Patents by Inventor Nobukiyo Kobayashi

Nobukiyo Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240069124
    Abstract: An object of the present invention is to provide a magneto-optical material capable of exhibiting the Faraday effect even though no magnetic field is applied. The magneto-optical material of the present invention has a nanogranular structure in which magnetic nanoparticles are dispersed in a fluoride matrix, and can exhibit Faraday properties without requiring the application of a magnetic field because the magnetic nanoparticles are configured by a magnetic material that has residual magnetization and consists of any of a Fe—Pt alloy, a Co—Pt alloy, a Fe—Co—Ni—Al alloy, a Co ferrite, or a Ba ferrite.
    Type: Application
    Filed: July 7, 2022
    Publication date: February 29, 2024
    Inventors: Nobukiyo KOBAYASHI, Tadayoshi IWASA, Kenji IKEDA, KenIchi ARAI
  • Publication number: 20230273465
    Abstract: Provided are a magneto-optical material capable of enhancing the tunable range of magneto-optical properties such as the Faraday rotation angle, and a method for producing the same. The temperature of a substrate 20 is controlled to a first temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to 1.0×10?4 [Pa] or less (first step). Using a composite target or plurality of individual targets of a TCO material exhibiting ENZ properties in the infrared wavelength region, together with a magnetic metal, a magneto-optical material 10 is deposited on the substrate 20 while the temperature of the substrate 20 is controlled to a second temperature within the range of 300 to 800 [° C.], and the atmospheric pressure of the substrate 20 is controlled to the range of 0.1 to 10 [Pa] (second step).
    Type: Application
    Filed: January 12, 2022
    Publication date: August 31, 2023
    Inventors: Satoshi IWAMOTO, Yasutomo OTA, Kenji IKEDA, Nobukiyo KOBAYASHI
  • Publication number: 20230230733
    Abstract: An object of the present invention is to provide a new nanogranular structure material having magneto-optical properties different from those of existing nanogranular structure materials, and a method for producing the same. The nanogranular structure material has a composition represented by L-M-F—O wherein L is at least one element selected from the group consisting of Fe, Co, and Ni, and M is at least one element selected from the group consisting of Li, Be, Mg, Al, Si, Ca, Sr, Ba, Bi, and rare earth elements, F is fluorine, and O is oxygen. The nanogranular structure material according to the present invention is composed of a matrix formed of a fluorine compound having a composition represented by M-F and metal oxide nanoparticles dispersed in the matrix and having a composition represented by L-O.
    Type: Application
    Filed: March 1, 2022
    Publication date: July 20, 2023
    Inventors: Nobukiyo KOBAYASHI, Tadayoshi IWASA, Kenji IKEDA, KenIchi ARAI
  • Patent number: 8400748
    Abstract: In a magnetic coupler device comprising: a magnetic field generation circuit generating a magnetic field according to an input current; and a detection bridge circuit including a pair of magnetoresistance effect devices, a resistance value of each of the magnetoresistance effect devices changing by applying a magnetic field generated by said magnetic field generation circuit to each of the magnetoresistance effect devices, and having two outputs between which a voltage difference is generated according to an intensity of the magnetic field generated by said magnetic field generation circuit, by forming a geometric shape of each of said magnetic field generation circuit and said detection bridge circuit in line symmetric or point symmetric, a high S/N ratio is obtained even with high frequency.
    Type: Grant
    Filed: January 31, 2008
    Date of Patent: March 19, 2013
    Assignees: OMRON Corporation, The Research Institute for Electric and Magnetic Materials
    Inventors: Masaaki Yamamoto, Yuichi Kariya, Katsuhisa Toshima, Nobukiyo Kobayashi, Takeshi Yano
  • Publication number: 20100134944
    Abstract: In a magnetic coupler device comprising: a magnetic field generation circuit generating a magnetic field according to an input current; and a detection bridge circuit including a pair of magnetoresistance effect devices, a resistance value of each of the magnetoresistance effect devices changing by applying a magnetic field generated by said magnetic field generation circuit to each of the magnetoresistance effect devices, and having two outputs between which a voltage difference is generated according to an intensity of the magnetic field generated by said magnetic field generation circuit, by forming a geometric shape of each of said magnetic field generation circuit and said detection bridge circuit in line symmetric or point symmetric, a high S/N ratio is obtained even with high frequency.
    Type: Application
    Filed: January 31, 2008
    Publication date: June 3, 2010
    Applicants: OMRON CORPORATION, THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS
    Inventors: Masaaki Yamamoto, Yuichi Kariya, Katsuhisa Toshima, Nobukiyo Kobayashi, Takeshi Yano
  • Patent number: 7218103
    Abstract: A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection and
    Type: Grant
    Filed: June 19, 2006
    Date of Patent: May 15, 2007
    Assignees: The Foundation: The Research Institute for Electric and Magnetic Materials, Daido Steel Co., Ltd.
    Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
  • Patent number: 7170287
    Abstract: A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.
    Type: Grant
    Filed: May 24, 2004
    Date of Patent: January 30, 2007
    Assignees: The Foundation : The Research Institute for Electric and Magnetic Materials, Daido Steel Co., Ltd.
    Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
  • Publication number: 20060226835
    Abstract: A method of manufacturing a thin film magnetic sensor comprising: forming a projection on a surface of an insulating substrate formed of an insulating nonmagnetic material by removing an unnecessary portion of the insulating substrate from a surface region thereof or by depositing a thin film formed of an insulating nonmagnetic material on the surface of the insulating substrate; forming a pair of thin film yokes positioned to face each other with the projection interposed therebetween and completely electrically separated from each other, the thin film yokes being formed by depositing a thin film formed of a soft magnetic material on the surface of the insulating substrate having the projection formed thereon, followed by partially removing the thin film formed of the soft magnetic material until at least a tip surface of the projection is exposed to the outside; and depositing a GMR film having an electrical resistivity higher than that of the soft magnetic material on the tip surface of the projection and
    Type: Application
    Filed: June 19, 2006
    Publication date: October 12, 2006
    Applicants: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS, DAIDO STEEL CO., LTD.
    Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
  • Patent number: 6962001
    Abstract: The magnetic north detecting device comprises: a 3-dimensional geomagnetism sensor unit including three geomagnetism sensors for detecting respective components of a geomagnetism magnetic field intensity in respective directions of three coordinate axes perpendicular to each other; and a 3-dimensional operation functional section for carrying out an operation on the basis of the components of the geomagnetism magnetic field intensity detected by the geomagnetism sensors, and calculating a magnetic north direction of the geomagnetism, and the 3-dimensional operation functional section carries out the operation and calculates the magnetic north direction of the geomagnetism, based on two assumptions that: (i) at least one axis of three coordinate axes of the 3-dimensional geomagnetism sensor unit is level to the earth surface; and (ii) an angle of a geomagnetism magnetic field vector which is calculated from the detected components of the geomagnetism magnetic field intensity, referring to the earth surface, co
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: November 8, 2005
    Assignee: The Research Institute for Electric and Magnetic Materials
    Inventors: Takeshi Yano, Kiwamu Shirakawa, Nobukiyo Kobayashi
  • Publication number: 20050115090
    Abstract: The magnetic north detecting device comprises: a 3-dimensional geomagnetism sensor unit including three geomagnetism sensors for detecting respective components of a geomagnetism magnetic field intensity in respective directions of three coordinate axes perpendicular to each other; and a 3-dimensional operation functional section for carrying out an operation on the basis of the components of the geomagnetism magnetic field intensity detected by the geomagnetism sensors, and calculating a magnetic north direction of the geomagnetism, and the 3-dimensional operation functional section carries out the operation and calculates the magnetic north direction of the geomagnetism, based on two assumptions that: (i) at least one axis of three coordinate axes of the 3-dimensional geomagnetism sensor unit is level to the earth surface; and (ii) an angle of a geomagnetism magnetic field vector which is calculated from the detected components of the geomagnetism magnetic field intensity, referring to the earth surface, co
    Type: Application
    Filed: November 4, 2004
    Publication date: June 2, 2005
    Applicant: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS
    Inventors: Takeshi Yano, Kiwamu Shirakawa, Nobukiyo Kobayashi
  • Publication number: 20040239321
    Abstract: A thin film magnetic sensor comprises a pair of thin film yokes each formed of a soft magnetic material, the thin film yokes being arranged to face each other with a gap interposed therebetween; a GMR film electrically connected to the pair of the thin film yokes and having an electrical resistivity higher than that of the soft magnetic material; and an insulating substrate supporting the thin film yokes and the GMR film and formed of an insulating nonmagnetic material. A gap column of a multilayer structure including a layer formed of an insulating nonmagnetic material and a layer of the GMR film is arranged within the gap, and the thickness of the GMR film is uniform over the gap length.
    Type: Application
    Filed: May 24, 2004
    Publication date: December 2, 2004
    Applicants: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS, DAIDO STEEL CO., LTD.
    Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
  • Publication number: 20040239320
    Abstract: A thin film magnetic sensor comprises a pair of first thin film yoke and second thin film yoke each formed of a soft magnetic material, the first and second thin film yokes being positioned to face each other with a gap interposed therebetween; a GMR film having an electrical resistivity higher than that of the soft magnetic material and formed in the gap so as to be electrically connected to the first thin film yoke and the second thin film yoke; and an insulating substrate made of an insulating nonmagnetic material and serving to support the first thin film yoke, the second thin film yoke and the GMR film. The GMR film is formed on a facing surface of the first thin film yoke positioned to face the second thin film yoke, and the length of the gap is defined by the thickness of the GMR film positioned on the facing surface of the first thin film yoke.
    Type: Application
    Filed: May 24, 2004
    Publication date: December 2, 2004
    Applicants: THE FOUNDATION: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS, DAIDO STEEL CO., LTD
    Inventors: Nobukiyo Kobayashi, Kiwamu Shirakawa, Yasushi Kaneta
  • Patent number: 6642714
    Abstract: A thin-film magnetic field sensor is provided which includes two arms of a bridge circuit formed of a first element having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and a second element having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the second element has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the first element due to causes other than the magnetic field. Since the output of the bridge circuit is in proportion to the difference in electrical resistance values between the first and second elements, part of a change due to causes other than the magnetic field is canceled in the output of the bridge circuit, whereby the magnetic field value can be accurately measured.
    Type: Grant
    Filed: August 22, 2002
    Date of Patent: November 4, 2003
    Assignee: The Research Institute for Electric and Magnetic Materials
    Inventors: Nobukiyo Kobayashi, Takeshi Yano, Shigehiro Ohnuma, Kiwamu Shirakawa, Tsuyoshi Masumoto
  • Publication number: 20030042902
    Abstract: There is provided a thin-film magnetic field sensor, which has a simple structure and a high detecting sensitivity, and reduces measurement errors due to temperature variation or the like. In the thin-film magnetic field sensor according to the present invention, two arms of a bridge circuit are formed of an element 5 having a giant-magneto-resistant thin-film, and soft magnetic thin-films disposed one on either side thereof, with electrical terminals, and an element 10 having a giant-magneto-resistant thin-film, and conductive films disposed one on either side thereof, with electrical terminals. The electrical resistance value of the element 10 has sensitivity relative to the magnetic field, such that it is substantially zero when the magnetic field is small, but it changes equally to the element 5 due to causes other than the magnetic field.
    Type: Application
    Filed: August 22, 2002
    Publication date: March 6, 2003
    Applicant: THE RESEARCH INSTITUTE FOR ELECTRIC AND MAGNETIC MATERIALS
    Inventors: Nobukiyo Kobayashi, Takeshi Yano, Shigehiro Ohnuma, Kiwamu Shirakawa, Tsuyoshi Masumoto