Patents by Inventor Nobuhiro Matsudaira

Nobuhiro Matsudaira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170211830
    Abstract: An air-conditioning planning unit: obtains air-conditioning control plan options indicating setting values for air-conditioning, a first room temperature of a space at a first control time, and a first air-conditioning power usage consumed at the first control time; calculates a second room temperature at a second control time with a first function whose explanatory variables include the first room temperature, the first air-conditioning power usage, and at least one of the options; calculates, for each of the options, room temperature and air-conditioning power usage in a time series by calculating a second air-conditioning power usage at the second control time with a second function whose explanatory variables include the first room temperature, the first air-conditioning power usage, and at least one of the options; calculates an evaluation indicator to evaluate a comfort level and cost; and selects an air-conditioning control plan from the options based on the evaluation indicator.
    Type: Application
    Filed: December 12, 2016
    Publication date: July 27, 2017
    Applicant: HITACHI INFORMATION & TELECOMMUNICATION ENGINEERING, LTD.
    Inventors: Tadayoshi KOSAKA, Nobuhiro MATSUDAIRA, Isao KOBAYASHI, Yasutaka SATAKE, Kazuhiko KOYANAGI
  • Patent number: 7738845
    Abstract: The present invention provides electronic parts for amplifying high frequency power capable of expanding a dynamic range of an output power detection circuit, obtaining a continuous detection output having no inflexion point from a low region of output power to its high region and thereby improving controllability of the output power. In a wireless communication system which controls output power of a high frequency power amplifier, based on an output power detection signal and a signal indicative of an output level, an output power detection circuit is provided with a multi-stage configured amplifier which amplifies a high frequency signal taken out via a coupler and capacitive elements. Further, a plurality of detection circuits which detect outputs of amplifiers of respective stages, and a detection circuit which detects the high frequency signal without passing through the multi-stage configured amplifier are provided.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: June 15, 2010
    Assignees: Renesas Technology, Hitachi Hybrid Network Co., Ltd.
    Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Takashi Yokoi
  • Patent number: 7595694
    Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.
    Type: Grant
    Filed: February 19, 2008
    Date of Patent: September 29, 2009
    Assignee: Renesas Technology Corp.
    Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
  • Publication number: 20080150637
    Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.
    Type: Application
    Filed: February 19, 2008
    Publication date: June 26, 2008
    Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
  • Patent number: 7352244
    Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: April 1, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
  • Patent number: 7215203
    Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: May 8, 2007
    Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.
    Inventors: Yoshikuni Matsunaga, Toshihiko Shimizu, Tomio Furuya, Nobuhiro Matsudaira, Koichi Matsushita
  • Publication number: 20070066250
    Abstract: The present invention provides electronic parts for amplifying high frequency power capable of expanding a dynamic range of an output power detection circuit, obtaining a continuous detection output having no inflexion point from a low region of output power to its high region and thereby improving controllability of the output power. In a wireless communication system which controls output power of a high frequency power amplifier, based on an output power detection signal and a signal indicative of an output level, an output power detection circuit is provided with a multi-stage configured amplifier which amplifies a high frequency signal taken out via a coupler and capacitive elements. Further, a plurality of detection circuits which detect outputs of amplifiers of respective stages, and a detection circuit which detects the high frequency signal without passing through the multi-stage configured amplifier are provided.
    Type: Application
    Filed: September 21, 2006
    Publication date: March 22, 2007
    Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Takashi Yokoi
  • Patent number: 7173492
    Abstract: The present invention provides a high frequency amplifier suitable for use in a wireless communication system which performs detection of an output level necessary for feedback control by a current detection system, wherein control sensitivity in an area low in transmit request level is lowered so that an output level can be controlled over the whole control range with satisfactory accuracy. There is provided a high frequency power amplification electric part constituting a wireless communication system, which performs detection of an output level necessary for feedback control of output power by a current detection system, compares the output level detected signal and an output level designation signal and generates a bias voltage for a high frequency power amplifier according to the difference therebetween to thereby control gain, wherein an nth root converter or a logarithm converter is provided between a current detector and a current-voltage converter.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: February 6, 2007
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems. Co., Ltd., Hitachi Hybrid Network Co., Ltd.
    Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Hitoshi Akamine
  • Patent number: 7113034
    Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
    Type: Grant
    Filed: May 5, 2005
    Date of Patent: September 26, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
  • Publication number: 20060197600
    Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.
    Type: Application
    Filed: May 1, 2006
    Publication date: September 7, 2006
    Inventors: Yoshikuni Matsunaga, Toshihiko Shimizu, Tomio Furuya, Nobuhiro Matsudaira, Koichi Matsushita
  • Publication number: 20060192616
    Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 31, 2006
    Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
  • Patent number: 7078974
    Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: July 18, 2006
    Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.
    Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
  • Patent number: 7049892
    Abstract: A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: May 23, 2006
    Assignees: Renesas Technology Corp., Hitachi Communications Systems, Inc.
    Inventors: Yoshikuni Matsunaga, Toshihiko Shimizu, Tomio Furuya, Nobuhiro Matsudaira, Koichi Matsushita
  • Publication number: 20060012435
    Abstract: The present invention provides a high frequency amplifier suitable for use in a wireless communication system which performs detection of an output level necessary for feedback control by a current detection system, wherein control sensitivity in an area low in transmit request level is lowered so that an output level can be controlled over the whole control range with satisfactory accuracy. There is provided a high frequency power amplification electric part constituting a wireless communication system, which performs detection of an output level necessary for feedback control of output power by a current detection system, compares the output level detected signal and an output level designation signal and generates a bias voltage for a high frequency power amplifier according to the difference therebetween to thereby control gain, wherein an nth root converter or a logarithm converter is provided between a current detector and a current-voltage converter.
    Type: Application
    Filed: September 22, 2005
    Publication date: January 19, 2006
    Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Hitoshi Akamine
  • Publication number: 20060006944
    Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
    Type: Application
    Filed: September 16, 2005
    Publication date: January 12, 2006
    Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
  • Patent number: 6972626
    Abstract: The present invention provides a high frequency amplifier suitable for use in a wireless communication system which performs detection of an output level necessary for feedback control by a current detection system, wherein control sensitivity in an area low in transmit request level is lowered so that an output level can be controlled over the whole control range with satisfactory accuracy. There is provided a high frequency power amplification electric part constituting a wireless communication system, which performs detection of an output level necessary for feedback control of output power by a current detection system, compares the output level detected signal and an output level designation signal and generates a bias voltage for a high frequency power amplifier according to the difference therebetween to thereby control gain, wherein an nth root converter or a logarithm converter is provided between a current detector and a current-voltage converter.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: December 6, 2005
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd., Hitachi Hybrid Network Co., Ltd.
    Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Hitoshi Akamine
  • Patent number: 6967535
    Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: November 22, 2005
    Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.
    Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
  • Publication number: 20050200407
    Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
    Type: Application
    Filed: May 5, 2005
    Publication date: September 15, 2005
    Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
  • Publication number: 20050156672
    Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
    Type: Application
    Filed: March 15, 2005
    Publication date: July 21, 2005
    Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
  • Patent number: 6914480
    Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
    Type: Grant
    Filed: May 19, 2004
    Date of Patent: July 5, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama