Abstract: A magnetic core, containing metal magnetic powder and resin, in which a content of the metal magnetic powder satisfies 60%?(A1/A2)?90%. The metal magnetic powder includes small particles having the Heywood diameter of 1 ?m or less in the cross section of the magnetic core and large particles having the Heywood diameter of 5 ?m or more and less than 40 ?m. An edge-to-edge distance regarding to a distance between the small particles satisfies 5?((L1av/dav)×100)?70. An edge-to-edge distance regarding to a distance between the small particles and the large particles satisfies 0.02 ?m?L2av?0.13 ?m and ??0.25 ?m.

Abstract: The present invention relates to a magnetic core containing soft magnetic powder and a coil component using the magnetic core. The soft magnetic powder has particles each having at least one pore therein, and the number of pores present in a region of 2.5 mm square in a cross section of the magnetic core is 60×(?/80) or more and 10000×(?/80) or less, in which the volume packing density of the soft magnetic powder in the magnetic core is ?%.

Abstract: A magnetic core having a high relative permeability is obtained. The magnetic core contains soft magnetic metal powder particles. In a cross section of the magnetic core, a number ratio of soft magnetic metal powder particles having a circularity of less than 0.50 to a total number of soft magnetic metal powder particles having a particle size of 10 ?m or more and less than 50 ?m is 0.05% or more and 1.50% or less.

Abstract: The present invention relates to a magnetic core containing soft magnetic powder and a coil component using the magnetic core. The soft magnetic powder has particles each having at least one pore therein, and the number of pores present in a region of 2.5 mm square in a cross section of the magnetic core is 60×(?/80) or more and 10000×(?/80) or less, in which the volume packing density of the soft magnetic powder in the magnetic core is ?%.

Abstract: The present invention provides R-T-B based alloy powders, wherein R represents at least one rare earth element, and T represents at least one element selected from the group consisting of ferrum and cobalt. The R-T-B based alloy powders have main phase grains, grain boundary phases and additive phases. The main phase grains are composed of R2T14B and have an average grain size of 200 nm or more and 500 nm or less. The grain boundary phases are richer in R than the main phase grains. With respect to any cross section of the R-T-B based alloy powders, the coverage of the main phase grains defined by equation 1 with the grain boundary phases with a roundness defined by equation 2 being 0.1 or more and 0.6 or less, is 10% or more and 40% or less.

Abstract: The present invention provides R-T-B based alloy powders, wherein R represents at least one rare earth element, and T represents at least one element selected from the group consisting of ferrum and cobalt. The R-T-B based alloy powders have main phase grains, grain boundary phases and additive phases. The main phase grains are composed of R2T14B and have an average grain size of 200 nm or more and 500 nm or less. The grain boundary phases are richer in R than the main phase grains. With respect to any cross section of the R-T-B based alloy powders, the coverage of the main phase grains defined by equation 1 with the grain boundary phases with a roundness defined by equation 2 being 0.1 or more and 0.6 or less, is 10% or more and 40% or less.

Abstract: A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.