Abstract: A light-emitting device includes a substrate including a substrate second upper surface provided between a substrate bottom surface and a substrate first upper surface in a height direction. A light-emitting element to emit ultraviolet light is provided on the substrate first upper surface. A protective element includes a protective element upper surface provided between the substrate first upper surface and the substrate second upper surface in the height direction. A frame is bonded to the substrate first upper surface via adhesive members to surround the light-emitting element. The frame includes a frame lower surface opposite to the substrate first upper surface and the substrate second upper surface in the height direction to provide a gap between the substrate first upper surface and the frame lower surface. A space in which the light-emitting element is provided communicates with an outside of the light-emitting device via the gap.

Abstract: A light-emitting device includes a substrate including a substrate second upper surface provided between a substrate bottom surface and a substrate first upper surface in a height direction. A light-emitting element to emit ultraviolet light is provided on the substrate first upper surface. A protective element includes a protective element upper surface provided between the substrate first upper surface and the substrate second upper surface in the height direction. A frame is bonded to the substrate first upper surface via adhesive members to surround the light-emitting element. The frame includes a frame lower surface opposite to the substrate first upper surface and the substrate second upper surface in the height direction to provide a gap between the substrate first upper surface and the frame lower surface. A space in which the light-emitting element is provided communicates with an outside of the light-emitting device via the gap.

Abstract: A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Abstract: A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Abstract: A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.

Abstract: Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13. The active layer 12 comprises a first well layer 14, second well layers 15 interposing the first well layer 14 and disposed at outermost sides among the well layers, and barrier layers 16, 17 disposed between each of the well layers. The second well layer 15 comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer 14, and the nitride semiconductor light emitting element 1 has peaks in the emission spectrum respectively corresponding to the first well layer 14 and the second well layer 15.

Abstract: Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13. The active layer 12 comprises a first well layer 14, second well layers 15 interposing the first well layer 14 and disposed at outermost sides among the well layers, and barrier layers 16, 17 disposed between each of the well layers. The second well layer 15 comprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer 14, and the nitride semiconductor light emitting element 1 has peaks in the emission spectrum respectively corresponding to the first well layer 14 and the second well layer 15.