Patents by Inventor Nobuhiro Matsudaira
Nobuhiro Matsudaira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170211830Abstract: An air-conditioning planning unit: obtains air-conditioning control plan options indicating setting values for air-conditioning, a first room temperature of a space at a first control time, and a first air-conditioning power usage consumed at the first control time; calculates a second room temperature at a second control time with a first function whose explanatory variables include the first room temperature, the first air-conditioning power usage, and at least one of the options; calculates, for each of the options, room temperature and air-conditioning power usage in a time series by calculating a second air-conditioning power usage at the second control time with a second function whose explanatory variables include the first room temperature, the first air-conditioning power usage, and at least one of the options; calculates an evaluation indicator to evaluate a comfort level and cost; and selects an air-conditioning control plan from the options based on the evaluation indicator.Type: ApplicationFiled: December 12, 2016Publication date: July 27, 2017Applicant: HITACHI INFORMATION & TELECOMMUNICATION ENGINEERING, LTD.Inventors: Tadayoshi KOSAKA, Nobuhiro MATSUDAIRA, Isao KOBAYASHI, Yasutaka SATAKE, Kazuhiko KOYANAGI
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Patent number: 7738845Abstract: The present invention provides electronic parts for amplifying high frequency power capable of expanding a dynamic range of an output power detection circuit, obtaining a continuous detection output having no inflexion point from a low region of output power to its high region and thereby improving controllability of the output power. In a wireless communication system which controls output power of a high frequency power amplifier, based on an output power detection signal and a signal indicative of an output level, an output power detection circuit is provided with a multi-stage configured amplifier which amplifies a high frequency signal taken out via a coupler and capacitive elements. Further, a plurality of detection circuits which detect outputs of amplifiers of respective stages, and a detection circuit which detects the high frequency signal without passing through the multi-stage configured amplifier are provided.Type: GrantFiled: September 21, 2006Date of Patent: June 15, 2010Assignees: Renesas Technology, Hitachi Hybrid Network Co., Ltd.Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Takashi Yokoi
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Patent number: 7595694Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.Type: GrantFiled: February 19, 2008Date of Patent: September 29, 2009Assignee: Renesas Technology Corp.Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
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Publication number: 20080150637Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.Type: ApplicationFiled: February 19, 2008Publication date: June 26, 2008Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
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Patent number: 7352244Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.Type: GrantFiled: February 24, 2006Date of Patent: April 1, 2008Assignee: Renesas Technology Corp.Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
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Patent number: 7215203Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.Type: GrantFiled: May 1, 2006Date of Patent: May 8, 2007Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.Inventors: Yoshikuni Matsunaga, Toshihiko Shimizu, Tomio Furuya, Nobuhiro Matsudaira, Koichi Matsushita
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Publication number: 20070066250Abstract: The present invention provides electronic parts for amplifying high frequency power capable of expanding a dynamic range of an output power detection circuit, obtaining a continuous detection output having no inflexion point from a low region of output power to its high region and thereby improving controllability of the output power. In a wireless communication system which controls output power of a high frequency power amplifier, based on an output power detection signal and a signal indicative of an output level, an output power detection circuit is provided with a multi-stage configured amplifier which amplifies a high frequency signal taken out via a coupler and capacitive elements. Further, a plurality of detection circuits which detect outputs of amplifiers of respective stages, and a detection circuit which detects the high frequency signal without passing through the multi-stage configured amplifier are provided.Type: ApplicationFiled: September 21, 2006Publication date: March 22, 2007Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Takashi Yokoi
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Patent number: 7173492Abstract: The present invention provides a high frequency amplifier suitable for use in a wireless communication system which performs detection of an output level necessary for feedback control by a current detection system, wherein control sensitivity in an area low in transmit request level is lowered so that an output level can be controlled over the whole control range with satisfactory accuracy. There is provided a high frequency power amplification electric part constituting a wireless communication system, which performs detection of an output level necessary for feedback control of output power by a current detection system, compares the output level detected signal and an output level designation signal and generates a bias voltage for a high frequency power amplifier according to the difference therebetween to thereby control gain, wherein an nth root converter or a logarithm converter is provided between a current detector and a current-voltage converter.Type: GrantFiled: September 22, 2005Date of Patent: February 6, 2007Assignees: Renesas Technology Corp., Hitachi ULSI Systems. Co., Ltd., Hitachi Hybrid Network Co., Ltd.Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Hitoshi Akamine
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Patent number: 7113034Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: GrantFiled: May 5, 2005Date of Patent: September 26, 2006Assignee: Renesas Technology Corp.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Publication number: 20060197600Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.Type: ApplicationFiled: May 1, 2006Publication date: September 7, 2006Inventors: Yoshikuni Matsunaga, Toshihiko Shimizu, Tomio Furuya, Nobuhiro Matsudaira, Koichi Matsushita
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Publication number: 20060192616Abstract: This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.Type: ApplicationFiled: February 24, 2006Publication date: August 31, 2006Inventors: Kyoichi Takahashi, Takayuki Tsutsui, Hitoshi Akamine, Fuminori Morisawa, Nobuhiro Matsudaira
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Patent number: 7078974Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: GrantFiled: September 16, 2005Date of Patent: July 18, 2006Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 7049892Abstract: A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.Type: GrantFiled: May 21, 2004Date of Patent: May 23, 2006Assignees: Renesas Technology Corp., Hitachi Communications Systems, Inc.Inventors: Yoshikuni Matsunaga, Toshihiko Shimizu, Tomio Furuya, Nobuhiro Matsudaira, Koichi Matsushita
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Publication number: 20060012435Abstract: The present invention provides a high frequency amplifier suitable for use in a wireless communication system which performs detection of an output level necessary for feedback control by a current detection system, wherein control sensitivity in an area low in transmit request level is lowered so that an output level can be controlled over the whole control range with satisfactory accuracy. There is provided a high frequency power amplification electric part constituting a wireless communication system, which performs detection of an output level necessary for feedback control of output power by a current detection system, compares the output level detected signal and an output level designation signal and generates a bias voltage for a high frequency power amplifier according to the difference therebetween to thereby control gain, wherein an nth root converter or a logarithm converter is provided between a current detector and a current-voltage converter.Type: ApplicationFiled: September 22, 2005Publication date: January 19, 2006Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Hitoshi Akamine
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Publication number: 20060006944Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: ApplicationFiled: September 16, 2005Publication date: January 12, 2006Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 6972626Abstract: The present invention provides a high frequency amplifier suitable for use in a wireless communication system which performs detection of an output level necessary for feedback control by a current detection system, wherein control sensitivity in an area low in transmit request level is lowered so that an output level can be controlled over the whole control range with satisfactory accuracy. There is provided a high frequency power amplification electric part constituting a wireless communication system, which performs detection of an output level necessary for feedback control of output power by a current detection system, compares the output level detected signal and an output level designation signal and generates a bias voltage for a high frequency power amplifier according to the difference therebetween to thereby control gain, wherein an nth root converter or a logarithm converter is provided between a current detector and a current-voltage converter.Type: GrantFiled: October 10, 2003Date of Patent: December 6, 2005Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd., Hitachi Hybrid Network Co., Ltd.Inventors: Kyoichi Takahashi, Nobuhiro Matsudaira, Hitoshi Akamine
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Patent number: 6967535Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: GrantFiled: March 15, 2005Date of Patent: November 22, 2005Assignees: Renesas Technology Corp., Hitachi Communication Systems, Inc.Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Publication number: 20050200407Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: ApplicationFiled: May 5, 2005Publication date: September 15, 2005Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama
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Publication number: 20050156672Abstract: A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.Type: ApplicationFiled: March 15, 2005Publication date: July 21, 2005Inventors: Kouichi Matsushita, Tomio Furuya, Fuminori Morisawa, Takayuki Tsutsui, Nobuhiro Matsudaira
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Patent number: 6914480Abstract: The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.Type: GrantFiled: May 19, 2004Date of Patent: July 5, 2005Assignee: Renesas Technology Corp.Inventors: Satoshi Arai, Tsuyoshi Shibuya, Hitoshi Sekiguchi, Nobuhiro Matsudaira, Tomio Furuya, Masashi Maruyama, Yasushi Ohyama