Abstract: A liquid delivery pump delivers a liquid with high flow rate accuracy in consideration of solvent expansion, pressure dependent leakage of the solvent, and flow rate dependent leakage of the solvent. A liquid delivery pump includes first and second plunger pumps connected together, having respective first and second plungers. A pressure sensor measures a liquid delivery pressure (P2) from the second plunger pump, and a controller controls the driving of the first and second plungers. The controller obtains a moving speed (v1) of the first plunger and a moving speed (v2) of the second plunger using a parameter (C1, C0) depending on the liquid delivery pressures (P1, P2), the liquid delivery pressure, and a target flow rate of the liquid. The parameter (C1, C0) is a parameter of an expression representing a relationship between the liquid delivery pressure (P2) and a flow rate (Q0) of the liquid.

Abstract: Disclosed herein is a reactor including, a plurality of reaction regions, and a plurality of heaters, each arranged in each of the reaction regions, wherein the heater including a semiconductor heat generating element and a semiconductor temperature detecting element and being capable of independent temperature control, and the temperature detecting element having a heat conduction region of metal thin film in its surrounding region.

Abstract: Disclosed herein is a reactor including, a plurality of reaction regions, and a plurality of heaters, each arranged in each of the reaction regions, wherein the heater including a semiconductor heat generating element and a semiconductor temperature detecting element and being capable of independent temperature control, and the temperature detecting element having a heat conduction region of metal thin film in its surrounding region.

Abstract: A method of producing a semiconductor device having a high concentration N-type buried layer on a P-type silicon substrate, the buried layer being covered with a P-type silicon epitaxial layer. The method comprises forming a P-type high concentration layer at a surface portion of the silicon substrate in a region in which no N-type buried layer is to be formed, thereby preventing an inversion layer from being formed at the boundary between the silicon substrate and the epitaxial layer.