Abstract: It is an object of the present invention to provide a semiconductor device with high performance and reliability, in which peeling off of interconnection layers or conductive layers due to thermal stress developed during packaging of a semiconductor substrate is suppressed, and thus electrical break down is prevented and an efficient method for manufacturing the semiconductor device. The semiconductor device of the present invention is characterized by having a semiconductor substrate, an interconnection layer 12, a first conductive layer 15, an interlayer insulating film 16 and a second conductive layer 17. The method for manufacturing the semiconductor device of the present invention is characterized by containing at least forming an interconnection layer, forming a first conductive layer, forming an interlayer insulating film and forming a second conductive layer so as to be electrically connected to the first conductive layer.

Abstract: A method of forming projection electrodes includes the steps of mounting a resin mask on a base having pad portions on which projection electrodes should be formed, the resin mask having openings used to position the projection electrodes, providing paste on the pad portions of the base via the resin mask, mounting the projection electrodes, positioned by the resin mask, on the pad portions of the base, and carrying out a heat processing step for heating the pad portions and the projection electrodes positioned by the resin mask so that the projection electrodes are joined to the pad portions.