Abstract: An assessment support program for an automatic braking system is executed by a computer having at least a CPU. The CPU functions as a part that constitutes an assessment unit that makes an assessment of the performance of the automatic braking system on the basis of a significance probability relating to a probability distribution. The probability distribution is obtained by a logistic regression analysis based on a test result. The test result indicates whether or not a vehicle equipped with the automatic braking system collides with an obstacle under actuation of the automatic braking system. An explanatory variable in the logistic regression analysis is a relative speed vi of the vehicle relative to the obstacle before the actuation of the automatic braking system. A response variable in the logistic regression analysis is an occurrence probability of an event in the test result.

Abstract: An assessment support program for an automatic braking system is executed by a computer having at least a CPU. The CPU functions as a part that constitutes an assessment unit that makes an assessment of the performance of the automatic braking system on the basis of a significance probability relating to a probability distribution. The probability distribution is obtained by a logistic regression analysis based on a test result. The test result indicates whether or not a vehicle equipped with the automatic braking system collides with an obstacle under actuation of the automatic braking system. An explanatory variable in the logistic regression analysis is a relative speed vi of the vehicle relative to the obstacle before the actuation of the automatic braking system. A response variable in the logistic regression analysis is an occurrence probability of an event in the test result.

Abstract: InGaAs photodiodes are produced on an epitaxial InP wafer having an InP substrate, epitaxially grown layers and an InGaAs light sensing layer. An insulating protection film of SixNy or SiOx with openings is selectively deposited on the epitaxial wafer. Compound semiconductor undercoats of a compound semiconductor with a narrower band gap than InP are grown on the InP window layers at the openings by utilizing the protection film as a mask. A p-type impurity from a solid source or a gas source is diffused through the undercoats and the epitaxial InP layer into the InGaAs sensing layer. Then, either p-electrodes are formed on the undercoats and the undercoats are etched by utilizing the p-electrodes as a mask, or the undercoats are shaped by selective etching in a form of p-electrodes and the p-electrodes are formed on the undercoats.