film which comprises a copolymer obtained by reacting a polyamide having a specific structure and a reactive oligomer as a component forming the film; a coating varnish for an insulating film which comprises this material and an organic solvent; an insulating film which comprises a layer of a resin comprising as a main structure a polybenzoxazole which is obtained by treating the above material or the above coating varnish by heating so that condensation reaction and crosslinking reaction take place and has fine pores; and a semiconductor device which comprises an insulating interlayer film for multi-layer wiring comprising the insulating film and/or a surface protective film comprising the insulating film. Excellent electrical, thermal and mechanical properties are exhibited and a low permittivity can be achieved.

Abstract: A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film. The precursor exhibits excellent processability due to excellent solubility in solvents and, after the ring closure, excellent heat stability in applications. The resin exhibits excellent electric, physical and mechanical properties and is advantageously used for insulating interlayer films of semiconductor devices and the like applications.

Abstract: The present invention provides an insulating material showing excellent thermal propeties and electrical properties in semiconductor applications.

Abstract: A precursor of a polybenzoxazole resin which comprises a crosslinking group in a molecule and has a specific structure, a polybenzoxazole resin obtained from the precursor by the condensation reaction and the crosslinking reaction, an insulating film comprising the polybenzoxazole resin and a semiconductor device comprising an insulating interlayer film in multi-layer wiring or a film for protecting surfaces which comprises the above insulating film.

Abstract: A polybenzoxazole precursor having recurring units represented by the following general formula (1) and a polybenzoxazole resin having a structure obtained by cyclizing the polybenzoxazole precursor: wherein n denotes an integer of 1-1000, and (i) when X is selected from bivalent aromatic groups represented by the general formulas (2)-(4) defined in the specification each having two OR groups (Rs each denotes H or a monovalent organic group and may be the same or different), and the amide group in the formula (1) and the OR group respectively bond to the adjacent carbon atoms of the aromatic group, Y denotes a bivalent organic group containing fluorine; and (ii) when Y is selected from bivalent aromatic groups represented by the general formulas (5)-(7) defined in the specification, X denotes a bivalent aromatic group containing fluorine and having two OR groups (Rs each denotes H or a monovalent organic group and may be the same or different), and the amide group in the formula (1) and the