Abstract: A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member (10) which is installed surrounding a processing space (1) and grounded to the earth and a pair of electrodes (4) installed inside the conductive member (10). A primary coil of an insularing transformer (7) is connected to a high-frequency power supply unit (14) and a secondary coil is connected to the electrodes (4). A switch (13) is connected to the connection line connecting the secondary coil to the electrodes (4). By setting up/cutting off the connection of the line to the earth with use of the switch (13), the region where the plasma is generated in the processing space (1) can be changed.

Abstract: A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.

Abstract: A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.

Abstract: An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: An apparatus for fabricating a semiconductor device includes a reaction or process tube provided with at least one reinforcement member. The reinforcement member is attached to a body portion of the reaction tube and extends in a longitudinal direction of the reaction tube. A heater surrounds the reaction tube and a substrate loaded in the reaction tube is heat-treated by the heater.

Abstract: An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

Abstract: An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

Abstract: An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.