Patents by Inventor Nobuhisa Nakasima

Nobuhisa Nakasima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with a beveled and chamfered outer peripheral portion
    Patent number: 6020603
    Abstract: A high voltage semiconductor device such as a gate turn-off thyristor, reduces surface field concentration of a main P-N junction part and attains withstand voltage increase.
    Type: Grant
    Filed: May 22, 1998
    Date of Patent: February 1, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Futoshi Tokunoh, Yasuo Tanaka, Tokumitsu Sakamoto, Nobuhisa Nakasima