Abstract: An object of the present invention is to provide a magneto-optical material capable of exhibiting the Faraday effect even though no magnetic field is applied. The magneto-optical material of the present invention has a nanogranular structure in which magnetic nanoparticles are dispersed in a fluoride matrix, and can exhibit Faraday properties without requiring the application of a magnetic field because the magnetic nanoparticles are configured by a magnetic material that has residual magnetization and consists of any of a Fe—Pt alloy, a Co—Pt alloy, a Fe—Co—Ni—Al alloy, a Co ferrite, or a Ba ferrite.

Abstract: Provided are a magneto-optical material capable of enhancing the tunable range of magneto-optical properties such as the Faraday rotation angle, and a method for producing the same. The temperature of a substrate 20 is controlled to a first temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to 1.0×10?4 [Pa] or less (first step). Using a composite target or plurality of individual targets of a TCO material exhibiting ENZ properties in the infrared wavelength region, together with a magnetic metal, a magneto-optical material 10 is deposited on the substrate 20 while the temperature of the substrate 20 is controlled to a second temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to the range of 0.1 to 10 [Pa] (second step).

Abstract: An object of the present invention is to provide a magneto-optical material capable of exhibiting the Faraday effect even though no magnetic field is applied. The magneto-optical material of the present invention has a nanogranular structure in which magnetic nanoparticles are dispersed in a fluoride matrix, and can exhibit Faraday properties without requiring the application of a magnetic field because the magnetic nanoparticles are configured by a magnetic material that has residual magnetization and consists of any of a Fe—Pt alloy, a Co—Pt alloy, a Fe—Co—Ni—Al alloy, a Co ferrite, or a Ba ferrite.

Abstract: Provided are a magneto-optical material capable of enhancing the tunable range of magneto-optical properties such as the Faraday rotation angle, and a method for producing the same. The temperature of a substrate 20 is controlled to a first temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to 1.0×10?4 [Pa] or less (first step). Using a composite target or plurality of individual targets of a TCO material exhibiting ENZ properties in the infrared wavelength region, together with a magnetic metal, a magneto-optical material 10 is deposited on the substrate 20 while the temperature of the substrate 20 is controlled to a second temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to the range of 0.1 to 10 [Pa] (second step).

Abstract: An object of the present invention is to provide a new nanogranular structure material having magneto-optical properties different from those of existing nanogranular structure materials, and a method for producing the same. The nanogranular structure material has a composition represented by L-M-F—O wherein L is at least one element selected from the group consisting of Fe, Co, and Ni, and M is at least one element selected from the group consisting of Li, Be, Mg, Al, Si, Ca, Sr, Ba, Bi, and rare earth elements, F is fluorine, and O is oxygen. The nanogranular structure material according to the present invention is composed of a matrix formed of a fluorine compound having a composition represented by M-F and metal oxide nanoparticles dispersed in the matrix and having a composition represented by L-O.

Abstract: In a magnetic coupler device comprising: a magnetic field generation circuit generating a magnetic field according to an input current; and a detection bridge circuit including a pair of magnetoresistance effect devices, a resistance value of each of the magnetoresistance effect devices changing by applying a magnetic field generated by said magnetic field generation circuit to each of the magnetoresistance effect devices, and having two outputs between which a voltage difference is generated according to an intensity of the magnetic field generated by said magnetic field generation circuit, by forming a geometric shape of each of said magnetic field generation circuit and said detection bridge circuit in line symmetric or point symmetric, a high S/N ratio is obtained even with high frequency.

Abstract: In a magnetic coupler device comprising: a magnetic field generation circuit generating a magnetic field according to an input current; and a detection bridge circuit including a pair of magnetoresistance effect devices, a resistance value of each of the magnetoresistance effect devices changing by applying a magnetic field generated by said magnetic field generation circuit to each of the magnetoresistance effect devices, and having two outputs between which a voltage difference is generated according to an intensity of the magnetic field generated by said magnetic field generation circuit, by forming a geometric shape of each of said magnetic field generation circuit and said detection bridge circuit in line symmetric or point symmetric, a high S/N ratio is obtained even with high frequency.

Abstract: A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection and

Abstract: A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.

Abstract: A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection and

Abstract: The magnetic north detecting device comprises: a 3-dimensional geomagnetism sensor unit including three geomagnetism sensors for detecting respective components of a geomagnetism magnetic field intensity in respective directions of three coordinate axes perpendicular to each other; and a 3-dimensional operation functional section for carrying out an operation on the basis of the components of the geomagnetism magnetic field intensity detected by the geomagnetism sensors, and calculating a magnetic north direction of the geomagnetism, and the 3-dimensional operation functional section carries out the operation and calculates the magnetic north direction of the geomagnetism, based on two assumptions that: (i) at least one axis of three coordinate axes of the 3-dimensional geomagnetism sensor unit is level to the earth surface; and (ii) an angle of a geomagnetism magnetic field vector which is calculated from the detected components of the geomagnetism magnetic field intensity, referring to the earth surface, co

Abstract: The magnetic north detecting device comprises: a 3-dimensional geomagnetism sensor unit including three geomagnetism sensors for detecting respective components of a geomagnetism magnetic field intensity in respective directions of three coordinate axes perpendicular to each other; and a 3-dimensional operation functional section for carrying out an operation on the basis of the components of the geomagnetism magnetic field intensity detected by the geomagnetism sensors, and calculating a magnetic north direction of the geomagnetism, and the 3-dimensional operation functional section carries out the operation and calculates the magnetic north direction of the geomagnetism, based on two assumptions that: (i) at least one axis of three coordinate axes of the 3-dimensional geomagnetism sensor unit is level to the earth surface; and (ii) an angle of a geomagnetism magnetic field vector which is calculated from the detected components of the geomagnetism magnetic field intensity, referring to the earth surface, co

Abstract: A thin film magnetic sensor comprises a pair of first thin film yoke and second thin film yoke each formed of a soft magnetic material, the first and second thin film yokes being positioned to face each other with a gap interposed therebetween; a GMR film having an electrical resistivity higher than that of the soft magnetic material and formed in the gap so as to be electrically connected to the first thin film yoke and the second thin film yoke; and an insulating substrate made of an insulating nonmagnetic material and serving to support the first thin film yoke, the second thin film yoke and the GMR film. The GMR film is formed on a facing surface of the first thin film yoke positioned to face the second thin film yoke, and the length of the gap is defined by the thickness of the GMR film positioned on the facing surface of the first thin film yoke.

Abstract: A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.

Abstract: A thin-film magnetic field sensor is provided which includes two arms of a bridge circuit formed of a first element having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and a second element having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the second element has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the first element due to causes other than the magnetic field. Since the output of the bridge circuit is in proportion to the difference in electrical resistance values between the first and second elements, part of a change due to causes other than the magnetic field is canceled in the output of the bridge circuit, whereby the magnetic field value can be accurately measured.

Abstract: There is provided a thin-film magnetic field sensor, which has a simple structure and a high detecting sensitivity, and reduces measurement errors due to temperature variation or the like. In the thin-film magnetic field sensor according to the present invention, two arms of a bridge circuit are formed of an element 5 having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and an element 10 having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the element 10 has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the element 5 due to causes other than the magnetic field.