Patents by Inventor Nobuhiro Ohara

Nobuhiro Ohara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor wafer, method for receiving order for manufacture of semiconductor wafer, and system for receiving order for manufacture of semiconductor wafer
    Patent number: 7203559
    Abstract: The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process.
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: April 10, 2007
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Tatsuo Ito, Shigeyoshi Netsu, Masashi Ichikawa, Nobuhiro Ohara
  • Semiconductor wafer manufacturing method, semiconductor wafer mnaufacturing order acceptance method, and semiconductor wafer manufacturing order acceptance system
    Publication number: 20050085017
    Abstract: The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process.
    Type: Application
    Filed: January 22, 2003
    Publication date: April 21, 2005
    Inventors: Tatsuo Ito, Shigeyoshi Netsu, Masashi Ichikawa, Nobuhiro Ohara
  • Method of and apparatus for controlling floating zone of semiconductor rod
    Patent number: 4866230
    Abstract: In a method of controlling a floating zone of a semiconductor rod of the present invention shown in FIG. 1, the diameter D.sub.s at a crystallization boundary of a crystal and the axial length of the floating zone are indirectly controlled by controlling a diameter D.sub.m of a crystallizing-side melt shoulder portion and the diameter D.sub.n of a constricted melt portion, respectively. Since these diameters D.sub.m and D.sub.n are used for predicting D.sub.s and L to be obtained after a given time has passed, the response speed and stability of the control are improved as compared with the direct control of D.sub.s and L. An apparatus for controlling a floating zone of a semiconductor rod of the present invention performs the above-described method. In another method, the zone length is directly or indirectly controlled by regulating a relative moving speed of the melting-side semiconductor rod relative to the heater, and the diameter D.sub.
    Type: Grant
    Filed: December 11, 1987
    Date of Patent: September 12, 1989
    Assignee: Shin-Etu Handotai Company, Limited
    Inventors: Yasuhiro Ikeda, Kunio Suzuki, Masataka Watanabe, Nobuhiro Ohara