Patents by Inventor Nobuki Ibaraki

Nobuki Ibaraki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Display device substrate and method of manufacturing the same
    Patent number: 6008869
    Abstract: The present invention provides a display device substrate includes a first wiring layer formed on a substrate made of an insulating material, a second wiring layer formed to cross the first wiring layer, and an insulating film interposed between the first and second wiring layers at a cross point portion therebetween, wherein the first wiring layer is constituted by an electrode wiring layer made of a material containing aluminum as a main component and a surface covering layer formed by causing a refractory metal to denature the electrode wiring layer.
    Type: Grant
    Filed: December 13, 1995
    Date of Patent: December 28, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhisa Oana, Nobuki Ibaraki, Masayuki Dohjo, Yoshitaka Kamata
  • Light-shielding film, useable in an LCD, in which fine particles of a metal or semi-metal are dispersed in and throughout an inorganic insulating film
    Patent number: 5686980
    Abstract: A light-shielding film, and a liquid crystal display device including the light-shielding film, and a material suitable for forming the light-shielding film. The light-shielding film includes at least a film prepared from an inorganic insulating material and fine particles of metal and/or semi-metal dispersed in the insulating material film. The liquid crystal display device includes a display pixel electrode array substrate, a counter substrate, and a liquid crystal layer interposed between the two substrates. The light-shielding film is formed on the display pixel electrode array substrate of the liquid crystal display device.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: November 11, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideo Hirayama, Nobuki Ibaraki, Koji Hidaka, Kiyotsugu Mizouchi, Michiya Kobayashi, Takashi Ishigami, Ryo Sakai, Makoto Kikuchi
  • Thin-film transistor element having a structure promoting reduction of light-induced leakage current
    Patent number: 5614731
    Abstract: A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.
    Type: Grant
    Filed: August 11, 1995
    Date of Patent: March 25, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shuichi Uchikoga, Nobuki Ibaraki, Kouji Suzuki, Takuya Shimano, Kaichi Fukuda