Patents by Inventor Nobuhiro Kawai
Nobuhiro Kawai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145496Abstract: Imaging devices and ranging devices are disclosed. In one example, an imaging device includes a semiconductor substrate, a first pixel array, a second pixel array, and a control unit. In the first pixel array, a first light receiving pixel on the semiconductor substrate has a stacked structure of a first electrode, a photoelectric conversion layer, and a second electrode (80). It photoelectrically converts light in a first wavelength region including the visible light region. In the second pixel array, a second light receiving pixel is provided at a position overlapping the first light receiving pixel in a thickness direction of the semiconductor substrate. It photoelectrically converts light in a second wavelength region including the infrared light region. The control unit drives and controls the second pixel array based on a signal photoelectrically converted by the first pixel array.Type: ApplicationFiled: February 22, 2022Publication date: May 2, 2024Inventors: Hideaki Togashi, Kaori Takimoto, Masahiro Segami, Kei Nakagawa, Nobuhiro Kawai
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Patent number: 11945802Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.Type: GrantFiled: May 19, 2022Date of Patent: April 2, 2024Assignees: MIYOSHI OIL & FAT CO., LTD., TOKAI OPTICAL CO., LTD.Inventors: Koji Kawai, Kotaro Kaneko, Nobuhiro Kaneko, Yuichi Shishino, Kuniyoshi Okamoto
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Publication number: 20240053447Abstract: A highly functional photoelectric conversion element is provided.Type: ApplicationFiled: December 3, 2021Publication date: February 15, 2024Inventors: Tomohiro OHKUBO, Hitoshi TSUNO, Hideaki TOGASHI, Masayuki KURITA, Syuto TAMURA, Tetsuro TAKADA, Nobuhiro KAWAI, Tomoki HIRAMATSU, Masahiro JOEI, Kenichi MURATA, Hideki TSUJIAI
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Publication number: 20240032316Abstract: Light reduction in a wiring part connected to an optical device of an electronic device including the optical device is prevented. The electronic device includes an insulating layer, an interlayer connection wiring, and an upper layer wiring. The insulating layer is disposed adjacent to the lower layer wiring and includes a through hole. The interlayer connection wiring is a transparent wiring that is connected to the lower layer wiring in the through hole and is formed into a shape extending to a surface side of the insulating layer. The upper layer wiring is a transparent wiring that is stacked and connected to the interlayer connection wiring extending to the surface side of the insulating layer.Type: ApplicationFiled: December 8, 2021Publication date: January 25, 2024Inventors: HITOSHI TSUNO, HIDEAKI TOGASHI, TOMOHIRO OHKUBO, MASAYUKI KURITA, SYUTO TAMURA, NOBUHIRO KAWAI, TOMOKI HIRAMATSU, MASAHIRO JOEI, KENICHI MURATA, HIDEKI TSUJIAI, TETSURO TAKADA
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Publication number: 20240007764Abstract: A solid-state imaging element that includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode being electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Inventor: NOBUHIRO KAWAI
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Publication number: 20240006426Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.Type: ApplicationFiled: September 19, 2023Publication date: January 4, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki TOGASHI, Tetsuji YAMAGUCHI, Nobuhiro KAWAI, Koji SEKIGUCHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA, Yuta HASEGAWA, Yoshito NAGASHIMA
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Publication number: 20230403871Abstract: The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged in a matrix, in which each of the pixels includes a first semiconductor layer, a photoelectric conversion section disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring extending from the second surface of the first semiconductor layer, a floating diffusion region connected to the first semiconductor layer via the wiring, and a first gate electrode disposed close to the wiring.Type: ApplicationFiled: September 15, 2021Publication date: December 14, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tomoki HIRAMATSU, Hideaki TOGASHI, Nobuhiro KAWAI
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Patent number: 11817466Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.Type: GrantFiled: June 17, 2020Date of Patent: November 14, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Hideaki Togashi, Tetsuji Yamaguchi, Nobuhiro Kawai, Koji Sekiguchi, Masahiro Joei, Kenichi Murata, Shintarou Hirata, Yuta Hasegawa, Yoshito Nagashima
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Patent number: 11812170Abstract: A solid-state imaging element that includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode being electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, a and third wiring electrically connecting the amplification transistor and the selection transistor.Type: GrantFiled: August 16, 2022Date of Patent: November 7, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Nobuhiro Kawai
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Publication number: 20230343807Abstract: A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.Type: ApplicationFiled: April 3, 2023Publication date: October 26, 2023Inventors: Nobuhiro KAWAI, Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO
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Patent number: 11621290Abstract: A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.Type: GrantFiled: June 8, 2018Date of Patent: April 4, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Nobuhiro Kawai, Hideaki Togashi, Fumihiko Koga, Tetsuji Yamaguchi, Shintarou Hirata, Taiichiro Watanabe, Yoshihiro Ando
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Publication number: 20230013285Abstract: A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.Type: ApplicationFiled: December 14, 2020Publication date: January 19, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuhi YORIKADO, Yoshiki EBIKO, Suzunori ENDO, Nobuhiro KAWAI, Fumihiko KOGA, Nobuo NAKAMURA, Sozo YOKOGAWA, Hayato WAKABAYASHI
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Publication number: 20230018449Abstract: A photoelectric converter according to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section.Type: ApplicationFiled: September 16, 2022Publication date: January 19, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Nobuhiro KAWAI, Hirokazu SHIBUTA
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Publication number: 20230005993Abstract: A solid-state imaging element according to the present disclosure includes a photoelectric conversion layer, a first insulating layer (101), and a second insulating layer (102). The photoelectric conversion layer (photoelectric conversion film PD) includes an insulating film (GFa), a charge storage layer (203), and a photoelectric conversion film (PD) stacked between a first electrode (201) and a second electrode (202). The first insulating layer (101) is provided with gates of some pixel transistors in which the charge storage layer serves as a source, a drain, and a channel in a plurality of pixel transistors that processes signal charges photoelectrically converted by the photoelectric conversion film (PD). The second insulating layer (102) is provided with a pixel transistor other than the some pixel transistors in the plurality of pixel transistors.Type: ApplicationFiled: October 6, 2020Publication date: January 5, 2023Inventor: Nobuhiro KAWAI
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Publication number: 20220392931Abstract: A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit.Type: ApplicationFiled: November 2, 2020Publication date: December 8, 2022Inventors: YUKIO KANEDA, HIDEAKI TOGASHI, FUMIHIKO KOGA, MASAHIRO JOEI, KENICHI MURATA, SHINTAROU HIRATA, NOBUHIRO KAWAI
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Publication number: 20220394198Abstract: A solid-state imaging element of the present disclosure has arranged inside a pixel: a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit; a reset transistor that selectively applies a reset voltage to the charge accumulation unit; an amplification transistor having a gate electrode being electrically connected to the charge accumulation unit; and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes: first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor; second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring; and third wiring electrically connecting the amplification transistor and the selection transistor.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Inventor: NOBUHIRO KAWAI
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Publication number: 20220375969Abstract: To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.Type: ApplicationFiled: December 3, 2020Publication date: November 24, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuhi YORIKADO, Yoshiki EBIKO, Suzunori ENDO, Nobuhiro KAWAI, Fumihiko KOGA, Nobuo NAKAMURA, Sozo YOKOGAWA, Hayato WAKABAYASHI
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Publication number: 20220373653Abstract: In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.Type: ApplicationFiled: December 11, 2020Publication date: November 24, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Nobuo NAKAMURA, Yoshiki EBIKO, Suzunori ENDO, Nobuhiro KAWAI, Fumihiko KOGA, Sozo YOKOGAWA, Yuhi YORIKADO, Hayato WAKABAYASHI
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Patent number: 11503235Abstract: A solid-state imaging element of the present disclosure a pixel. The pixel includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.Type: GrantFiled: October 19, 2020Date of Patent: November 15, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Nobuhiro Kawai
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Patent number: 11469262Abstract: A photoelectric converter According to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section.Type: GrantFiled: December 10, 2018Date of Patent: October 11, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Nobuhiro Kawai, Hirokazu Shibuta