Abstract: Disclosed are an electroless copper plating solution comprising a copper ion, a copper ion-complexing agent, a reducing agent and a pH-adjusting agent, the plating solution comprising a trialkanolmonoamine or a salt thereof as a complexing agent and accelerator in an amount giving a higher copper deposition speed than the copper deposition speed obtained when the trialkanolmonoamine or salt thereof is present in an amount sufficient to complex the copper ion but not enough to function as the accelerator, and 1.2.times.10.sup.-4 to 1.2.times.10.sup.-3 mole/l of an iron ion compound as a reaction initiator and/or 1.92.times.10.sup.-4 to 1.92.times.10.sup.

Abstract: According to the present invention, the changing rate of the predetermined component concentration is determined, based on the difference between the predetermined component concentration in a chemical treating solution (a plating solution) which is analyzed this time and the predetermined component concentration analyzed last time, both measured by an analytical means, and the difference of each sampling time for analysis of each component concentration by the analytical means (140). Subsequently, the correction amount for the analyzed result of this time based on the changing rate obtained above and the elapsed time from the sampling point of time of the plating solution of this time for analysis of the plating solution by the analytical means to the current point of time (150), and then the analyzed result is corrected based on the resulting correction amount to compute or calculate the current concentration (160).

Abstract: A semiconductor element-mounting printed board, comprising a substrate having a thermal expansion coefficient not higher than 4.5.times.10.sup.-6 /.degree. C., a buffer layer formed on at least one of the surfaces of the substrate and having a Young's modulus not higher than 450 kg/mm.sup.2, a conductor circuit formed on a surface of the buffer layer, the conductor circuit having predetermined patterns, and a semiconductor element bonded to the conductor circuit by soldering.

Abstract: Disclosed are an electroless copper plating solution comprising a copper ion, a copper ion-complexing agent, a reducing agent and a pH-adjusting agent, the plating solution comprising a trialkanolmonoamine or a salt thereof as a complexing agent and accelerator in an amount giving a higher copper deposition speed than the copper deposition speed obtained when the trialkanolmonoamine or salt thereof is present in an amount sufficient to complex the copper ion but not enough to function as the accelerator, and 1.2.times.10.sup.-4 to 1.2.times.10.sup.-3 mole/l of an iron ion compound as a reaction initiator and/or 1.92.times.10.sup.-4 to 1.92.times.10.sup.

Abstract: A practically fast electroless copper plating solution is provided by adding a specific monoamine as an accelerator. The accelerator should be a tertiary monoamine and cannot be a diamine, does not have a complexing ability for copper ion, and does not contain a ketone or carboxyl group or an unsaturated group. Specific examples of such monoamines include triethylamine, tripropylamine, tribenzylamine, N-methylpiperidine, and diethylaminoethanol.

Abstract: By forming a first copper layer on a substrate by using a complexing agent for copper ion, which has a low copper complex stability constant, a uniform second layer can be stably formed by a second complexing agent for a copper ion, which has a high copper complex stability constant, even if the substrate is composed of a material having a low catalytic activity, such as tungsten, or even if the catalytic activity of the substrate is uneven. A similar effect can also be obtained by adding a small amount of a complexing agent for a copper ion, having a low stability constant, to an electroless copper plating bath containing a complexing agent for a copper ion, having a low stability constant. In this case, an effect of preventing stopping of the reaction of the complexing agent of a copper ion, having a high stability constant, is attained.

Abstract: A practically fast electroless copper plating solution is provided by adding a specific monoamine as an accelerator. The accelerator should be a tertiary monoamine and cannot be a diamine, does not have a complexing ability for copper ion, and does not contain a ketone or carboxyl group or an unsaturated group. Specific examples of such monoamines include triethylamine, tripropylamine, tribenzylamine, N-methyl-piperidine, and tris (4-bromophenyl) amine, N-methylmorpholine.

Abstract: In a chemical copper-plating bath comprising a copper sulfate, a complexing agent, a reducing agent, and a pH-adjusting agent, borofluoride is added to enhance the deposition speed of Cu, thus eliminating the problems of a complicated control of the bath.

Abstract: A gypsum moldings as building materials having high strength is obtained by use of fibrous .alpha.-calcium sulfate hemihydrate as a raw material.There are two methods manufacturing the said gypsum moldings. One of them is the wet method and the other is the dry method.The wet method essentially consists of mixing fibrous .alpha.-calcium sulfate hemihydrate suspension with reinforcers et al., papering and dehydrating the resulting mixed suspension, with or without pressing the resulting wet mat, curing and drying the mat to obtain a gypsum moldings as building materials having high strength.The dry method is roughly divided into two methods. One of them comprises adding water to fibrous .alpha.-calcium sulfate hemihydrate and molding the resulting wet hemihydrate, and the other comprises molding fibrous .alpha.-calcium sulfate hemihydrate and adding water to the resulting moldings.