Abstract: The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound containing at least one kind of metal selected from the group consisting of Ti, Zr, and Hf; (B) a crosslinking agent containing, per molecule, 2 or more and 4 or fewer cyclic ether structures having 2 to 13 carbon atoms; and (C) a solvent. This can provide: a composition for forming a metal-containing film having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; and a patterning process in which the composition is used.

Abstract: The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms.

Abstract: The present invention is a compound for forming a metal-containing film, containing: at least one metal atom selected from the group consisting of Ti, Zr, and Hf; and a ligand coordinated to the metal atom, where the ligand contains a group represented by any of the following formulae (a-1) to (a-3), where R1 represents a hydrogen atom or an organic group having 1 to 10 carbon atoms, and “*” represents an attachment point. This can provide: a compound for forming a metal-containing film that gives a metal-containing film that makes it possible to obtain an excellent pattern profile, has high adhesiveness to a resist upper layer film, and suppresses fine-pattern collapse in a fine patterning process of a semiconductor device manufacturing process; a composition for forming a metal-containing film, containing the compound; and a patterning process using the composition.

Abstract: The present invention is a compound (A) for forming a metal-containing film, where the compound is derived from a metal-containing compound, being a hydrolysate, condensate, or hydrolysis condensate of a metal compound represented by the following formula (A-1), and the compound (A) further has a ligand derived from an organic compound represented by the following formula (1). This can provide a compound for forming a metal-containing film having better dry etching resistance than those of conventional organic underlayer film materials and also having high filling property and/or high planarizing property.

Abstract: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes an organic group RA represented by one of the following general formulae (1). This provides: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist material.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound is represented by the following general formula (A). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Abstract: The present invention is a composition for forming a metal oxide film including (A) an organic-inorganic composite material and (B) a solvent, (A) the organic-inorganic composite material being a reaction product of a metal source (I) and an organic source (II), the metal source (I) containing one or more compounds derived from a metal compound represented by the general formula (I-1), and the organic source (II) containing a compound having a unit represented by the general formula (II-1) and a cardo structure. The present invention provides a composition for forming a metal oxide film which has excellent coatability relative to a previously-known material for forming a metal oxide film and also has high filling and planarizing properties, a patterning process using the material, and a method for forming a metal oxide film.

Abstract: A fused joint structure comprises a metallic foil; and a conductive member made of high melting point metal, wherein a concave portion is formed in the metallic foil and the conductive member on an area where the metallic foil is put together on a surface of the conductive member, and wherein a circumferential edge of the concave portion is covered with the conductive member.

Abstract: A short arc type discharge lamp comprises a pair of electrodes, at least one of which has an electrode main body portion and an axis portion and/or a taper portion formed between the electrode main body portion and the axis portion, wherein in the at least one of the electrodes, the axis portion has an outer diameter smaller than that of the electrode main body portion, and at least one groove extending in an axis line direction of the electrode is formed in the electrode main body portion, the axis portion or the taper portion.

Abstract: In a high pressure discharge lamp having electrode rods with grooves formed in a part thereof and embedded and sealed in sealing parts of a discharge vessel, breakage of the sealing parts because of the grooves is prevented without impairing the mechanical strength of the electrode rods, in which the grooves are formed, by the high pressure discharge lamp comprising: a discharge vessel having a light emitting part and sealing parts connected to both ends of said light emitting part; and electrodes comprising electrode rods and electrode tip end parts arranged oppositely to each other in the light emitting part, said electrode rods being embedded in a respective one of said sealing parts, and axially directed grooves being formed in at least part of the surface of said electrode rods, wherein a diameter measured at groove bottom parts of the grooves of said electrode rods is larger than a diameter of the electrode rods in a part where no grooves are formed.

Abstract: An extra-high pressure mercury lamp includes an arc tube made of quartz glass. The lamp includes an arc tube portion and sealing portions connected to the arc tube portion, and encloses 0.15 mg/mm3 or more of mercury. A pair of electrodes are disposed face to face in the arc tube. Each electrode has a rod portion and a base end portion. The base end portion of each electrode is embedded in one of the sealing portions. One of the pair of electrodes serves as a cathode and includes a head portion, which has a larger diameter than the rod portion. A cylinder portion is connected to a rear end portion of the head portion. The cylinder portion extends in the axis direction of the electrode and surrounds the rod portion. The cylinder portion has an inner surface separated from the rod portion.

Abstract: A short arc type discharge lamp has a pair of electrodes, at least one of which has an electrode body and an axis part. A taper part is formed at a base side of the electrode body. Plural holes extending in an axis direction of the electrode in line are formed at the taper part.

Abstract: A high pressure discharge lamp having a hermetically sealed portion on opposite sides of an arc tube made of quartz glass and in which a pair of opposed electrodes is located is improved so that electrode rod warping is prevented even when the lamp is repeatedly lit and unlit. Electrode rods extending from the electrodes pass through a center hole in a respective quartz glass body which is positioned and fastened onto each the electrode rods with an infrared reflection membrane composed of a heat-resistant metal being provided on the inner surface of the center hole of the quartz glass body separating the electrode rod from the quartz glass body. The quartz glass body is integrated with the quartz glass forming the hermetically sealed portion and is positioned against a step formed at the boundary between large and small diameter portions of the electrode rod.

Abstract: In a high pressure discharge lamp having electrode rods with grooves formed in a part thereof and embedded and sealed in sealing parts of a discharge vessel, breakage of the sealing parts because of the grooves is prevented without impairing the mechanical strength of the electrode rods, in which the grooves are formed, by the high pressure discharge lamp comprising: a discharge vessel having a light emitting part and sealing parts connected to both ends of said light emitting part; and electrodes comprising electrode rods and electrode tip end parts arranged oppositely to each other in the light emitting part, said electrode rods being embedded in a respective one of said sealing parts, and axially directed grooves being formed in at least part of the surface of said electrode rods, wherein a diameter measured at groove bottom parts of the grooves of said electrode rods is larger than a diameter of the electrode rods in a part where no grooves are formed.

Abstract: A high pressure discharge lamp having a hermetically sealed portion on opposite sides of an arc tube made of quartz glass and in which a pair of opposed electrodes is located is improved so that electrode rod warping is prevented even when the lamp is repeatedly lit and unlit. Electrode rods extending from the electrodes pass through a center hole in a respective quartz glass body which is positioned and fastened onto each the electrode rods with an infrared reflection membrane composed of a heat-resistant metal being provided on the inner surface of the center hole of the quartz glass body separating the electrode rod from the quartz glass body. The quartz glass body is integrated with the quartz glass forming the hermetically sealed portion and is positioned against a step formed at the boundary between large and small diameter portions of the electrode rod.

Abstract: A short arc type discharge lamp has a pair of electrodes, at least one of which has an electrode body and an axis part. A taper part is formed at a base side of the electrode body. Plural holes extending in an axis direction of the electrode in line are formed at the taper part.