Patents by Inventor Nobuhiro Kanai

Nobuhiro Kanai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reactor with accurate temperature control
    Patent number: 9268346
    Abstract: Disclosed herein is a reactor including, a plurality of reaction regions, and a plurality of heaters, each arranged in each of the reaction regions, wherein the heater including a semiconductor heat generating element and a semiconductor temperature detecting element and being capable of independent temperature control, and the temperature detecting element having a heat conduction region of metal thin film in its surrounding region.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: February 23, 2016
    Assignee: Sony Corporation
    Inventors: Toshiki Moriwaki, Nobuhiro Kanai, Takanori Anaguchi
  • REACTOR
    Publication number: 20090258413
    Abstract: Disclosed herein is a reactor including, a plurality of reaction regions, and a plurality of heaters, each arranged in each of the reaction regions, wherein the heater including a semiconductor heat generating element and a semiconductor temperature detecting element and being capable of independent temperature control, and the temperature detecting element having a heat conduction region of metal thin film in its surrounding region.
    Type: Application
    Filed: April 13, 2009
    Publication date: October 15, 2009
    Applicant: Sony Corporation
    Inventors: Toshiki Moriwaki, Nobuhiro Kanai, Takaki Anaguchi
  • Method of producing semiconductor device with a buried layer
    Patent number: 5696004
    Abstract: A method of producing a semiconductor device having a high concentration N-type buried layer on a P-type silicon substrate, the buried layer being covered with a P-type silicon epitaxial layer. The method comprises forming a P-type high concentration layer at a surface portion of the silicon substrate in a region in which no N-type buried layer is to be formed, thereby preventing an inversion layer from being formed at the boundary between the silicon substrate and the epitaxial layer.
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: December 9, 1997
    Assignee: Nissan Motor Co., Ltd.
    Inventor: Nobuhiro Kanai