Abstract: Provided is a fluorescent lamp electrode, having excellent sputtering resistance and able to retain excellent dark-start characteristics over a long period of time when used as an electrode in a cold cathode fluorescent lamp, and which can be produced inexpensively. A fluorescent lamp of this invention has a prolonged life resulting from the use of said electrode. Said electrode is made by dispersing in a nickel or nickel alloy base one or more rare earth metals selected from among lanthanum, cerium, yttrium, samarium, praseodymium, niobium, europium and gadolinium in the form of a precipitated boride phase.

Abstract: Provided is a fluorescent lamp electrode, having excellent sputtering resistance and able to retain excellent dark-start characteristics over a long period of time when used as an electrode in a cold cathode fluorescent lamp, and which can be produced inexpensively. A fluorescent lamp of this invention has a prolonged life resulting from the use of said electrode. Said electrode is made by dispersing in a nickel or nickel alloy base one or more rare earth metals selected from among lanthanum, cerium, yttrium, samarium, praseodymium, niobium, europium and gadolinium in the form of a precipitated boride phase.

Abstract: In conventional Sn/Sb type brazing filler metals, there are disadvantages that large grains in a ?? phase are likely to deposit and that cracks are likely to occur in the elements and the bonded portion, and that voids are formed when the above described special coating is provided on the die bonding plane of the semiconductor element. The brazing filler metal of the present invention comprises 5 to 20 weight % of Sb and 0.01 to 5 weight % of Te, with the balance being Sn and incidental impurities, or a brazing filler metal comprises 5 to 20 weight % of Sb, 0.01 to 5 weight % of Te, 0.001 to 0.5 weight % of P, with the balance being Sn and incidental impurities.

Abstract: In conventional Sn/Sb type brazing filler metals, there are disadvantages that large grains in a ?? phase are likely to deposit and that cracks are likely to occur in the elements and the bonded portion, and that voids are formed when the above described special coating is provided on the die bonding plane of the semiconductor element. The brazing filler metal of the present invention comprises 5 to 20 weight % of Sb and 0.01 to 5 weight % of Te, with the balance being Sn and incidental impurities, or a brazing filler metal comprises 5 to 20 weight % of Sb, 0.01 to 5 weight % of Te, 0.001 to 0.5 weight % of P, with the balance being Sn and incidental impurities.