Abstract: An etching method includes: forming a protective film by supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate including a surface on which a first film and a second film are formed, each of which has a property of being etched by an etching gas, wherein the protective film covers the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed.

Abstract: An actuator includes a holder, a case, a support assembly, a first magnet, a second magnet, and a coil. The holder includes a sphere centered at a reference point and houses an optical module. The case houses the holder. The support assembly is in the case and supports the holder in a manner rotatable about the reference point. The first magnet is on a portion of the sphere in a first radial direction from the reference point. The second magnet is on a portion of the sphere in a second radial direction from the reference point. The coil is in the case and is energized to generate a magnetic field acting on the first magnet and the second magnet. The first magnet and the second magnet are located asymmetric to each other with respect to the reference point and have different lengths in a circumferential direction of the holder.

Abstract: An apparatus is provided for detaching substrate components such as electronic components mounted on a substrate. The apparatus has a screw blade roller having a screw blade attached to a rotary shaft of the screw blade roller, wherein the apparatus causes the screw blade roller to come into contact with the electronic components mounted on the substrate and detaches the electronic components while the screw blade roller rotates. In the apparatus, two or more screw blades are arranged, and the winding direction of the screw blade(s) in one side of the screw blade roller is opposite to the winding direction of the screw blade(s) in the other side of the screw blade roller. Also, the screw blade roller is placed at a front side of the substrate where many components are typically mounted. A feed roller supporting a rear side of the substrate is placed at the rear side of the substrate.

Abstract: A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

Abstract: A power conversion device includes: a housing including a floor, a ceiling, a front face; an input circuit part; a power conversion unit; a reactor; an output circuit; and an output terminal. These elements are arranged in a planar direction of the front face so as not to overlap each other. The input circuit part is provided above the floor, the output circuit part is provided below the ceiling and above the input circuit part, and the power conversion unit is provided above the input circuit part between the input circuit part and the output circuit part. The reactor is provided beside or above the power conversion unit between the input circuit part and the output circuit part. The input circuit part, the power conversion unit, the reactor, the output circuit part, and the output terminal are connected in series in this order through metal bus bars.

Abstract: An etching method for performing side-etching of silicon germanium layers of a substrate having alternating silicon layers and the silicon germanium layers formed thereon is provided. The method includes modifying surfaces of residuals by supplying a plasmarized gas containing hydrogen to the residuals on exposed end surfaces of the silicon germanium layers, and performing side-etching on the silicon germanium layers by supplying a fluorine-containing gas to the silicon germanium layers.

Abstract: An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film.

Abstract: A method of processing a substrate in which a silicon layer and a silicon germanium layer are alternately stacked one above another, includes: forming an oxide film by selectively oxidizing a surface layer of an exposed surface of the silicon germanium layer using a gas containing fluorine and oxygen radicalized with a remote plasma; and removing the oxide film.

Abstract: A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.

Abstract: An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

Abstract: An etching method includes: accommodating a substrate having a recess formed by a sidewall, which is a germanium-containing film, into a processing container; etching the sidewall by supplying an etching gas including a first fluorine-containing gas and a second fluorine-containing gas into the processing container; and controlling a shape of the sidewall after etching by, in the etching the sidewall, adjusting a partial pressure of the first fluorine-containing gas in the processing container, or a ratio of a flow rate of the second fluorine-containing gas to a flow rate of the first fluorine-containing gas supplied into the processing container.

Abstract: A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

Abstract: A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.

Abstract: An etching method includes: forming a protective film by supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate including a surface on which a first film and a second film are formed, each of which has a property of being etched by an etching gas, wherein the protective film covers the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed.

Abstract: An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.

Abstract: A technique for making etching amounts uniform in selectively etching SiGe layers formed on a wafer with respect to at least one of an Si layer, an SiO2 layer, and an SiN layer is provided. In an etching process where SiGe layers in a wafer W in which the SiGe layers and Si layers are alternately stacked and exposed in a recess are removed by side etching, ClF3 gas and HF gas are simultaneously supplied to the wafer W. Accordingly, it is possible to make the etching rates for respective SiGe layers uniform, and it becomes possible to obtain a uniform etching amount for respective SiGe layers.

Abstract: An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an etching residue. The step of removing the CF-based deposit includes a step of forming an oxide including an oxide of the CF-based deposit using oxygen-containing radicals, and a step of removing the generated oxide by radical processing or chemical processing using gas.

Abstract: A power conversion device includes: a casing including a housing portion; a circuit board housed in the housing portion, the circuit board including an inverter circuit or an inverter control circuit configured to control the inverter circuit; a cooling fan configured to generate air flowing through the housing portion to cool the circuit board; a temperature sensor configured to sense a temperature inside or outside the casing; and a cooling fan control circuit configured to drive the cooling fan. The cooling fan control circuit is configured to, if the temperature sensed by the temperature sensor is higher than a predetermined temperature, turn on the cooling fan, and if the sensed temperature is equal to or below the predetermined temperature, control the cooling fan to turn off the cooling fan or make a speed of the flowing air lower than a speed when the cooling fan is in the on state.

Abstract: An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

Abstract: A power conversion device capable of suppressing air from flowing back into a housing is provided. The power conversion device includes a power conversion unit configured to perform power conversion, a housing for accommodating the power conversion and having an air inlet and an air outlet, a fan provided inside the housing and generating airflow in such a manner that air flows to the outside of the housing via the air outlet after flowing into the housing via the air inlet, and a cover provided at the air outlet, the cover being configured to be brought into an opened state with respect to the air outlet if the airflow generated by the fan is stronger than airflow moving from the outside of the housing toward the air outlet, and to be brought into a closed state with respect to the air outlet if the airflow generated by the fan is weaker than the airflow moving from the outside of the housing toward the exhaust of the housing.