Abstract: According to one embodiment, the oxide semiconductor layer contains at least one of indium (In) and tin (Sn). The insulating film is provided between the control electrode and the oxide semiconductor layer, and contains silicon oxide. The metal oxide film is provided between the insulating film and the oxide semiconductor layer, and contacts the insulating film and the oxide semiconductor layer. The metal oxide film contains at least one selected from a group consisting of gallium (Ga), tungsten (W), germanium (Ge), aluminum (Al), molybdenum (Mo), and titanium (Ti).

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor layer, a first electrode, a second electrode, and a control electrode. The oxide semiconductor layer includes tin and tungsten. An average coordination number of oxygen atoms to tin atoms is greater than 3 but less than 4. The first electrode is electrically connected to a first end portion of the oxide semiconductor layer. The second electrode is electrically connected to a second end portion of the oxide semiconductor layer on a side opposite to the first end portion. The control electrode opposes a portion of the oxide semiconductor layer between the first end portion and the second end portion.

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor layer, a first electrode, a second electrode, and a control electrode. The oxide semiconductor layer includes tin and tungsten. An average coordination number of oxygen atoms to tin atoms is greater than 3 but less than 4. The first electrode is electrically connected to a first end portion of the oxide semiconductor layer. The second electrode is electrically connected to a second end portion of the oxide semiconductor layer on a side opposite to the first end portion. The control electrode opposes a portion of the oxide semiconductor layer between the first end portion and the second end portion.

Abstract: According to one embodiment, an oxide semiconductor includes indium (In), gallium (Ga), and silicon (Si). A composition ratio of Si to In (Si/In) in the oxide semiconductor is larger than 0.2, and a composition ratio of Si to Ga (Si/Ga) in the oxide semiconductor is larger than 0.2.

Abstract: According to one embodiment, the oxide semiconductor layer contains at least one of indium (In) and tin (Sn). The insulating film is provided between the control electrode and the oxide semiconductor layer, and contains silicon oxide. The metal oxide film is provided between the insulating film and the oxide semiconductor layer, and contacts the insulating film and the oxide semiconductor layer. The metal oxide film contains at least one selected from a group consisting of gallium (Ga), tungsten (W), germanium (Ge), aluminum (Al), molybdenum (Mo), and titanium (Ti).

Abstract: According to one embodiment, an oxide semiconductor includes indium (In), gallium (Ga), and silicon (Si). A composition ratio of Si to In (Si/In) in the oxide semiconductor is larger than 0.2, and a composition ratio of Si to Ga (Si/Ga) in the oxide semiconductor is larger than 0.2.

Abstract: A thin film transistor includes semiconductor layer, source electrode, and drain electrode. The semiconductor layer includes first to fifth regions. The third region is provided between the first and second regions. The first region is disposed between the fourth and third regions. The second region is disposed between the fifth and third regions. The semiconductor layer includes an oxide. The source electrode is connected to the first region. The drain electrode is connected to the second region. First thickness of the first region along a second direction is thinner than third thickness along the second direction of each of the third to fifth regions. The second direction crosses a first direction and connects the first region and the source electrode. The first direction connects the first and second regions. Second thickness of the second region along the second direction is thinner than the third thickness.

Abstract: A semiconductor device according to an embodiment, includes a gate electrode, a first dielectric film, a first oxide semiconductor film, a second dielectric film, a source electrode, a source wire, a drain electrode, and a drain wire. The source wire is arranged on the second dielectric film, and connected to the source electrode. The drain wire is arranged on the second dielectric film, and connected to the drain electrode. At least one of the source wire and the drain wire includes a fringe portion sticking out above a channel region. A barrier film that suppresses intrusion of hydrogen is arranged being in contact with at least one of an upper surface and a lower surface of the fringe portion. A region where the barrier film is not formed is included above the channel region.

Abstract: According to one embodiment, a solid state imaging device includes a silicon substrate unit, a color filter layer, first, second and third optical layers. The silicon substrate unit includes imaging units provided in a plane parallel to a major surface. The color filter layer is apart from the silicon substrate unit. The color filter has a lower refractive index than the silicon substrate unit. The first optical layer has a lower first refractive index than the color filter layer and the silicon substrate unit, and is light transmissive. The second optical layer has a second refractive index higher than the first refractive index and lower than the refractive index of the silicon substrate unit, is light transmissive. The third optical layer has a third refractive index lower than the refractive index of the color filter layer and lower than the second refractive index, and is light transmissive.