Abstract: A relay includes a first relay unit and a second relay unit provided between an outdoor unit and an indoor unit to allow refrigerant to circulate between the first relay unit and the outdoor unit and between the second relay unit and the outdoor unit, and a heat medium circuit connecting the first relay unit and the second relay unit to the indoor unit to allow a heat medium to circulate through the heat medium circuit. The second relay unit is installed above or on a top of the first relay unit.

Abstract: An air-conditioning system comprising: a heat source side unit; a use side unit; a relay unit; a refrigerant circuit; a water circuit; a controller configured to operate in a trial operation mode, and configured to operate in a normal operation mode; a first setting unit; a second setting unit; and a third setting unit, wherein the controller is configured to invalidate an error that occurs in the water circuit when the trial operation mode is set, a target for the trial operation in the trial operation mode is set to the refrigerant circuit, and invalidation of an error is set to be active, and invalidate an error that occurs in the refrigerant circuit when the trial operation mode is set, a target for the trial operation in the trial operation mode is set to the water circuit, and invalidation of an error is set to be active.

Abstract: A relay includes a first relay unit and a second relay unit provided between an outdoor unit and an indoor unit to allow refrigerant to circulate between the first relay unit and the outdoor unit and between the second relay unit and the outdoor unit, and a heat medium circuit connecting the first relay unit and the second relay unit to the indoor unit to allow a heat medium to circulate through the heat medium circuit. The second relay unit is installed above or on a top of the first relay unit.

Abstract: Disclosed are methods for screening a drug for treating obesity-related diseases by using the ability of candidate drugs to inhibit the function of pentraxin-4 as an index, and a pharmaceutical composition for treating obesity-related diseases comprising a pentraxin-4 inhibitor as an active ingredient. The drug screened by the above-mentioned method and the pharmaceutical composition are useful for treating obesity-related diseases, particularly for non-alcoholic steatohepatitis (NASH).

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Abstract: Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Abstract: The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Abstract: A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor.

Abstract: The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded.

Abstract: Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Abstract: A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode 120 and a lower electrode 310 facing each other within a processing chamber 102; a lift pin 332 that is protrusible from and retractable below the lower electrode and lifts up a substrate mounted on the lower electrode to be separated from the lower electrode; a lifter 330 that elevates the lift pin up and down; and a controller 400 that elevates the lift pin upward and brings the lift pin into contact with the upper electrode by driving the lifter while the substrate is not mounted on the lower electrode and measures a distance between the electrodes based on a moving distance of the lifter.

Abstract: In a plasma etching method, a plasma of a processing gas containing CxFy (x, y are integers equal to or greater than 1), a rare gas and O2 by applying a high frequency power to the upper or the lower electrode while the processing gas is being supplied into the processing chamber. Further, an oxide film formed on the substrate is etched through a mask layer while applying a high frequency power for bias to the lower electrode. When a certain etching condition is likely to cause a low etching opening characteristic, a DC voltage is applied to the upper electrode, to thereby obtain a fine opening characteristic.

Abstract: An electronic control device enabling heat generated by a power module to be favorably radiated even in a high-temperature condition in an engine compartment. The unit includes a casing accommodating a control circuit substrate; a die-cast mounting plate forming a control circuit substrate support portion, a frame-like fitting member and an external mounting portion integrally together; and a metal substrate on which a power module is adhered. When the mounting plate is mounted on the wall of a transmission and the metal substrate is fitted in the opening in the bottom surface of the frame-like fitting member, a mounting surface in nearly the same plane is formed by the lower surface of the mounting plate and by the lower surface of the metal substrate permitting heat from the power module to be radiated to the wall.

Abstract: The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.

Abstract: An electronic control device enabling heat generated by a power module to be favorably radiated even in a high-temperature condition in an engine compartment. The unit includes a casing accommodating a control circuit substrate; a die-cast mounting plate forming a control circuit substrate support portion, a frame-like fitting member and an external mounting portion integrally together; and a metal substrate on which a power module is adhered. When the mounting plate is mounted on the wall of a transmission and the metal substrate is fitted in the opening in the bottom surface of the frame-like fitting member, a mounting surface in nearly the same plane is formed by the lower surface of the mounting plate and by the lower surface of the metal substrate permitting heat from the power module to be radiated to the wall.

Abstract: The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF3/Ar/N2 mixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply source 46 with the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vessel 10 are whirled by the purging gas to be discharged through an exhaust port 10b and through an exhaust pipe 52. When the purging step is completed, the second step plasma etching is performed with C4F8/Ar/N2 mixed gas.

Abstract: A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.