Patents by Inventor Nobuhisa Yamashita
Nobuhisa Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230324243Abstract: A pressure sensor includes: a substrate; a cavity provided in the substrate; a cap provided on the substrate and configured to seal the cavity; and a pressure conduit passing through the substrate and held in a hollow inside the cavity, wherein the pressure conduit includes a tubular insulating layer and a piezoelectric material layer, which is provided on an inner surface of the insulating layer and has a hollow portion therein, wherein the pressure conduit has one end closed in an inside of the cavity and the other end opened toward an outside of the substrate, and wherein the pressure sensor detects deformation of the pressure conduit due to a pressure difference between the outside of the substrate and the inside of the cavity as a change in voltage of the piezoelectric material layer.Type: ApplicationFiled: March 31, 2023Publication date: October 12, 2023Applicant: ROHM CO., LTD.Inventors: Martin Wilfried HELLER, Nobuhisa YAMASHITA
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Publication number: 20230166964Abstract: A MEMS sensor includes: a conductive device-side substrate including cavity in thickness direction thereof; a MEMS electrode arranged in the cavity; a support extending in first direction toward the MEMS electrode from peripheral wall of the cavity and connected to and support the MEMS electrode; and an isolator traversing the support in second direction in plan view to isolate the support into a first support on the side of the MEMS electrode and a second support on the side of the device-side substrate to be electrically insulated from each other in the first direction, wherein the isolator includes: a trench recessed in the thickness direction with respect to the device-side substrate; insulating layers formed on inner wall surfaces of the trench; and joining layers formed on the insulating layers and including portions facing each other and at least partially joined to each other in the first direction.Type: ApplicationFiled: November 17, 2022Publication date: June 1, 2023Applicant: ROHM CO., LTD.Inventors: Nobuhisa YAMASHITA, Toma FUJITA, Martin Wilfried HELLER
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Patent number: 8978469Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.Type: GrantFiled: March 31, 2012Date of Patent: March 17, 2015Assignee: Rohm Co., Ltd.Inventors: Masaki Takaoka, Daisuke Kaminishi, Mizuho Okada, Nobuhisa Yamashita
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Patent number: 8723279Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.Type: GrantFiled: July 22, 2008Date of Patent: May 13, 2014Assignee: Rohm Co., Ltd.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Patent number: 8390084Abstract: The MEMS sensor according to the present invention includes a diaphragm.Type: GrantFiled: May 23, 2011Date of Patent: March 5, 2013Assignee: Rohm Co., Ltd.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Publication number: 20120247207Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.Type: ApplicationFiled: March 31, 2012Publication date: October 4, 2012Applicant: ROHM CO., LTD.Inventors: Masaki TAKAOKA, Daisuke KAMINISHI, Mizuho OKADA, Nobuhisa YAMASHITA
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Patent number: 8039911Abstract: The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)?1??(1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.Type: GrantFiled: June 16, 2009Date of Patent: October 18, 2011Assignee: Rohm Co., Ltd.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Publication number: 20110227177Abstract: The MEMS sensor according to the present invention includes a diaphragm.Type: ApplicationFiled: May 23, 2011Publication date: September 22, 2011Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Patent number: 7898044Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.Type: GrantFiled: September 22, 2010Date of Patent: March 1, 2011Assignee: Rohm Co., Ltd.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Publication number: 20110012212Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.Type: ApplicationFiled: September 22, 2010Publication date: January 20, 2011Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Patent number: 7825483Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.Type: GrantFiled: July 22, 2008Date of Patent: November 2, 2010Assignee: Rohm Co., Ltd.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Publication number: 20100193886Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.Type: ApplicationFiled: July 22, 2008Publication date: August 5, 2010Applicant: ROHM CO., LTD.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
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Publication number: 20090309173Abstract: The MEMS sensor according to the present invention includes a diaphragm.Type: ApplicationFiled: June 16, 2009Publication date: December 17, 2009Applicant: ROHM CO., LTD.Inventors: Goro NAKATANI, Mizuho OKADA, Nobuhisa YAMASHITA
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Publication number: 20090047479Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.Type: ApplicationFiled: July 22, 2008Publication date: February 19, 2009Applicant: ROHM CO., LTD.Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita