Abstract: A fiber laminate includes a first fiber sheet containing first fibers, a second fiber sheet laminated on the first fiber sheet and containing second fibers, and an adhesive interposed between the first fiber sheet and the second fiber sheet. The adhesive is disposed to form a linear first region in the fiber laminate when viewed from a normal direction of a principal surface of the fiber laminate. The first fiber sheet and the second fiber sheet are adhered to each other via the first region. A gap is formed between the first fiber sheet and the second fiber sheet in a second region other than the first region.

Abstract: A fiber laminate includes a first fiber sheet containing first fibers, a second fiber sheet laminated on the first fiber sheet and containing second fibers, and an adhesive interposed between the first fiber sheet and the second fiber sheet. The adhesive is disposed to form a linear first region in the fiber laminate when viewed from a normal direction of a principal surface of the fiber laminate. The first fiber sheet and the second fiber sheet are adhered to each other via the first region. A gap is formed between the first fiber sheet and the second fiber sheet in a second region other than the first region.

Abstract: The plasma processing apparatus is provided with a chamber 11, a plasma source 13 which generates plasma inside the chamber 11, a stage 16 which is provided inside the chamber 11 and places a carrier 5 thereon, a cover 31 which is arranged above the stage 16 to cover a holding sheet 6 and a frame 7 and has a window 33 which is formed on a central part thereof to penetrate the cover 31 in the thickness direction, and a drive mechanism 38 which changes the position of the cover 31 relative to the stage 16 between a first position which is away from the stage 16 and allows the carrier 5 to be placed on and removed from the stage 16 and a second position which allows the cover 31 to cover the holding sheet 6 and the frame 7 of the carrier 5 placed on the stage 16 and a substrate 2 held on the holding sheet 6 to be exposed through the window 33.

Abstract: The plasma processing apparatus is provided with a chamber 11, a plasma source 13 which generates plasma inside the chamber 11, a stage 16 which is provided inside the chamber 11 and places a carrier 5 thereon, a cover 31 which is arranged above the stage 16 to cover a holding sheet 6 and a frame 7 and has a window 33 which is formed on a central part thereof to penetrate the cover 31 in the thickness direction, and a drive mechanism 38 which changes the position of the cover 31 relative to the stage 16 between a first position which is away from the stage 16 and allows the carrier 5 to be placed on and removed from the stage 16 and a second position which allows the cover 31 to cover the holding sheet 6 and the frame 7 of the carrier 5 placed on the stage 16 and a substrate 2 held on the holding sheet 6 to be exposed through the window 33.

Abstract: The plasma processing apparatus is provided with a plasma source 13 which generates plasma inside a chamber 11, a stage 16 which is provided inside the chamber 11 and places a carrier 5 thereon, a cover 31 which is arranged above the stage 16 to cover a holding sheet 6 and a frame 7 and has a window 33 which is formed to penetrate the cover 31 in the thickness direction, and a drive mechanism 38 which changes the position of the cover 31 relative to the stage 16 between a first position and a second position. The second position does not allow the cover 31 to make contact with the holding sheet 6, the frame 7 and a substrate 2. The cover 31 includes at least a ceiling surface 36b which extends in parallel to the upper face of the frame 7 and an inclined surface 36c which is inclined to gradually come close to the upper face of the holding sheet 6 exposed at the inner diameter side of the frame 7.

Abstract: A clamp member capable of reliably releasing sticking to a substrate with a simple structure, a film deposition apparatus and method, and a semiconductor device manufacturing method using the clamp member are provided. A clamp ring includes an inner flange portion, a rotating shaft arranged at the inner flange portion, and a rotating member. The rotating member is rotatable about the rotating shaft, and has front and rear end portions. The rotating member is arranged such that the front end portion is positioned to face a part of the wafer with a space therebetween when the inner flange portion is holding the wafer. When the rear end portion is pressed against the inner flange portion, the rotating member rotates about the rotating shaft, and thus, the front end portion can press the part of the wafer in a direction away from the inner flange portion.

Abstract: Two electrodes are provided in a processing container so as to be opposed to each other. Main etching processing gases of Cl2 and BCl3 are introduced into the processing container, and a deposition-type gas composed by least two of C, H, and F, such as a CHF3 gas or a CF4 gas, is added thereto. A plasma is generated by applying a pulse-modulated high-frequency voltage between the two electrodes that hold a sample to be etched. The sample is etched by using the plasma.