Abstract: A light-emitting element and an electronic apparatus capable of reducing the element area and realizing a stable electrical connection. A light-emitting element according to the present technology includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer laminated in this order, and a light-emitting surface, a non-light-emitting surface, and a side surface connecting the light-emitting surface and the non-light-emitting surface. The side surface is inclined. A first electrode is in a concave portion in the light-emitting surface at a periphery of the first semiconductor layer. A second electrode is on a non-light-emitting surface side of the laminate. A third electrode is on the non-light-emitting surface side of the laminate and is insulated from the second electrode. The side wiring electrically connects the first electrode and the third electrode via the side surface.

Abstract: In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion formed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.

Abstract: In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion formed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.